TW200735098A - Memory element and memory - Google Patents

Memory element and memory

Info

Publication number
TW200735098A
TW200735098A TW095142260A TW95142260A TW200735098A TW 200735098 A TW200735098 A TW 200735098A TW 095142260 A TW095142260 A TW 095142260A TW 95142260 A TW95142260 A TW 95142260A TW 200735098 A TW200735098 A TW 200735098A
Authority
TW
Taiwan
Prior art keywords
memory
layer
memory element
memory layer
storing information
Prior art date
Application number
TW095142260A
Other languages
English (en)
Chinese (zh)
Other versions
TWI324770B (https=
Inventor
Masanori Hosomi
Hiroshi Kano
Yutaka Higo
Kazuhiro Bessho
Tetsuya Yamamoto
Hiroyuki Ohmori
Kazutaka Yamane
Yuki Oishi
Hajime Yamagishi
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200735098A publication Critical patent/TW200735098A/zh
Application granted granted Critical
Publication of TWI324770B publication Critical patent/TWI324770B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
TW095142260A 2005-12-02 2006-11-15 Memory element and memory TW200735098A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005349790 2005-12-02
JP2006222046A JP4187021B2 (ja) 2005-12-02 2006-08-16 記憶素子及びメモリ

Publications (2)

Publication Number Publication Date
TW200735098A true TW200735098A (en) 2007-09-16
TWI324770B TWI324770B (https=) 2010-05-11

Family

ID=37768675

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095142260A TW200735098A (en) 2005-12-02 2006-11-15 Memory element and memory

Country Status (5)

Country Link
US (1) US20070133264A1 (https=)
EP (1) EP1793385A1 (https=)
JP (1) JP4187021B2 (https=)
KR (1) KR20070058364A (https=)
TW (1) TW200735098A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9142769B2 (en) 2013-10-09 2015-09-22 Industrial Technology Research Institute Magnetic field-partitioned non-volatile memory

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009194210A (ja) * 2008-02-15 2009-08-27 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
JP6043478B2 (ja) * 2010-12-07 2016-12-14 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 磁気異方性物質の自由磁性層を含むストレージノード、これを含む磁気メモリ素子及びその製造方法
JP2012160681A (ja) * 2011-02-03 2012-08-23 Sony Corp 記憶素子、メモリ装置
US20160160553A1 (en) * 2014-12-04 2016-06-09 Ford Global Technologies, Llc Automatic dual electric motor tailgate lift system
FR3064395B1 (fr) * 2017-03-23 2021-12-10 Commissariat Energie Atomique Procede de formage d'une cellule memoire non volatile, cellule memoire non volatile formee suivant ce procede et dispositif microelectronique comportant des telles cellules memoire

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4462790B2 (ja) * 2001-09-04 2010-05-12 ソニー株式会社 磁気メモリ
TW595025B (en) * 2002-03-29 2004-06-21 Toshiba Corp Solid-state magnetic element and solid-state magnetic element array
US6888742B1 (en) * 2002-08-28 2005-05-03 Grandis, Inc. Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic element
JP2005064075A (ja) * 2003-08-20 2005-03-10 Toshiba Corp 磁気記憶装置及びその製造方法
JP2005093488A (ja) * 2003-09-12 2005-04-07 Sony Corp 磁気抵抗効果素子とその製造方法、および磁気メモリ装置とその製造方法
JP2006237329A (ja) * 2005-02-25 2006-09-07 Toshiba Corp 磁気記憶装置及び磁気記憶装置の書き込み方法
US7345855B2 (en) * 2005-09-07 2008-03-18 International Business Machines Corporation Tunnel barriers based on rare earth element oxides

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9142769B2 (en) 2013-10-09 2015-09-22 Industrial Technology Research Institute Magnetic field-partitioned non-volatile memory

Also Published As

Publication number Publication date
JP4187021B2 (ja) 2008-11-26
JP2007180487A (ja) 2007-07-12
TWI324770B (https=) 2010-05-11
KR20070058364A (ko) 2007-06-08
EP1793385A1 (en) 2007-06-06
US20070133264A1 (en) 2007-06-14

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees