TW200739776A - Method and structure for eliminating aluminum terminal pad material in semiconductor devices - Google Patents

Method and structure for eliminating aluminum terminal pad material in semiconductor devices

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Publication number
TW200739776A
TW200739776A TW096111680A TW96111680A TW200739776A TW 200739776 A TW200739776 A TW 200739776A TW 096111680 A TW096111680 A TW 096111680A TW 96111680 A TW96111680 A TW 96111680A TW 200739776 A TW200739776 A TW 200739776A
Authority
TW
Taiwan
Prior art keywords
copper pad
stack
terminal copper
over
terminal
Prior art date
Application number
TW096111680A
Other languages
English (en)
Other versions
TWI438852B (zh
Inventor
Daniel C Edelstein
Mukta G Farooq
Robert Hannon
Ian D Melville
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of TW200739776A publication Critical patent/TW200739776A/zh
Application granted granted Critical
Publication of TWI438852B publication Critical patent/TWI438852B/zh

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    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0495—5th Group
    • H01L2924/04953—TaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0504—14th Group
    • H01L2924/05042—Si3N4
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

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TW096111680A 2006-04-04 2007-04-02 形成遠後端製程(fbeol)半導體元件之方法 TWI438852B (zh)

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7470985B2 (en) * 2006-07-31 2008-12-30 International Business Machines Corporation Solder connector structure and method
US8563336B2 (en) 2008-12-23 2013-10-22 International Business Machines Corporation Method for forming thin film resistor and terminal bond pad simultaneously
US8227918B2 (en) * 2009-09-16 2012-07-24 International Business Machines Corporation Robust FBEOL and UBM structure of C4 interconnects
US8482125B2 (en) 2010-07-16 2013-07-09 Qualcomm Incorporated Conductive sidewall for microbumps
US8580672B2 (en) * 2011-10-25 2013-11-12 Globalfoundries Inc. Methods of forming bump structures that include a protection layer
US9842810B1 (en) 2016-06-08 2017-12-12 Globalfoundries Inc. Tiled-stress-alleviating pad structure
CN107481976B (zh) * 2016-06-08 2019-12-17 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制作方法和电子装置
CN107611036A (zh) * 2016-07-12 2018-01-19 碁鼎科技秦皇岛有限公司 封装基板及其制作方法、封装结构
JP6701149B2 (ja) * 2017-10-25 2020-05-27 キヤノン株式会社 撮像装置およびカメラ
US11388822B2 (en) * 2020-08-28 2022-07-12 Applied Materials, Inc. Methods for improved polymer-copper adhesion

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5583285A (en) * 1994-11-29 1996-12-10 Lucent Technologies Inc. Method for detecting a coating material on a substrate
US6281090B1 (en) * 1996-10-16 2001-08-28 Macdermid, Incorporated Method for the manufacture of printed circuit boards with plated resistors
US6187680B1 (en) * 1998-10-07 2001-02-13 International Business Machines Corporation Method/structure for creating aluminum wirebound pad on copper BEOL
US6730982B2 (en) * 2001-03-30 2004-05-04 Infineon Technologies Ag FBEOL process for Cu metallizations free from Al-wirebond pads
JP2002353307A (ja) * 2001-05-25 2002-12-06 Toshiba Corp 半導体装置
US6489229B1 (en) * 2001-09-07 2002-12-03 Motorola, Inc. Method of forming a semiconductor device having conductive bumps without using gold
US6767819B2 (en) * 2001-09-12 2004-07-27 Dow Corning Corporation Apparatus with compliant electrical terminals, and methods for forming same
JP2003124189A (ja) * 2001-10-10 2003-04-25 Fujitsu Ltd 半導体装置の製造方法
US6583039B2 (en) * 2001-10-15 2003-06-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming a bump on a copper pad
US20030217462A1 (en) * 2001-12-13 2003-11-27 Fei Wang Method for improving electromigration performance of metallization features through multiple depositions of binary alloys
JP3761461B2 (ja) * 2001-12-13 2006-03-29 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US6732908B2 (en) * 2002-01-18 2004-05-11 International Business Machines Corporation High density raised stud microjoining system and methods of fabricating the same
US6661098B2 (en) * 2002-01-18 2003-12-09 International Business Machines Corporation High density area array solder microjoining interconnect structure and fabrication method
JP2003249498A (ja) * 2002-02-25 2003-09-05 Toshiba Corp 半導体装置の製造方法
US6827868B2 (en) * 2002-11-27 2004-12-07 International Business Machines Corporation Thinning of fuse passivation after C4 formation
JP4034197B2 (ja) * 2003-01-31 2008-01-16 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US6905909B2 (en) * 2003-10-22 2005-06-14 Lsi Logic Corporation Ultra low dielectric constant thin film
JP2005203476A (ja) * 2004-01-14 2005-07-28 Oki Electric Ind Co Ltd 半導体装置の配線構造及びその製造方法
US7229911B2 (en) * 2004-04-19 2007-06-12 Applied Materials, Inc. Adhesion improvement for low k dielectrics to conductive materials
JP4327657B2 (ja) * 2004-05-20 2009-09-09 Ｎｅｃエレクトロニクス株式会社 半導体装置

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CN101410965A (zh) 2009-04-15
US7375021B2 (en) 2008-05-20
WO2007115292A3 (en) 2007-12-06
JP5147830B2 (ja) 2013-02-20
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CN101410965B (zh) 2010-11-03
WO2007115292A2 (en) 2007-10-11
JP2009532917A (ja) 2009-09-10

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