TW200729231A - Fuse circuit with leakage path elimination - Google Patents

Fuse circuit with leakage path elimination

Info

Publication number
TW200729231A
TW200729231A TW095143607A TW95143607A TW200729231A TW 200729231 A TW200729231 A TW 200729231A TW 095143607 A TW095143607 A TW 095143607A TW 95143607 A TW95143607 A TW 95143607A TW 200729231 A TW200729231 A TW 200729231A
Authority
TW
Taiwan
Prior art keywords
fuse
cut detection
unit
output
leakage path
Prior art date
Application number
TW095143607A
Other languages
English (en)
Other versions
TWI329321B (en
Inventor
Min-Soo Kim
Kyu-Han Han
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200729231A publication Critical patent/TW200729231A/zh
Application granted granted Critical
Publication of TWI329321B publication Critical patent/TWI329321B/zh

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/30Marginal testing, e.g. by varying supply voltage
    • G01R31/3004Current or voltage test
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317Testing of digital circuits
    • G01R31/31712Input or output aspects
    • G01R31/31717Interconnect testing
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317Testing of digital circuits
    • G01R31/3172Optimisation aspects, e.g. using functional pin as test pin, pin multiplexing

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
TW095143607A 2005-12-15 2006-11-24 Fuse circuit with leakage path elimination and method for sensing the state therefore TWI329321B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050123987A KR100660899B1 (ko) 2005-12-15 2005-12-15 누설 전류 패스를 제거할 수 있는 퓨즈 회로

Publications (2)

Publication Number Publication Date
TW200729231A true TW200729231A (en) 2007-08-01
TWI329321B TWI329321B (en) 2010-08-21

Family

ID=37815401

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095143607A TWI329321B (en) 2005-12-15 2006-11-24 Fuse circuit with leakage path elimination and method for sensing the state therefore

Country Status (3)

Country Link
US (1) US7459957B2 (zh)
KR (1) KR100660899B1 (zh)
TW (1) TWI329321B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101807434A (zh) * 2009-02-18 2010-08-18 精工电子有限公司 数据读出电路
TWI576848B (zh) * 2011-12-08 2017-04-01 Sii Semiconductor Corp Data reading device

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100871376B1 (ko) 2006-12-27 2008-12-02 주식회사 하이닉스반도체 퓨즈 회로
KR100930410B1 (ko) * 2008-03-12 2009-12-08 주식회사 하이닉스반도체 반도체 집적회로의 퓨즈 회로 및 그 제어 방법
KR20090098295A (ko) * 2008-03-13 2009-09-17 주식회사 하이닉스반도체 입력 래치회로
KR101068571B1 (ko) * 2009-07-03 2011-09-30 주식회사 하이닉스반도체 반도체 메모리 장치
US8207755B1 (en) * 2011-02-15 2012-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Low leakage power detection circuit
JP6370649B2 (ja) * 2014-09-09 2018-08-08 エイブリック株式会社 データ読出し回路

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US5115150A (en) * 1990-11-19 1992-05-19 Hewlett-Packard Co. Low power CMOS bus receiver with small setup time
US5313424A (en) * 1992-03-17 1994-05-17 International Business Machines Corporation Module level electronic redundancy
US5654651A (en) * 1994-10-18 1997-08-05 Hitachi, Ltd. CMOS static logic circuit
US5838620A (en) * 1995-04-05 1998-11-17 Micron Technology, Inc. Circuit for cancelling and replacing redundant elements
JPH10162598A (ja) * 1996-12-04 1998-06-19 Toshiba Microelectron Corp 半導体記憶装置
TW419828B (en) * 1997-02-26 2001-01-21 Toshiba Corp Semiconductor integrated circuit
US5991220A (en) * 1998-03-09 1999-11-23 Lucent Technologies, Inc. Software programmable write-once fuse memory
JP3161598B2 (ja) * 1998-04-30 2001-04-25 日本電気株式会社 半導体集積回路およびその製造方法
JP2000293996A (ja) * 1999-02-03 2000-10-20 Seiko Instruments Inc メモリ回路
KR100546300B1 (ko) * 1999-10-01 2006-01-26 삼성전자주식회사 칩 정보 출력회로
KR100363327B1 (ko) * 2000-03-23 2002-11-30 삼성전자 주식회사 퓨즈 회로 및 그것의 프로그램 상태 검출 방법
US6400208B1 (en) * 2000-08-09 2002-06-04 Agere Systems Guardian Corp. On-chip trim link sensing and latching circuit for fuse links
JP2002074979A (ja) * 2000-08-31 2002-03-15 Mitsubishi Electric Corp プログラム回路およびそれを用いた半導体記憶装置
US6426911B1 (en) * 2000-10-19 2002-07-30 Infineon Technologies Ag Area efficient method for programming electrical fuses
JP4530527B2 (ja) * 2000-12-08 2010-08-25 ルネサスエレクトロニクス株式会社 スタティック型半導体記憶装置
DE10063685A1 (de) * 2000-12-20 2002-07-18 Infineon Technologies Ag Schaltungsanordnung zur Ansteuerung einer programmierbaren Verbindung
JP2002217295A (ja) * 2001-01-12 2002-08-02 Toshiba Corp 半導体装置
JP3857573B2 (ja) * 2001-11-20 2006-12-13 富士通株式会社 ヒューズ回路
US6611165B1 (en) * 2002-06-25 2003-08-26 Micron Technology, Inc. Antifuse circuit with improved gate oxide reliabilty
US6798272B2 (en) * 2002-07-02 2004-09-28 Infineon Technologies North America Corp. Shift register for sequential fuse latch operation
JP2004265523A (ja) * 2003-03-03 2004-09-24 Renesas Technology Corp 半導体装置
ITRM20030329A1 (it) * 2003-07-07 2005-01-08 Micron Technology Inc Cella "famos" senza precarica e circuito latch in un
US7009443B2 (en) * 2004-06-07 2006-03-07 Standard Microsystems Corporation Method and circuit for fuse programming and endpoint detection
US7276955B2 (en) * 2005-04-14 2007-10-02 Micron Technology, Inc. Circuit and method for stable fuse detection

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101807434A (zh) * 2009-02-18 2010-08-18 精工电子有限公司 数据读出电路
CN101807434B (zh) * 2009-02-18 2015-06-17 精工电子有限公司 数据读出电路及半导体存储装置
TWI576848B (zh) * 2011-12-08 2017-04-01 Sii Semiconductor Corp Data reading device

Also Published As

Publication number Publication date
US7459957B2 (en) 2008-12-02
TWI329321B (en) 2010-08-21
KR100660899B1 (ko) 2006-12-26
US20070139096A1 (en) 2007-06-21

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees