TW200732847A - Top coat for lithography processes - Google Patents

Top coat for lithography processes

Info

Publication number
TW200732847A
TW200732847A TW096106563A TW96106563A TW200732847A TW 200732847 A TW200732847 A TW 200732847A TW 096106563 A TW096106563 A TW 096106563A TW 96106563 A TW96106563 A TW 96106563A TW 200732847 A TW200732847 A TW 200732847A
Authority
TW
Taiwan
Prior art keywords
top coat
lithography processes
silicon
containing polymer
optionally
Prior art date
Application number
TW096106563A
Other languages
English (en)
Chinese (zh)
Inventor
Scott Jeffrey Weigel
Peng Zhang
Thomas Albert Braymer
Gene Everad Parris
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of TW200732847A publication Critical patent/TW200732847A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW096106563A 2006-02-22 2007-02-26 Top coat for lithography processes TW200732847A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US77661006P 2006-02-22 2006-02-22
US11/706,243 US20070196773A1 (en) 2006-02-22 2007-02-15 Top coat for lithography processes

Publications (1)

Publication Number Publication Date
TW200732847A true TW200732847A (en) 2007-09-01

Family

ID=37872215

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096106563A TW200732847A (en) 2006-02-22 2007-02-26 Top coat for lithography processes

Country Status (6)

Country Link
US (1) US20070196773A1 (https=)
EP (1) EP1826613A3 (https=)
JP (1) JP2007226244A (https=)
KR (1) KR100893120B1 (https=)
CN (1) CN101063818A (https=)
TW (1) TW200732847A (https=)

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TWI481970B (zh) * 2008-07-24 2015-04-21 日產化學工業股份有限公司 塗敷組成物及圖型之形成方法
TWI877353B (zh) * 2020-04-21 2025-03-21 德商卡爾蔡司Ｓｍｔ有限公司 操作euv微影裝置的方法與euv微影裝置

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US20150041959A1 (en) * 2008-12-17 2015-02-12 Samsung Sdi Co., Ltd. Hardmask composition for forming resist underlayer film, process for producing a semiconductor integrated circuit device, and semiconductor integrated circuit device
KR101288572B1 (ko) * 2008-12-17 2013-07-22 제일모직주식회사 보관안정성이 우수한 레지스트 하층막용 하드마스크 조성물
JP5399347B2 (ja) * 2010-09-01 2014-01-29 信越化学工業株式会社 ケイ素含有膜形成用組成物、ケイ素含有膜形成基板及びこれを用いたパターン形成方法
CN102236253B (zh) * 2011-05-20 2012-11-07 潍坊星泰克微电子材料有限公司 用于微光刻工艺的多相高硅光刻胶成像方法、多相高硅光刻胶及应用
US20140342292A1 (en) * 2012-01-09 2014-11-20 Dow Corning Corporation Di-t-butoxydiacetoxysilane-based silsesquioxane resins as hard-mask antireflective coating material and method of making
MY172670A (en) * 2012-12-28 2019-12-10 Merck Patent Gmbh Printable diffusion barriers for silicon wafers
KR20170069914A (ko) * 2015-12-11 2017-06-21 삼성에스디아이 주식회사 감광성 수지 조성물, 그로부터 형성된 경화막, 및 경화막을 갖는 소자
US10260149B2 (en) * 2016-04-28 2019-04-16 Applied Materials, Inc. Side inject nozzle design for processing chamber
CN107403717B (zh) * 2016-04-28 2023-07-18 应用材料公司 一种用于处理腔室的改进侧注入喷嘴设计
KR102177417B1 (ko) * 2017-12-31 2020-11-11 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토레지스트 조성물 및 방법
CN111781220A (zh) * 2020-07-03 2020-10-16 中国科学院上海应用物理研究所 一种多功能同步辐射干涉曝光实验平台及实验方法
US12535738B2 (en) * 2021-04-15 2026-01-27 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresist top coating material for etching rate control
WO2025140917A1 (en) 2023-12-28 2025-07-03 Merck Patent Gmbh Top coat composition, and method for producing resist pattern and method for producing device using same

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI481970B (zh) * 2008-07-24 2015-04-21 日產化學工業股份有限公司 塗敷組成物及圖型之形成方法
TWI877353B (zh) * 2020-04-21 2025-03-21 德商卡爾蔡司Ｓｍｔ有限公司 操作euv微影裝置的方法與euv微影裝置
US12287588B2 (en) 2020-04-21 2025-04-29 Carl Zeiss Smt Gmbh Method for operating an EUV lithography apparatus, and EUV lithography apparatus

Also Published As

Publication number Publication date
US20070196773A1 (en) 2007-08-23
CN101063818A (zh) 2007-10-31
EP1826613A2 (en) 2007-08-29
KR20070085174A (ko) 2007-08-27
EP1826613A3 (en) 2011-01-12
JP2007226244A (ja) 2007-09-06
KR100893120B1 (ko) 2009-04-14

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