TW200729524A - Light reflectivity controlled photodiode cell, and method of manufacturing the same - Google Patents
Light reflectivity controlled photodiode cell, and method of manufacturing the sameInfo
- Publication number
- TW200729524A TW200729524A TW095130079A TW95130079A TW200729524A TW 200729524 A TW200729524 A TW 200729524A TW 095130079 A TW095130079 A TW 095130079A TW 95130079 A TW95130079 A TW 95130079A TW 200729524 A TW200729524 A TW 200729524A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- photodiode cell
- light
- manufacturing
- same
- Prior art date
Links
- 238000001579 optical reflectometry Methods 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 238000002161 passivation Methods 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000001427 coherent effect Effects 0.000 abstract 1
- 238000002310 reflectometry Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP05107734A EP1758173A1 (fr) | 2005-08-23 | 2005-08-23 | Cellule à photodiode à contrôle de la réflectivité de lumière, et procédé de fabrication d'une telle cellule |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200729524A true TW200729524A (en) | 2007-08-01 |
Family
ID=35501219
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095130079A TW200729524A (en) | 2005-08-23 | 2006-08-16 | Light reflectivity controlled photodiode cell, and method of manufacturing the same |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20070045683A1 (zh) |
| EP (2) | EP1758173A1 (zh) |
| CN (1) | CN1921152B (zh) |
| TW (1) | TW200729524A (zh) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3018954B1 (fr) * | 2014-03-20 | 2017-07-21 | Commissariat Energie Atomique | Procede d'optimisation du rendement quantique d'une photodiode |
| CN110546768B (zh) * | 2017-04-27 | 2023-04-07 | 京瓷株式会社 | 太阳能电池元件以及太阳能电池元件的制造方法 |
| JP7238657B2 (ja) * | 2019-07-16 | 2023-03-14 | セイコーエプソン株式会社 | 時計用部品、時計用ムーブメントおよび時計 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4488163A (en) * | 1981-01-19 | 1984-12-11 | Westinghouse Electric Corp. | Highly isolated photodetectors |
| US6218719B1 (en) * | 1998-09-18 | 2001-04-17 | Capella Microsystems, Inc. | Photodetector and device employing the photodetector for converting an optical signal into an electrical signal |
| US6221687B1 (en) * | 1999-12-23 | 2001-04-24 | Tower Semiconductor Ltd. | Color image sensor with embedded microlens array |
| JP2002151729A (ja) * | 2000-11-13 | 2002-05-24 | Sony Corp | 半導体装置及びその製造方法 |
| JP2003229562A (ja) * | 2002-02-05 | 2003-08-15 | Sony Corp | 半導体装置、その製造方法及び半導体製造装置 |
| JP3840214B2 (ja) * | 2003-01-06 | 2006-11-01 | キヤノン株式会社 | 光電変換装置及び光電変換装置の製造方法及び同光電変換装置を用いたカメラ |
| US7242069B2 (en) * | 2003-05-05 | 2007-07-10 | Udt Sensors, Inc. | Thin wafer detectors with improved radiation damage and crosstalk characteristics |
| JP5063875B2 (ja) * | 2005-07-27 | 2012-10-31 | パナソニック株式会社 | 光半導体装置の製造方法 |
-
2005
- 2005-08-23 EP EP05107734A patent/EP1758173A1/fr not_active Withdrawn
-
2006
- 2006-08-14 EP EP06118871A patent/EP1758174A3/fr not_active Withdrawn
- 2006-08-16 TW TW095130079A patent/TW200729524A/zh unknown
- 2006-08-21 US US11/465,898 patent/US20070045683A1/en not_active Abandoned
- 2006-08-22 CN CN2006101159913A patent/CN1921152B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP1758173A1 (fr) | 2007-02-28 |
| CN1921152B (zh) | 2010-12-15 |
| EP1758174A3 (fr) | 2008-03-05 |
| US20070045683A1 (en) | 2007-03-01 |
| EP1758174A2 (fr) | 2007-02-28 |
| CN1921152A (zh) | 2007-02-28 |
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