TW200743117A - Data output circuit for semiconductor memory apparatus - Google Patents
Data output circuit for semiconductor memory apparatusInfo
- Publication number
- TW200743117A TW200743117A TW096115488A TW96115488A TW200743117A TW 200743117 A TW200743117 A TW 200743117A TW 096115488 A TW096115488 A TW 096115488A TW 96115488 A TW96115488 A TW 96115488A TW 200743117 A TW200743117 A TW 200743117A
- Authority
- TW
- Taiwan
- Prior art keywords
- data output
- semiconductor memory
- output circuit
- memory apparatus
- control signals
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/1066—Output synchronization
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/1069—I/O lines read out arrangements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/10—Aspects relating to interfaces of memory device to external buses
- G11C2207/108—Wide data ports
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/22—Control and timing of internal memory operations
- G11C2207/2254—Calibration
Landscapes
- Dram (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060040932A KR100776740B1 (ko) | 2006-05-08 | 2006-05-08 | 반도체 메모리의 데이터 출력장치 및 방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200743117A true TW200743117A (en) | 2007-11-16 |
Family
ID=38661032
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096115488A TW200743117A (en) | 2006-05-08 | 2007-05-01 | Data output circuit for semiconductor memory apparatus |
Country Status (5)
Country | Link |
---|---|
US (1) | US20070258293A1 (zh) |
JP (1) | JP2007305288A (zh) |
KR (1) | KR100776740B1 (zh) |
CN (1) | CN101071626A (zh) |
TW (1) | TW200743117A (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100911197B1 (ko) * | 2007-12-27 | 2009-08-06 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 데이터 출력 회로 |
JP2011170516A (ja) | 2010-02-17 | 2011-09-01 | Elpida Memory Inc | メモリコントローラ、半導体記憶装置およびこれらを備えるメモリシステム |
KR20120111281A (ko) * | 2011-03-31 | 2012-10-10 | 에스케이하이닉스 주식회사 | 반도체 장치의 데이터 출력 회로 |
KR20220023570A (ko) | 2020-08-21 | 2022-03-02 | 삼성전자주식회사 | 선택적 레벨 변경을 이용한 멀티 레벨 신호 생성 방법, 이를 이용한 데이터 전송 방법, 이를 수행하는 송신기 및 메모리 시스템 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3979690B2 (ja) * | 1996-12-27 | 2007-09-19 | 富士通株式会社 | 半導体記憶装置システム及び半導体記憶装置 |
JPH11213666A (ja) * | 1998-01-30 | 1999-08-06 | Mitsubishi Electric Corp | 出力回路および同期型半導体記憶装置 |
JP2001084773A (ja) * | 1999-09-16 | 2001-03-30 | Nec Corp | 半導体記憶装置 |
US6351172B1 (en) * | 2000-02-29 | 2002-02-26 | Dmel Inc. | High-speed output driver with an impedance adjustment scheme |
US6889336B2 (en) * | 2001-01-05 | 2005-05-03 | Micron Technology, Inc. | Apparatus for improving output skew for synchronous integrate circuits has delay circuit for generating unique clock signal by applying programmable delay to delayed clock signal |
JP2003007052A (ja) * | 2001-06-20 | 2003-01-10 | Mitsubishi Electric Corp | 半導体記憶装置およびそれを用いたメモリシステム |
WO2003084161A1 (fr) * | 2002-03-29 | 2003-10-09 | Fujitsu Limited | Procede d'attaque, circuit d'attaque, procede d'emission au moyen d'un circuit d'attaque et circuit de commande |
KR100480596B1 (ko) | 2002-04-03 | 2005-04-06 | 삼성전자주식회사 | 업-슬루율 및 다운-슬루율, 업-드라이빙 세기 및다운-드라이빙 세기가 상호 독립적으로 조절되는 출력드라이버 회로 |
KR100486263B1 (ko) * | 2002-09-19 | 2005-05-03 | 삼성전자주식회사 | Sdr/ddr 겸용 반도체 메모리 장치의 데이터 출력 회로 |
KR100510516B1 (ko) * | 2003-01-23 | 2005-08-26 | 삼성전자주식회사 | 이중 데이터율 동기식 반도체 장치의 데이터 스트로브신호 발생 회로 |
JP2005032291A (ja) * | 2003-07-07 | 2005-02-03 | Renesas Technology Corp | 半導体記憶装置 |
KR100499417B1 (ko) * | 2003-07-15 | 2005-07-05 | 주식회사 하이닉스반도체 | 디디알 에스디램에서의 링잉 현상 방지 방법 및 그 장치 |
KR100550796B1 (ko) * | 2003-12-11 | 2006-02-08 | 주식회사 하이닉스반도체 | 반도체 메모리 소자의 데이터 전송 장치 및 그 제어 방법 |
KR100554845B1 (ko) * | 2003-12-15 | 2006-03-03 | 주식회사 하이닉스반도체 | 반도체 메모리 소자의 dqs 신호 생성 회로 및 그 생성 방법 |
DE102004021694B4 (de) * | 2004-04-30 | 2010-03-11 | Qimonda Ag | Verfahren und Schaltungsanordnung zum Steuern eines Schreibzugriffs auf einen Halbleiterspeicher |
KR100559737B1 (ko) * | 2005-03-14 | 2006-03-10 | 삼성전자주식회사 | 반도체 장치, 반도체 메모리 장치 및 반도체 장치의 데이터스트로브 제어 방법 |
-
2006
- 2006-05-08 KR KR1020060040932A patent/KR100776740B1/ko not_active IP Right Cessation
- 2006-12-29 US US11/647,478 patent/US20070258293A1/en not_active Abandoned
-
2007
- 2007-04-30 CN CNA2007101071432A patent/CN101071626A/zh active Pending
- 2007-05-01 TW TW096115488A patent/TW200743117A/zh unknown
- 2007-05-02 JP JP2007121839A patent/JP2007305288A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR100776740B1 (ko) | 2007-11-19 |
US20070258293A1 (en) | 2007-11-08 |
KR20070108639A (ko) | 2007-11-13 |
JP2007305288A (ja) | 2007-11-22 |
CN101071626A (zh) | 2007-11-14 |
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