TW200737404A - Semiconductor on glass insulator made using improved ion implantation process - Google Patents
Semiconductor on glass insulator made using improved ion implantation processInfo
- Publication number
- TW200737404A TW200737404A TW095147583A TW95147583A TW200737404A TW 200737404 A TW200737404 A TW 200737404A TW 095147583 A TW095147583 A TW 095147583A TW 95147583 A TW95147583 A TW 95147583A TW 200737404 A TW200737404 A TW 200737404A
- Authority
- TW
- Taiwan
- Prior art keywords
- ion implantation
- semiconductor
- implantation process
- glass insulator
- insulator made
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000005468 ion implantation Methods 0.000 title abstract 3
- 239000011521 glass Substances 0.000 title abstract 2
- 239000012212 insulator Substances 0.000 title 1
- 238000002513 implantation Methods 0.000 abstract 2
- 238000004299 exfoliation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Element Separation (AREA)
- Formation Of Insulating Films (AREA)
- Physical Vapour Deposition (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/313,206 US7456080B2 (en) | 2005-12-19 | 2005-12-19 | Semiconductor on glass insulator made using improved ion implantation process |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200737404A true TW200737404A (en) | 2007-10-01 |
Family
ID=37875670
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095147583A TW200737404A (en) | 2005-12-19 | 2006-12-18 | Semiconductor on glass insulator made using improved ion implantation process |
Country Status (5)
Country | Link |
---|---|
US (1) | US7456080B2 (zh) |
EP (1) | EP1798765A3 (zh) |
JP (1) | JP2007184581A (zh) |
KR (1) | KR20070065235A (zh) |
TW (1) | TW200737404A (zh) |
Families Citing this family (32)
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EP2002484A4 (en) * | 2006-04-05 | 2016-06-08 | Silicon Genesis Corp | METHOD AND STRUCTURE FOR MANUFACTURING PHOTOVOLTAIC CELLS USING A LAYER TRANSFER PROCESS |
US7790565B2 (en) * | 2006-04-21 | 2010-09-07 | Corning Incorporated | Semiconductor on glass insulator made using improved thinning process |
FR2912839B1 (fr) * | 2007-02-16 | 2009-05-15 | Soitec Silicon On Insulator | Amelioration de la qualite de l'interface de collage par nettoyage froid et collage a chaud |
WO2008121262A2 (en) | 2007-03-30 | 2008-10-09 | Corning Incorporated | Glass-ceramic-based semiconductor-on-insulator structures and method for making the same |
EP1978554A3 (en) * | 2007-04-06 | 2011-10-12 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor substrate comprising implantation and separation steps |
US7795114B2 (en) * | 2007-08-10 | 2010-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing methods of SOI substrate and semiconductor device |
US8455331B2 (en) * | 2007-10-10 | 2013-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
JP5511173B2 (ja) * | 2007-10-10 | 2014-06-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US20090223628A1 (en) * | 2008-03-07 | 2009-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus of composite substrate and manufacturing method of composite substrate with use of the manufacturing apparatus |
CN102203932B (zh) * | 2008-09-26 | 2015-06-17 | 康宁股份有限公司 | 玻璃-陶瓷基绝缘体上半导体结构及其制造方法 |
JP2010239123A (ja) * | 2009-03-12 | 2010-10-21 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
KR101058105B1 (ko) * | 2009-04-06 | 2011-08-24 | 삼성모바일디스플레이주식회사 | 액티브 매트릭스 기판의 제조방법 및 유기 발광 표시장치의 제조방법 |
KR101127574B1 (ko) * | 2009-04-06 | 2012-03-23 | 삼성모바일디스플레이주식회사 | 액티브 매트릭스 기판의 제조방법 및 유기 발광 표시장치의 제조방법 |
JP5455445B2 (ja) * | 2009-05-29 | 2014-03-26 | 信越化学工業株式会社 | 貼り合わせウェーハの製造方法 |
FR2949606B1 (fr) * | 2009-08-26 | 2011-10-28 | Commissariat Energie Atomique | Procede de detachement par fracture d'un film mince de silicium mettant en oeuvre une triple implantation |
US20110207306A1 (en) * | 2010-02-22 | 2011-08-25 | Sarko Cherekdjian | Semiconductor structure made using improved ion implantation process |
US8557679B2 (en) * | 2010-06-30 | 2013-10-15 | Corning Incorporated | Oxygen plasma conversion process for preparing a surface for bonding |
US8558195B2 (en) | 2010-11-19 | 2013-10-15 | Corning Incorporated | Semiconductor structure made using improved pseudo-simultaneous multiple ion implantation process |
US8196546B1 (en) | 2010-11-19 | 2012-06-12 | Corning Incorporated | Semiconductor structure made using improved multiple ion implantation process |
US8008175B1 (en) | 2010-11-19 | 2011-08-30 | Coring Incorporated | Semiconductor structure made using improved simultaneous multiple ion implantation process |
FR2974944B1 (fr) * | 2011-05-02 | 2013-06-14 | Commissariat Energie Atomique | Procédé de formation d'une fracture dans un matériau |
KR102082499B1 (ko) | 2011-08-26 | 2020-02-27 | 루미리즈 홀딩 비.브이. | 반도체 구조를 프로세싱하는 방법 |
JP2014078541A (ja) * | 2012-10-09 | 2014-05-01 | Fuji Electric Co Ltd | 半導体薄膜フィルムの製造方法 |
JP6149428B2 (ja) * | 2012-12-28 | 2017-06-21 | 住友電気工業株式会社 | 複合基板、複合基板を用いた半導体ウエハの製造方法、および複合基板用の支持基板 |
US9092187B2 (en) | 2013-01-08 | 2015-07-28 | Apple Inc. | Ion implant indicia for cover glass or display component |
US9623628B2 (en) | 2013-01-10 | 2017-04-18 | Apple Inc. | Sapphire component with residual compressive stress |
CN104145320B (zh) | 2013-02-12 | 2018-02-02 | 苹果公司 | 多步骤离子注入 |
US9416442B2 (en) | 2013-03-02 | 2016-08-16 | Apple Inc. | Sapphire property modification through ion implantation |
US10280504B2 (en) | 2015-09-25 | 2019-05-07 | Apple Inc. | Ion-implanted, anti-reflective layer formed within sapphire material |
WO2017069923A1 (en) * | 2015-10-23 | 2017-04-27 | Applied Materials, Inc. | Gapfill film modification for advanced cmp and recess flow |
EP4210092A1 (en) | 2018-06-08 | 2023-07-12 | GlobalWafers Co., Ltd. | Method for transfer of a thin layer of silicon |
CN113714649B (zh) * | 2021-08-25 | 2023-07-14 | 深圳市大族半导体装备科技有限公司 | 晶片的制造方法 |
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FR2858462B1 (fr) * | 2003-07-29 | 2005-12-09 | Soitec Silicon On Insulator | Procede d'obtention d'une couche mince de qualite accrue par co-implantation et recuit thermique |
US7146153B2 (en) | 2003-07-30 | 2006-12-05 | Sbc Knowledge Ventures, L.P. | Provisioning of wireless private access subscribers for location based services |
US7279369B2 (en) | 2003-08-21 | 2007-10-09 | Intel Corporation | Germanium on insulator fabrication via epitaxial germanium bonding |
US6852652B1 (en) | 2003-09-29 | 2005-02-08 | Sharp Laboratories Of America, Inc. | Method of making relaxed silicon-germanium on glass via layer transfer |
-
2005
- 2005-12-19 US US11/313,206 patent/US7456080B2/en not_active Expired - Fee Related
-
2006
- 2006-12-14 EP EP06126190A patent/EP1798765A3/en not_active Withdrawn
- 2006-12-18 TW TW095147583A patent/TW200737404A/zh unknown
- 2006-12-18 KR KR1020060129477A patent/KR20070065235A/ko not_active Application Discontinuation
- 2006-12-19 JP JP2006341002A patent/JP2007184581A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US7456080B2 (en) | 2008-11-25 |
EP1798765A2 (en) | 2007-06-20 |
US20070141802A1 (en) | 2007-06-21 |
KR20070065235A (ko) | 2007-06-22 |
JP2007184581A (ja) | 2007-07-19 |
EP1798765A3 (en) | 2007-07-04 |
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