TW200735387A - InN/TiO2 photosensitized electrode - Google Patents

InN/TiO2 photosensitized electrode

Info

Publication number
TW200735387A
TW200735387A TW095107066A TW95107066A TW200735387A TW 200735387 A TW200735387 A TW 200735387A TW 095107066 A TW095107066 A TW 095107066A TW 95107066 A TW95107066 A TW 95107066A TW 200735387 A TW200735387 A TW 200735387A
Authority
TW
Taiwan
Prior art keywords
inn
tio2
photosensitive layer
tio2 film
present
Prior art date
Application number
TW095107066A
Other languages
English (en)
Other versions
TWI299577B (zh
Inventor
Ming-Jang Lin
Yen-Cheng Tseng
Shan-Ming Lan
Yuan-Peng Li
wei-guang Diao
De-Zhi Xie
Ming-Chao Guo
Original Assignee
Atomic Energy Council
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atomic Energy Council filed Critical Atomic Energy Council
Priority to TW095107066A priority Critical patent/TW200735387A/zh
Priority to JP2006164510A priority patent/JP2007234569A/ja
Priority to US11/494,597 priority patent/US7622397B2/en
Publication of TW200735387A publication Critical patent/TW200735387A/zh
Application granted granted Critical
Publication of TWI299577B publication Critical patent/TWI299577B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/205—Light-sensitive devices comprising a semiconductor electrode comprising AIII-BV compounds with or without impurities, e.g. doping materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Hybrid Cells (AREA)
  • Photovoltaic Devices (AREA)
TW095107066A 2006-03-02 2006-03-02 InN/TiO2 photosensitized electrode TW200735387A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW095107066A TW200735387A (en) 2006-03-02 2006-03-02 InN/TiO2 photosensitized electrode
JP2006164510A JP2007234569A (ja) 2006-03-02 2006-06-14 ＩｎＮ／ＴｉＯ２光感作電極およびその製造方法
US11/494,597 US7622397B2 (en) 2006-03-02 2006-07-28 InN/TiO2 photosensitized electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095107066A TW200735387A (en) 2006-03-02 2006-03-02 InN/TiO2 photosensitized electrode

Publications (2)

Publication Number Publication Date
TW200735387A true TW200735387A (en) 2007-09-16
TWI299577B TWI299577B (zh) 2008-08-01

Family

ID=38471937

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095107066A TW200735387A (en) 2006-03-02 2006-03-02 InN/TiO2 photosensitized electrode

Country Status (3)

Country Link
US (1) US7622397B2 (zh)
JP (1) JP2007234569A (zh)
TW (1) TW200735387A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI470120B (zh) * 2011-04-19 2015-01-21 Iner Aec Executive Yuan 光觸媒鈦管陣列電極製作方法
CN106757128A (zh) * 2016-11-30 2017-05-31 彭州市运达知识产权服务有限公司 一种室内增氧装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200735386A (en) * 2006-03-02 2007-09-16 Atomic Energy Council InN/InP/TiO2 photosensitized electrode
CN100559610C (zh) * 2008-04-02 2009-11-11 中国科学院上海技术物理研究所 介孔二氧化钛/氧化锌复合薄膜的制备方法
US20130020113A1 (en) * 2010-01-27 2013-01-24 Javier Jesus Concepcion Corbea Nanoparticle Electrodes and Methods of Preparation
CN101820016B (zh) * 2010-04-16 2012-02-01 厦门大学 一种二氧化钛紫外光电探测器
CN103578782A (zh) * 2013-11-08 2014-02-12 蚌埠玻璃工业设计研究院 一种提高染料敏化电池纳晶TiO2电极光吸收效率的方法
CN106466616A (zh) * 2015-08-21 2017-03-01 宁波绿尚环保科技有限公司 一种ain掺杂改性可见光活性光触媒的制备方法
CN107039190B (zh) * 2017-04-21 2019-01-22 沛县国源光伏电力有限公司 一种包含二氧化钛空心球结构的染料敏化太阳能电池

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101117689B1 (ko) * 2005-01-22 2012-02-29 삼성전자주식회사 이종 염료를 포함하는 광흡수층 및 이를 구비한 태양전지
KR20060085465A (ko) * 2005-01-24 2006-07-27 삼성전자주식회사 연속상 반도체 전극, 그의 제조방법 및 이를 채용한태양전지
TW200735386A (en) * 2006-03-02 2007-09-16 Atomic Energy Council InN/InP/TiO2 photosensitized electrode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI470120B (zh) * 2011-04-19 2015-01-21 Iner Aec Executive Yuan 光觸媒鈦管陣列電極製作方法
CN106757128A (zh) * 2016-11-30 2017-05-31 彭州市运达知识产权服务有限公司 一种室内增氧装置

Also Published As

Publication number Publication date
JP2007234569A (ja) 2007-09-13
US20070207561A1 (en) 2007-09-06
TWI299577B (zh) 2008-08-01
US7622397B2 (en) 2009-11-24

Similar Documents

Publication Publication Date Title
TW200735387A (en) InN/TiO2 photosensitized electrode
Sun et al. Enhanced UV-light stability of organometal halide perovskite solar cells with interface modification and a UV absorption layer
Aitola et al. Encapsulation of commercial and emerging solar cells with focus on perovskite solar cells
JP5761030B2 (ja) バリアフィルムの製造方法
JP5853954B2 (ja) ガスバリア性フィルムの製造方法
US20140106151A1 (en) Gas barrier film, manufacturing method for gas barrier film, and electronic device
WO2007134322A3 (en) Method and structure for thin film photovoltaic materials using semiconductor materials
TW200743874A (en) Composite optical substrate
Lee et al. Fabrication of highly transparent self‐cleaning protection films for photovoltaic systems
Kim et al. Inorganic encapsulation method using solution-processible polysilazane for flexible solar cells
IN2012DN01227A (zh)
Lv et al. Effect of ammonia on morphology, wettability and photoresponse of ZnO nanorods grown by hydrothermal method
Jiang et al. Colored Silicon Heterojunction Solar Cells Exceeding 23.5% Efficiency Enabled by Luminescent Down‐Shift Quantum Dots
TW200735386A (en) InN/InP/TiO2 photosensitized electrode
Nazim et al. UV-Curable Polymer–QD Flexible films as the downconversion layer for improved performance of Cu (In, Ga) Se2 Solar Cells
TW200713585A (en) Method of manufacturing nano crystals and application of the same
JP2012044147A (ja) 光電デバイスでの反射防止バリア層
WO2008151067A3 (en) CHEMICAL VAPOR DEPOSITION OF CuInXGa1- X(SeyS1-y)2 THIN FILMS AND USES THEREOF
JP5861376B2 (ja) ガスバリア性フィルム、ガスバリア性フィルムの製造方法、及びガスバリア性フィルムを有する電子デバイス
WO2009037311A9 (fr) Procédé d'électrogreffage localisé sur des substrats semi-conducteurs photosensibles
JP5696667B2 (ja) 有機光電変換素子
JP5600981B2 (ja) ガスバリア性フィルム、有機デバイスの製造方法、および有機デバイス
CN100590904C (zh) 图案化制程及应用此制程的有机薄膜晶体管的制作方法
JP2011056775A (ja) 電子素子パネルの封止方法、フィルム複合体、電子素子パネルおよびその製造方法
TW200737532A (en) A design of transparent conducting anti-reflection laminate and solar cell

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees