MY158879A - Solid state relay - Google Patents
Solid state relayInfo
- Publication number
- MY158879A MY158879A MYPI2010000867A MYPI2010000867A MY158879A MY 158879 A MY158879 A MY 158879A MY PI2010000867 A MYPI2010000867 A MY PI2010000867A MY PI2010000867 A MYPI2010000867 A MY PI2010000867A MY 158879 A MY158879 A MY 158879A
- Authority
- MY
- Malaysia
- Prior art keywords
- solid state
- state relay
- resistor
- connection point
- capacitor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/08144—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in thyristor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/725—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for ac voltages or currents
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
Landscapes
- Electronic Switches (AREA)
Abstract
TO PROVIDE A SOLID STATE RELAY WHICH CAN SUPPRESS COST INCREASE, PREVENT ABNORMAL OPERATION, AND PREVENT FAILURE OF RESISTOR-ASSOCIATED PARTS OF A SNUBBER CIRCUIT. A SOLID STATE RELAY (20) INCLUDES A THIRD CONNECTION LINE (28C) WHICH CONNECTS A CONNECTION POINT D BETWEEN A CAPACITOR (C?) AND A RESISTOR (R?) CONSTITUTING A SNUBBER CIRCUIT (S) TO A GATE TERMINAL (G) OF A TRIACK (TA). FURTHERMORE, THE SOLID STATE RELAY (20) INCLUDES: A RESISTOR R2 ARRANGED ON THE THIRD CONNECTION LINE (28C); AND A CAPACITOR (C) ARRANGED BETWEEN A CONNECTION POINT E AND A CONNECTION POINT B. FIGURE 1
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007225159A JP5042749B2 (en) | 2007-08-31 | 2007-08-31 | Solid state relay |
Publications (1)
Publication Number | Publication Date |
---|---|
MY158879A true MY158879A (en) | 2016-11-30 |
Family
ID=40386928
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI2010000867A MY158879A (en) | 2007-08-31 | 2008-08-28 | Solid state relay |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5042749B2 (en) |
MY (1) | MY158879A (en) |
WO (1) | WO2009028189A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5794113B2 (en) | 2011-11-04 | 2015-10-14 | オムロン株式会社 | Solid state relay and load drive circuit |
KR20150072789A (en) * | 2013-12-20 | 2015-06-30 | 삼성전기주식회사 | Power supply device, composite electronic component and board for mounting the same |
CN104079280B (en) * | 2014-07-03 | 2018-02-02 | 库顿电子科技(厦门)有限公司 | A kind of solid-state relay of high withstand voltage |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0194715A (en) * | 1987-10-07 | 1989-04-13 | Hitachi Ltd | Solid state relay |
JP2629842B2 (en) * | 1988-06-20 | 1997-07-16 | オムロン株式会社 | Solid state relay |
JPH0715307A (en) * | 1993-06-15 | 1995-01-17 | Matsushita Electric Works Ltd | Solid-state relay |
-
2007
- 2007-08-31 JP JP2007225159A patent/JP5042749B2/en not_active Expired - Fee Related
-
2008
- 2008-08-28 MY MYPI2010000867A patent/MY158879A/en unknown
- 2008-08-28 WO PCT/JP2008/002338 patent/WO2009028189A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
JP5042749B2 (en) | 2012-10-03 |
WO2009028189A1 (en) | 2009-03-05 |
JP2009060322A (en) | 2009-03-19 |
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