TW200744283A - Electrostatic discharge circuit and method for reducing input capacitance of semiconductor chip including same - Google Patents

Electrostatic discharge circuit and method for reducing input capacitance of semiconductor chip including same

Info

Publication number
TW200744283A
TW200744283A TW096101806A TW96101806A TW200744283A TW 200744283 A TW200744283 A TW 200744283A TW 096101806 A TW096101806 A TW 096101806A TW 96101806 A TW96101806 A TW 96101806A TW 200744283 A TW200744283 A TW 200744283A
Authority
TW
Taiwan
Prior art keywords
semiconductor chip
electrostatic discharge
discharge circuit
input capacitance
chip including
Prior art date
Application number
TW096101806A
Other languages
English (en)
Inventor
Myung-Hee Sung
Young-Man Ahn
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200744283A publication Critical patent/TW200744283A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW096101806A 2006-05-22 2007-01-17 Electrostatic discharge circuit and method for reducing input capacitance of semiconductor chip including same TW200744283A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060045614A KR100725103B1 (ko) 2006-05-22 2006-05-22 정전기 방전회로 및 이를 갖는 반도체 칩의 입력커패시턴스 감소 방법

Publications (1)

Publication Number Publication Date
TW200744283A true TW200744283A (en) 2007-12-01

Family

ID=38358368

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096101806A TW200744283A (en) 2006-05-22 2007-01-17 Electrostatic discharge circuit and method for reducing input capacitance of semiconductor chip including same

Country Status (5)

Country Link
US (1) US7764475B2 (zh)
KR (1) KR100725103B1 (zh)
CN (1) CN101079418A (zh)
DE (1) DE102007025775B4 (zh)
TW (1) TW200744283A (zh)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100876894B1 (ko) * 2007-07-03 2009-01-07 주식회사 하이닉스반도체 반도체 장치의 내부 회로 보호 장치
US8749930B2 (en) * 2009-02-09 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Protection circuit, semiconductor device, photoelectric conversion device, and electronic device
WO2013013035A1 (en) * 2011-07-21 2013-01-24 Microchip Technology Incorporated Multi-channel homogenous path for enhanced mutual triggering of electrostatic discharge fingers
US9171834B2 (en) * 2012-11-30 2015-10-27 Freescale Semiconductor, Inc. Over voltage protection for a thin oxide load circuit
US10476263B2 (en) * 2015-12-31 2019-11-12 Novatek Microelectronics Corp. Device and operation method for electrostatic discharge protection
US10734806B2 (en) 2016-07-21 2020-08-04 Analog Devices, Inc. High voltage clamps with transient activation and activation release control
US10134725B2 (en) * 2016-09-26 2018-11-20 Shenzhen GOODIX Technology Co., Ltd. Electrostatic discharge protection circuit applied in integrated circuit
US10861845B2 (en) * 2016-12-06 2020-12-08 Analog Devices, Inc. Active interface resistance modulation switch
DK3343763T3 (da) * 2016-12-29 2020-01-27 Gn Hearing As Udgangsdriver, der omfatter mos-kontakter med justerbar back gate-forspænding
US10756613B2 (en) * 2018-02-01 2020-08-25 Marvell Asia Pte, Ltd. Controlling current flow between nodes with adjustable back-gate voltage
US11387648B2 (en) 2019-01-10 2022-07-12 Analog Devices International Unlimited Company Electrical overstress protection with low leakage current for high voltage tolerant high speed interfaces
KR102161796B1 (ko) * 2020-03-02 2020-10-05 주식회사 아나패스 전기적 스트레스 보호회로 및 이를 포함하는 전자 장치
CN113364445B (zh) * 2020-03-03 2024-06-18 瑞昱半导体股份有限公司 控制芯片及其相关的耐高压输出电路
KR20220128040A (ko) * 2021-03-12 2022-09-20 삼성전자주식회사 반도체 장치
US11689014B2 (en) 2021-06-24 2023-06-27 Qualcomm Incorporated Electrostatic discharge circuit for multi-voltage rail thin-gate output driver
US11575259B2 (en) 2021-07-08 2023-02-07 Qualcomm Incorporated Interface circuit with robust electrostatic discharge
US11699900B2 (en) * 2021-07-30 2023-07-11 Nanya Technology Corporation Semiconductor chip, electronic device and electrostatic discharge protection method for electronic device thereof
JP2023062715A (ja) * 2021-10-22 2023-05-09 株式会社東芝 集積回路
US11955796B2 (en) * 2022-04-29 2024-04-09 Apple Inc. Electrostatic discharge network for driver gate protection

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6057998A (en) * 1996-12-25 2000-05-02 Hitachi, Ltd. Insulated gate type semiconductor apparatus with a control circuit
US6404269B1 (en) * 1999-09-17 2002-06-11 International Business Machines Corporation Low power SOI ESD buffer driver networks having dynamic threshold MOSFETS
JP2001274265A (ja) 2000-03-28 2001-10-05 Mitsubishi Electric Corp 半導体装置
TW486804B (en) * 2001-04-24 2002-05-11 United Microelectronics Corp Double-triggered electrostatic discharge protection circuit
US6747501B2 (en) * 2001-07-13 2004-06-08 Industrial Technology Research Institute Dual-triggered electrostatic discharge protection circuit
TW502428B (en) * 2001-09-03 2002-09-11 Faraday Tech Corp Electrostatic discharge protection circuit for power source terminal with dual trigger voltages
US6639772B2 (en) * 2002-01-07 2003-10-28 Faraday Technology Corp. Electrostatic discharge protection circuit for protecting input and output buffer
US6704180B2 (en) * 2002-04-25 2004-03-09 Medtronic, Inc. Low input capacitance electrostatic discharge protection circuit utilizing feedback
DE60307293T2 (de) * 2002-08-28 2007-10-11 Koninklijke Philips Electronics N.V. Verfahren zur verringerung der stromaufnahme in einer zustandshalteschaltung, zustandshalteschaltung und elektronische einrichtung
KR100557643B1 (ko) * 2003-10-13 2006-03-10 매그나칩 반도체 유한회사 이에스디 보호회로
TWI241010B (en) * 2004-03-12 2005-10-01 Admtek Inc Electrostatic discharge clamping circuit for interface circuit of the mixed voltage source
US7450357B2 (en) * 2005-06-03 2008-11-11 United Microelectronics Corp. Electrostatic discharge protection circuit and semiconductor structure for electrostatic discharge
US7705404B2 (en) * 2006-12-20 2010-04-27 Amazing Microelectronic Corporation Electrostatic discharge protection device and layout thereof

Also Published As

Publication number Publication date
DE102007025775A1 (de) 2007-12-06
US7764475B2 (en) 2010-07-27
US20070267701A1 (en) 2007-11-22
KR100725103B1 (ko) 2007-06-04
CN101079418A (zh) 2007-11-28
DE102007025775B4 (de) 2010-05-06

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