TW200741840A - Wafer having an asymmetric edge profile and method of making the same - Google Patents
Wafer having an asymmetric edge profile and method of making the sameInfo
- Publication number
- TW200741840A TW200741840A TW095114099A TW95114099A TW200741840A TW 200741840 A TW200741840 A TW 200741840A TW 095114099 A TW095114099 A TW 095114099A TW 95114099 A TW95114099 A TW 95114099A TW 200741840 A TW200741840 A TW 200741840A
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- edge profile
- main surface
- making
- same
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
- Y10T428/219—Edge structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW095114099A TWI314758B (en) | 2006-04-20 | 2006-04-20 | Wafer having an asymmetric edge profile and method of making the same |
US11/456,090 US20070248786A1 (en) | 2006-04-20 | 2006-07-07 | Wafer having an asymmetric edge profile and method of making the same |
US12/212,653 US20090023364A1 (en) | 2006-04-20 | 2008-09-18 | Method of making a wafer having an asymmetric edge profile |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW095114099A TWI314758B (en) | 2006-04-20 | 2006-04-20 | Wafer having an asymmetric edge profile and method of making the same |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200741840A true TW200741840A (en) | 2007-11-01 |
TWI314758B TWI314758B (en) | 2009-09-11 |
Family
ID=38619804
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095114099A TWI314758B (en) | 2006-04-20 | 2006-04-20 | Wafer having an asymmetric edge profile and method of making the same |
Country Status (2)
Country | Link |
---|---|
US (2) | US20070248786A1 (zh) |
TW (1) | TWI314758B (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8710665B2 (en) * | 2008-10-06 | 2014-04-29 | Infineon Technologies Ag | Electronic component, a semiconductor wafer and a method for producing an electronic component |
US20110129648A1 (en) * | 2009-11-30 | 2011-06-02 | Yabei Gu | Glass sheet article with double-tapered asymmetric edge |
TWI669789B (zh) * | 2016-04-25 | 2019-08-21 | 矽品精密工業股份有限公司 | 電子封裝件 |
TWI610403B (zh) * | 2017-03-03 | 2018-01-01 | 矽品精密工業股份有限公司 | 基板結構及其製法與電子封裝件 |
JP2020145272A (ja) * | 2019-03-05 | 2020-09-10 | トヨタ自動車株式会社 | 半導体ウエハ |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0624199B2 (ja) * | 1982-07-30 | 1994-03-30 | 株式会社日立製作所 | ウエハの加工方法 |
JPS6088535U (ja) * | 1983-11-24 | 1985-06-18 | 住友電気工業株式会社 | 半導体ウエハ |
JPH0624179B2 (ja) * | 1989-04-17 | 1994-03-30 | 信越半導体株式会社 | 半導体シリコンウェーハおよびその製造方法 |
JPH0624200B2 (ja) * | 1989-04-28 | 1994-03-30 | 信越半導体株式会社 | 半導体デバイス用基板の加工方法 |
US5021882A (en) * | 1989-05-24 | 1991-06-04 | Massachusetts Institute Of Technology | Definition television systems |
DE19632809C2 (de) * | 1996-08-14 | 2002-06-20 | Infineon Technologies Ag | Gerät zum chemisch-mechanischen Polieren von Wafern |
AT411304B (de) * | 1997-06-18 | 2003-11-25 | Sez Ag | Träger für scheibenförmige gegenstände, insbesondere silizium-wafer |
US7258931B2 (en) * | 2002-08-29 | 2007-08-21 | Samsung Electronics Co., Ltd. | Semiconductor wafers having asymmetric edge profiles that facilitate high yield processing by inhibiting particulate contamination |
-
2006
- 2006-04-20 TW TW095114099A patent/TWI314758B/zh not_active IP Right Cessation
- 2006-07-07 US US11/456,090 patent/US20070248786A1/en not_active Abandoned
-
2008
- 2008-09-18 US US12/212,653 patent/US20090023364A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20090023364A1 (en) | 2009-01-22 |
TWI314758B (en) | 2009-09-11 |
US20070248786A1 (en) | 2007-10-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2010077491A3 (en) | Dish-shaped abrasive particles with a recessed surface | |
WO2008089043A3 (en) | Multi-junction solar cells and methods and apparatuses for forming the same | |
SG10201810390TA (en) | Thermal processing susceptor | |
MY169997A (en) | Electronic grade glass substrate and making method | |
EP3483639A3 (en) | Window for display device, method for fabricating the same and display device including the same | |
WO2011062791A3 (en) | Texturing surface of light-absorbing substrate | |
WO2011130397A3 (en) | Improved silicon nitride films and methods | |
MX2013013245A (es) | Adhesivos secos. | |
MX339321B (es) | Miembros absorbentes que tienen un perfil de densidad. | |
WO2010053519A3 (en) | Alignment for edge field nano-imprinting | |
SG165291A1 (en) | Substrate for a magnetic disk and method of manufacturing the same | |
WO2009082458A3 (en) | Contact angle attenuations on multiple surfaces | |
EP2238610A4 (en) | METHOD OF ACIDIFYING AN ASYMMETRIC WAFER, SOLAR CELL WITH ASYMMETRICALLY APPLIED WAFER, AND METHOD FOR THE PRODUCTION THEREOF | |
WO2009155502A3 (en) | Computer-implemented methods, computer-readable media, and systems for determining one or more characteristics of a wafer | |
WO2009131363A3 (ko) | 점착 필름 및 이를 사용한 백그라인딩 방법 | |
PH12014501287A1 (en) | Oral care compositions | |
WO2014004540A8 (en) | Method for engineering proteases and protein kinases | |
CA118276S (en) | Yagi antenna | |
WO2013009542A3 (en) | Variable thickness globe | |
EP3666937A4 (en) | HIGH FLATNESS, LOW DAMAGE, LARGE DIAMETER MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING | |
TWD153552S (zh) | 用於半導體晶圓操作之末端受動器之質量阻尼 | |
TW200741840A (en) | Wafer having an asymmetric edge profile and method of making the same | |
EP4012079A4 (en) | SIC SUBSTRATE, SIC EPITALIAL SUBSTRATE, SIC BAR AND METHOD OF PRODUCTION | |
WO2010130464A9 (en) | A method of smoothing and/or bevelling an edge of a substrate | |
WO2011014288A3 (en) | Articles having low coefficients of friction, methods of making the same, and methods of use |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |