JP2018182290A - Electrostatic chuck - Google Patents
Electrostatic chuck Download PDFInfo
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- JP2018182290A JP2018182290A JP2017242302A JP2017242302A JP2018182290A JP 2018182290 A JP2018182290 A JP 2018182290A JP 2017242302 A JP2017242302 A JP 2017242302A JP 2017242302 A JP2017242302 A JP 2017242302A JP 2018182290 A JP2018182290 A JP 2018182290A
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Abstract
Description
本発明は、ウエハ支持面に溝を有する静電チャックに関する。 The present invention relates to an electrostatic chuck having a groove on a wafer support surface.
ウエハと静電チャックのウエハ支持面との間にガスが滞留し、これがウエハ処理プロセスに悪影響を与えることが知られている。 It is known that gas stagnates between the wafer and the wafer support surface of the electrostatic chuck, which adversely affects the wafer processing process.
この問題に対する対策として、特許文献１で述べられているように、部材間に滞留するガスを外部に排出する為の溝をウエハ支持面に形成することが行われている。 As a countermeasure against this problem, as described in Patent Document 1, it is performed to form a groove on the wafer support surface for discharging the gas staying between the members to the outside.
特許文献１のウエハ支持面に形成される溝は、直線状あるいは螺旋状の溝で、支持面の中央から外縁にわたって放射状に形成されている。 The grooves formed in the wafer support surface of Patent Document 1 are linear or spiral grooves and are formed radially from the center to the outer edge of the support surface.
ガスの排出を考えれば、溝が支持面の広範囲にわたって形成されていることが望まれるが、単純に溝の本数を増やすだけではウエハ支持面でのウエハの支持が不安定となる。 Although it is desirable that the grooves be formed over a wide range of the support surface in consideration of gas discharge, simply increasing the number of grooves makes the support of the wafer on the wafer support surface unstable.
本発明では、ウエハ支持面の広範囲にわたって溝を形成しつつ、ウエハを安定して支持することのできる静電チャックを提供する。 The present invention provides an electrostatic chuck capable of stably supporting a wafer while forming a groove over a wide area of the wafer support surface.
本発明の静電チャックは、
ウエハ支持面を有する静電チャックで、前記ウエハ支持面に複数の溝が形成されていて、 前記溝同士が互いに連通している。
The electrostatic chuck of the present invention is
In the electrostatic chuck having a wafer support surface, a plurality of grooves are formed in the wafer support surface, and the grooves communicate with each other.
ウエハ支持面に複数の溝が形成され、かつ、それらが互いに連通しているので、独立して溝を形成する構成に比べて、少ない本数で支持面の広範囲にわたってガスを効率的に排出することが可能となる。また、溝の本数が少ないので、ウエハ下面を支持する面積が広く、ウエハを安定して支持することができる。 Since the plurality of grooves are formed in the wafer support surface and they are in communication with each other, the gas can be efficiently discharged over a wide range of the support surface with a smaller number compared to the configuration in which the grooves are independently formed Is possible. Further, since the number of grooves is small, the area for supporting the lower surface of the wafer is wide, and the wafer can be stably supported.
図１に基づいて、本発明に係る静電チャックＥの構成を説明する。 The configuration of the electrostatic chuck E according to the present invention will be described based on FIG.
図１は上方から静電チャックＥをみたときの平面図である。円形のウエハ支持面Ｓには、図示されないウエハが支持される。このウエハ支持面Ｓには、特許文献１と同様にウエハと支持面の間に滞留するガスを排出するための溝が形成されている。 FIG. 1 is a plan view of the electrostatic chuck E as viewed from above. A wafer (not shown) is supported on the circular wafer support surface S. Similar to Patent Document 1, a groove is formed in the wafer support surface S for discharging the gas remaining between the wafer and the support surface.
ウエハ支持面Ｓには、２種類の溝が形成されている。具体的には、ウエハ支持面Ｓの径方向に形成された溝Ｇ１とウエハ支持面Ｓの周方向に形成された溝Ｇ２である。これらの溝は互いに連通していて、径方向の溝Ｇ１を通して部材間に滞留するガスを外部に排出するように構成されている。 The wafer support surface S is formed with two types of grooves. Specifically, the groove G1 formed in the radial direction of the wafer support surface S and the groove G2 formed in the circumferential direction of the wafer support surface S. The grooves communicate with each other and are configured to discharge the gas remaining between the members to the outside through the radial grooves G1.
ガスの排出を考えれば、溝がウエハ支持面Ｓの広域にわたって形成されていることが望まれる。特許文献１のようにウエハ支持面の径方向のみに溝を形成する場合、ウエハ支持面の広域にわたって溝を形成しようとすると、数多くの溝を形成することが必要となる。
しかしながら、溝の本数を増やすことでウエハ下面を支持する面積が減り、ウエハの支持が不安定になるので、ウエハを安定支持するために溝の本数は少なくしたいという要望がある。
In consideration of gas discharge, it is desirable that the groove be formed over a wide area of the wafer support surface S. In the case where the grooves are formed only in the radial direction of the wafer support surface as in Patent Document 1, in order to form the grooves over the wide area of the wafer support surface, it is necessary to form many grooves.
However, by increasing the number of grooves, the area for supporting the lower surface of the wafer decreases, and the support of the wafer becomes unstable. Therefore, there is a demand to reduce the number of grooves in order to stably support the wafer.
これらの点を考慮して、図１のように径方向の溝Ｇ１に加えて周方向の溝Ｇ２を形成しておけば、少ない本数で、ウエハ支持面の全域にわたり容易に溝を形成することが可能となり、ウエハ支持の安定性が損なわれない。 If the circumferential grooves G2 are formed in addition to the radial grooves G1 as shown in FIG. 1 in consideration of these points, the grooves can be easily formed over the entire area of the wafer support surface with a small number. And the stability of the wafer support is not compromised.
本発明で言う周方向の溝Ｇ２は、図２に図示されるものであってもよい。
図２には、径方向の溝Ｇ１で区切られるウエハ支持面Ｓの各領域に形成された周方向の溝Ｇ２が周方向で非連続に形成されている。このような非連続な溝であっても図１に示した構成と同等の効果を奏することが可能となる。
ただし、溝加工を簡便に行うという点では、図１のように周方向の溝Ｇ２は、ウエハ支持面Ｓの中心を囲む閉じた溝にしておく方がよい。
The circumferential groove G2 referred to in the present invention may be one illustrated in FIG.
In FIG. 2, circumferential grooves G2 formed in respective areas of the wafer support surface S divided by the radial grooves G1 are discontinuously formed in the circumferential direction. Even with such a discontinuous groove, it is possible to obtain the same effect as the configuration shown in FIG.
However, from the viewpoint of simply performing the groove processing, it is better to set the circumferential groove G2 as a closed groove surrounding the center of the wafer support surface S as shown in FIG.
図１では、周方向の溝Ｇ２の数は１つであったが、図３のように複数設けられていてもよい。ただし、周方向の溝Ｇ２の数を増やした場合、破線円で描かれる多数の交点が発生する。 In FIG. 1, the number of grooves G2 in the circumferential direction is one, but a plurality of grooves may be provided as shown in FIG. 3. However, when the number of grooves G2 in the circumferential direction is increased, a large number of intersections drawn by a broken line circle occur.
この交点では、溝加工上、交点に形成される角部分が丸みをおびてしまうので、他の場所に比べて溝幅が広くなる。溝幅が広がれば、溝上方でウエハを支持できない場所が広がるので、幅広の溝に対向したウエハの場所には大きな撓みが生じる。
このことから、溝同士の交点の数を少なくすることが望まれる。
なお、ここで述べた交点とは、溝同士が単に連通している三叉路の交差点のことではない。溝同士が交差して四叉路以上が形成されたときの交差点のことを意味している。
At this point of intersection, the corner portion formed at the point of intersection is rounded due to groove processing, so the groove width becomes wider than at other places. If the groove width is increased, a place where the wafer can not be supported is expanded above the groove, so that a large deflection occurs in the position of the wafer facing the wide groove.
From this, it is desirable to reduce the number of intersections between the grooves.
In addition, the intersection mentioned here does not refer to the intersection of the three-forks that the grooves merely communicate with each other. It means an intersection when the grooves cross each other to form a fork or more.
交点の数を減らし、溝幅の広がりを抑えて、ウエハの支持を安定させるには、図４に描かれているように、溝同士が互いに連通した場所には、三叉路が形成されるようにしておく。 In order to reduce the number of intersections, to suppress the spread of the groove width, and to stabilize the wafer support, as illustrated in FIG. 4, a three-fork is formed where the grooves communicate with each other, as shown in FIG. Keep it.
図５に図示されるように、ウエハ支持面Ｓは、溝Ｇ１、Ｇ２以外に凹部Ｈが形成されている場合がある。この凹部Ｈは、例えば、ウエハ支持面Ｓを有する部材を、同部材の下方に設けられたベース部材（不図示）に固定するための固定具（ボルト）が挿通される孔である。 As illustrated in FIG. 5, the wafer supporting surface S may have a recess H in addition to the grooves G1 and G2. The recess H is, for example, a hole through which a fixing tool (bolt) for fixing a member having the wafer support surface S to a base member (not shown) provided below the member is inserted.
この凹部Ｈが形成されていれば、ここにガスが滞留することが懸念される。よって、図５に図示されているように、このような凹部Ｈに対して、周方向の溝Ｇ２を連通させておけば、凹部Ｈでのガスの滞留を防ぐことができる。
なお、図５の構成では、周方向の溝Ｇ２が凹部Ｈと連通しているが、径方向の溝Ｇ１がこの凹部Ｈと連通していてもよい。
If this recess H is formed, there is a concern that the gas will stay here. Therefore, as shown in FIG. 5, if the groove G2 in the circumferential direction is communicated with such a recess H, gas stagnation in the recess H can be prevented.
In the configuration of FIG. 5, the circumferential groove G2 communicates with the recess H, but the radial groove G1 may communicate with the recess H.
ウエハとウエハ支持面間に滞留するガスの発生要因としては、特許文献１ではウエハに付着した水やウエハに吸着されたガスが挙げられるが、これ以外に、特許文献２で述べられているような静電チャックＥに支持されるウエハ面に付けられた保護膜も要因となりうる。 Although the water adhering to the wafer and the gas adsorbed to the wafer can be mentioned as a factor of generating the gas staying between the wafer and the wafer supporting surface, as described in the patent document 2 other than this. A protective film attached to the wafer surface supported by the electrostatic chuck E can also be a factor.
また、特許文献１には、静電チャックＥに設けられたヒータによって、ウエハが昇温されたときにガスが発生することが述べられているが、ヒータ以外にもウエハが昇温されることもある。例えば、ウエハ処理工程でウエハ面がプラズマに曝されたり、ウエハ面にイオンビームが照射されたりすることでもウエハ温度は上昇する。
よって、本発明の静電チャックは特許文献１のように必ずしもヒータを備えている必要はない。
In addition, Patent Document 1 describes that gas is generated when the temperature of the wafer is raised by the heater provided to the electrostatic chuck E. However, the temperature of the wafer is raised in addition to the heater. There is also. For example, the wafer temperature is also increased by exposing the wafer surface to plasma or irradiating the wafer surface with an ion beam in a wafer processing process.
Therefore, the electrostatic chuck of the present invention does not necessarily have to have a heater as in Patent Document 1.
図１や図３〜図５には、周方向の溝形状として円形の溝が描かれているが、形状は真円に限らず、楕円であってもよく、５角や６角といった多角形であってもよい。 In FIG. 1 and FIG. 3 to FIG. 5, circular grooves are drawn as groove shapes in the circumferential direction, but the shape is not limited to a perfect circle, and may be an ellipse, and a polygon such as pentagon or hexagon It may be
これまでの実施形態では、支持面を削って溝を形成することが想定されているが、支持面を部分的に被覆し、被覆されていない場所を溝とする構成であってもよい。 In the above embodiments, it is assumed that the support surface is scraped to form a groove, but the support surface may be partially covered and the uncovered location may be a groove.
数あるウエハ処理工程の中で、イオン注入工程では、ウエハ面にイオンビームを所定角度で照射することが要求されており、注入角度の許容範囲は±０．５°程度と非常にシビアなものである。
ウエハの厚みが数十μｍであれば、溝部分でのウエハの撓み量がわずかなものであっても、ウエハ面に対するイオンビームの照射角度が許容される範囲外となってしまう。
Among the many wafer processing steps, the ion implantation step is required to irradiate the wafer surface with an ion beam at a predetermined angle, and the tolerance of the implantation angle is as severe as ± 0.5 ° or so. It is.
If the thickness of the wafer is several tens of μm, the irradiation angle of the ion beam with respect to the wafer surface is out of the allowable range even if the amount of bending of the wafer at the groove portion is slight.
ウエハの撓み量は溝深さではなく、ウエハ下面を支持する溝幅に大きく関係している。
これらの点を加味して、イオン注入工程では実用的な溝幅としては１〜２ｍｍの範囲にすることが望ましい。
The amount of deflection of the wafer is not largely related to the groove depth, but to the groove width supporting the lower surface of the wafer.
In consideration of these points, it is desirable that the practical groove width be in the range of 1 to 2 mm in the ion implantation step.
また、図６（Ａ）のように、挿入孔Ｈに対して横孔Ｔを形成しておいてもよい。この横孔Ｔは、静電チャックＥの面に水平方向に延びて静電チャックＥの外側に連通していて、挿入孔Ｈに滞留したガスを静電チャックＥの外部に排出するために利用される。
この横孔Ｔを形成する場合は、ウエハ支持面Ｓの下方で溝が形成されていない平面に形成する。
１つの挿入孔Ｈに形成される横孔の数は１つに限らず、複数であってもよい。また、挿
入孔Ｈが複数ある場合には、静電チャックＥの外側に連通した横孔Ｔを設けつつ、図６（
Ｂ）のように各挿入孔Ｈをつなぐように横孔Ｔを設けておけば、横孔Ｔの数を減らすこと
ができる。
Further, as shown in FIG. 6A, the lateral holes T may be formed in the insertion holes H. The horizontal hole T extends horizontally in the surface of the electrostatic chuck E and communicates with the outside of the electrostatic chuck E, and is used to discharge the gas retained in the insertion hole H to the outside of the electrostatic chuck E. Be done.
When the lateral holes T are formed, they are formed in a plane in which no groove is formed below the wafer support surface S.
The number of lateral holes formed in one insertion hole H is not limited to one, and may be plural. Further, in the case where there are a plurality of insertion holes H, while providing a horizontal hole T communicated with the outside of the electrostatic chuck E, as shown in FIG.
If horizontal holes T are provided so as to connect the insertion holes H as in B), the number of horizontal holes T can be reduced.
さらに、本発明の溝Ｇは、上述した実施形態で述べた径方向の溝Ｇ１と周方向の溝Ｇ２に限られない。例えば、ウエハ支持面Ｓを概略格子状に区切る溝Ｇを形成しておいてもいい。 Furthermore, the groove G of the present invention is not limited to the radial groove G1 and the circumferential groove G2 described in the above embodiment. For example, grooves G may be formed to divide the wafer support surface S into a substantially grid shape.
その他、本発明は前記実施形態に限られず、その趣旨を逸脱しない範囲で種々の変形が可能であることは言うまでもない。 Besides, it goes without saying that the present invention is not limited to the above embodiment, and various modifications can be made without departing from the scope of the invention.
Ｅ 静電チャック
Ｈ 凹部
Ｇ１ 径方向の溝
Ｇ２ 周方向の溝
Ｓ 支持面
Ｔ 横孔
E Electrostatic chuck H Recess G1 Groove G2 in the radial direction Groove S in the circumferential direction Support surface T Lateral hole
また、図６（Ａ）のように、凹部Ｈに対して横孔Ｔを形成しておいてもよい。この横孔Ｔは、静電チャックＥの面に水平方向に延びて静電チャックＥの外側に連通していて、凹部Ｈに滞留したガスを静電チャックＥの外部に排出するために利用される。
この横孔Ｔを形成する場合は、ウエハ支持面Ｓの下方で溝が形成されていない平面に異形成する。
１つの凹部Ｈに形成される横孔Ｔの数は１つに限らず、複数であってもよい。また、凹部Ｈが複数ある場合には、静電チャックＥの外側に連通した横孔Ｔを設けつつ、図６（Ｂ）のように各凹部Ｈをつなぐように横孔Ｔを設けておけば、横孔Ｔの数を減らすことができる。
Further, as shown in FIG. 6A , the lateral holes T may be formed in the recess H. The horizontal hole T extends horizontally in the surface of the electrostatic chuck E and communicates with the outside of the electrostatic chuck E, and is used to discharge the gas retained in the recess H to the outside of the electrostatic chuck E. Ru.
When the lateral holes T are formed, the grooves are not formed in the plane below the wafer supporting surface S.
The number of lateral holes T formed in one recess H is not limited to one, and may be plural. Further, when there are a plurality of recesses H, if the lateral holes T communicated with the outside of the electrostatic chuck E are provided, the lateral holes T may be provided so as to connect the respective recesses H as shown in FIG. , The number of lateral holes T can be reduced.
Claims (5)
前記支持面に複数の溝が形成されていて、
前記溝同士が互いに連通している静電チャック。 Electrostatic chuck with a wafer support surface,
A plurality of grooves are formed in the support surface,
The electrostatic chuck in which the grooves communicate with each other.
前記凹部と前記溝とが連通している請求項１または２記載の静電チャック。 A recess is formed on the wafer support surface,
The electrostatic chuck according to claim 1, wherein the recess and the groove communicate with each other.
前記ウエハ支持面と平行な方向に、前記凹部と連通した横孔を具備した請求項１乃至３のいずれか１項に記載の静電チャック。 Below the wafer support surface where the groove is formed,
The electrostatic chuck according to any one of claims 1 to 3, further comprising a lateral hole in communication with the recess in a direction parallel to the wafer support surface.
両方向に形成された溝が、互いに連通している請求項１乃至４のいずれか１項に記載の静電チャック。 The wafer support surface is circular, and grooves are formed in the radial and circumferential directions of the wafer support surface,
The electrostatic chuck according to any one of claims 1 to 4, wherein the grooves formed in both directions communicate with each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810035305.4A CN108735647A (en) | 2017-04-18 | 2018-01-15 | Electrostatic chuck |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017082419 | 2017-04-18 | ||
| JP2017082419 | 2017-04-18 |
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| JP2018182290A true JP2018182290A (en) | 2018-11-15 |
| JP2018182290A5 JP2018182290A5 (en) | 2019-05-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017242302A Pending JP2018182290A (en) | 2017-04-18 | 2017-12-19 | Electrostatic chuck |
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| JPH0338357U (en) * | 1989-08-21 | 1991-04-12 | ||
| JPH06349938A (en) * | 1993-06-11 | 1994-12-22 | Tokyo Electron Ltd | Vacuum processing device |
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