TW200734630A - Defect inspection apparatus and defect inspection method - Google Patents

Defect inspection apparatus and defect inspection method

Info

Publication number
TW200734630A
TW200734630A TW095135685A TW95135685A TW200734630A TW 200734630 A TW200734630 A TW 200734630A TW 095135685 A TW095135685 A TW 095135685A TW 95135685 A TW95135685 A TW 95135685A TW 200734630 A TW200734630 A TW 200734630A
Authority
TW
Taiwan
Prior art keywords
light source
light
defect inspection
inspected
inspection
Prior art date
Application number
TW095135685A
Other languages
English (en)
Other versions
TWI336779B (en
Inventor
Noboru Yamaguchi
Yuudai Ishikawa
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200734630A publication Critical patent/TW200734630A/zh
Application granted granted Critical
Publication of TWI336779B publication Critical patent/TWI336779B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67294—Apparatus for monitoring, sorting or marking using identification means, e.g. labels on substrates or labels on containers
TW095135685A 2005-09-30 2006-09-27 Defect inspection apparatus, defect inspection method,method for fabricating photomask and method for transcribing pattern TWI336779B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005288563 2005-09-30

Publications (2)

Publication Number Publication Date
TW200734630A true TW200734630A (en) 2007-09-16
TWI336779B TWI336779B (en) 2011-02-01

Family

ID=37901566

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095135685A TWI336779B (en) 2005-09-30 2006-09-27 Defect inspection apparatus, defect inspection method,method for fabricating photomask and method for transcribing pattern

Country Status (4)

Country Link
US (1) US7355691B2 (zh)
KR (1) KR100925939B1 (zh)
CN (1) CN1940540A (zh)
TW (1) TWI336779B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI413768B (zh) * 2009-02-06 2013-11-01 Hoya Corp 圖案檢查方法、圖案檢查裝置、光罩製造方法、及圖案轉寫方法
TWI636249B (zh) * 2014-10-01 2018-09-21 信越半導體股份有限公司 貼合缺陷部的檢出方法以及檢查系統

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US7515283B2 (en) * 2006-07-11 2009-04-07 Tokyo Electron, Ltd. Parallel profile determination in optical metrology
US7469192B2 (en) * 2006-07-11 2008-12-23 Tokyo Electron Ltd. Parallel profile determination for an optical metrology system
TWI342461B (en) * 2006-12-11 2011-05-21 Newsoft Technology Corp System and method for assisting fixed-focus image-capturing device to focus
US20080311283A1 (en) * 2007-06-15 2008-12-18 Qimonda Ag Method of Inspecting and Manufacturing an Integrated Circuit
TWI431408B (zh) * 2007-07-23 2014-03-21 Hoya Corp 光罩資訊之取得方法、光罩之品質顯示方法、顯示裝置之製造方法以及光罩製品
JP5175605B2 (ja) * 2008-04-18 2013-04-03 株式会社日立ハイテクノロジーズ パターン形状検査方法
CN101566585B (zh) * 2008-04-22 2014-06-11 以色列商·应用材料以色列公司 评估物体的方法和系统
JP2010210974A (ja) * 2009-03-11 2010-09-24 Shin-Etsu Chemical Co Ltd ペリクルの製造方法及びペリクル
NL2004949A (en) * 2009-08-21 2011-02-22 Asml Netherlands Bv Inspection method and apparatus.
WO2012048186A2 (en) * 2010-10-08 2012-04-12 Dark Field Technologies, Inc. Retro-reflective imaging
US10460998B2 (en) * 2010-11-09 2019-10-29 Nikon Corporation Method for inspecting substrate, substrate inspection apparatus, exposure system, and method for producing semiconductor device
WO2012115013A1 (ja) * 2011-02-25 2012-08-30 株式会社ニコン 検査装置および半導体装置の製造方法
US9402036B2 (en) * 2011-10-17 2016-07-26 Rudolph Technologies, Inc. Scanning operation with concurrent focus and inspection
KR101376831B1 (ko) * 2012-03-27 2014-03-20 삼성전기주식회사 표면결함 검사방법
KR101683706B1 (ko) * 2012-09-28 2016-12-07 제이엑스 에네루기 가부시키가이샤 불규칙한 요철 표면을 가지는 기판을 검사하는 장치 및 이것을 사용한 검사 방법
CN104634792B (zh) * 2013-11-07 2018-07-13 沈阳芯源微电子设备有限公司 Pss良率在线监测方法
JP6436664B2 (ja) * 2014-07-14 2018-12-12 住友化学株式会社 基板の検査装置及び基板の検査方法
KR101618754B1 (ko) * 2015-04-21 2016-05-10 주식회사 리비콘 레이저 식각을 통한 전자 블라인드형 pdlc 필름 제조방법
JP2017009379A (ja) * 2015-06-19 2017-01-12 株式会社ニューフレアテクノロジー 検査装置および検査方法
CN105181302A (zh) * 2015-10-12 2015-12-23 国网天津市电力公司 线性光源生产过程中led光亮度一致性的检测装置
EP3208657A1 (en) * 2016-02-22 2017-08-23 Paul Scherrer Institut Method and system for high-throughput defect inspection using the contrast in the reduced spatial frequency domain
JP6688184B2 (ja) * 2016-07-20 2020-04-28 東レエンジニアリング株式会社 ワイドギャップ半導体基板の欠陥検査装置
JP7183155B2 (ja) * 2016-11-02 2022-12-05 コーニング インコーポレイテッド 透明基板上の欠陥部検査方法および装置
US11079430B2 (en) * 2016-11-29 2021-08-03 Ns Technologies, Inc. Electronic component handler and electronic component tester
US10429318B2 (en) * 2017-12-19 2019-10-01 Industrial Technology Research Institute Detection system for a multilayer film and method thereof using dual image capture devices for capturing forward scattered light and back scattered light
DE102018107112B9 (de) * 2018-03-26 2020-02-27 Carl Zeiss Smt Gmbh Verfahren zur Inspektion einer Maske
CN108693155B (zh) * 2018-05-18 2020-09-01 吉林大学 基于dmd的原子荧光多通道检测光源杂质干扰校正方法
CN109949286A (zh) * 2019-03-12 2019-06-28 北京百度网讯科技有限公司 用于输出信息的方法和装置
CN113466650B (zh) * 2021-07-06 2022-03-18 中国科学院国家空间科学中心 一种用于检测半导体器件硬缺陷故障点的定位装置及方法
CN115096222B (zh) * 2022-08-24 2022-12-20 中科卓芯半导体科技(苏州)有限公司 一种用于光掩膜基版的平面度检测方法及系统

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Publication number Priority date Publication date Assignee Title
US5838433A (en) * 1995-04-19 1998-11-17 Nikon Corporation Apparatus for detecting defects on a mask
JPH09236415A (ja) * 1996-03-01 1997-09-09 Hitachi Ltd パターン検出方法とその装置
US5777729A (en) 1996-05-07 1998-07-07 Nikon Corporation Wafer inspection method and apparatus using diffracted light
JP2000146853A (ja) * 1998-11-10 2000-05-26 Toshiba Corp レジストパターンの欠陥検査装置及び欠陥検査方法
JP2002141268A (ja) * 2000-11-01 2002-05-17 Hitachi Ltd 電子デバイス及び半導体集積回路装置の製造方法
KR20030002838A (ko) * 2001-06-29 2003-01-09 주식회사 하이닉스반도체 반도체 장치의 마스크 제조방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI413768B (zh) * 2009-02-06 2013-11-01 Hoya Corp 圖案檢查方法、圖案檢查裝置、光罩製造方法、及圖案轉寫方法
TWI636249B (zh) * 2014-10-01 2018-09-21 信越半導體股份有限公司 貼合缺陷部的檢出方法以及檢查系統
US10199280B2 (en) 2014-10-01 2019-02-05 Shin-Etsu Handotai Co., Ltd. Method for detecting bonding failure part and inspection system

Also Published As

Publication number Publication date
CN1940540A (zh) 2007-04-04
TWI336779B (en) 2011-02-01
KR100925939B1 (ko) 2009-11-09
US7355691B2 (en) 2008-04-08
KR20070037411A (ko) 2007-04-04
US20070076195A1 (en) 2007-04-05

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