TW200725872A - Single-poly EPROM device and method of manufacturing - Google Patents

Single-poly EPROM device and method of manufacturing

Info

Publication number
TW200725872A
TW200725872A TW095131849A TW95131849A TW200725872A TW 200725872 A TW200725872 A TW 200725872A TW 095131849 A TW095131849 A TW 095131849A TW 95131849 A TW95131849 A TW 95131849A TW 200725872 A TW200725872 A TW 200725872A
Authority
TW
Taiwan
Prior art keywords
gate
manufacturing
poly eprom
eprom device
additional
Prior art date
Application number
TW095131849A
Other languages
English (en)
Inventor
Ralph Oberhuber
Reiner Jumpertz
Original Assignee
Texas Instruments Deutschland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Deutschland filed Critical Texas Instruments Deutschland
Publication of TW200725872A publication Critical patent/TW200725872A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW095131849A 2005-08-29 2006-08-29 Single-poly EPROM device and method of manufacturing TW200725872A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102005040847A DE102005040847B4 (de) 2005-08-29 2005-08-29 Single-Poly-EPROM-Baustein und Verfahren zur Herstellung

Publications (1)

Publication Number Publication Date
TW200725872A true TW200725872A (en) 2007-07-01

Family

ID=37546558

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095131849A TW200725872A (en) 2005-08-29 2006-08-29 Single-poly EPROM device and method of manufacturing

Country Status (5)

Country Link
US (1) US7508027B2 (zh)
EP (1) EP1935016A1 (zh)
DE (1) DE102005040847B4 (zh)
TW (1) TW200725872A (zh)
WO (1) WO2007025956A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101030297B1 (ko) * 2008-07-30 2011-04-20 주식회사 동부하이텍 반도체 메모리 소자 및 그 제조 방법
US7989875B2 (en) * 2008-11-24 2011-08-02 Nxp B.V. BiCMOS integration of multiple-times-programmable non-volatile memories
US20110233643A1 (en) * 2010-03-23 2011-09-29 Chingis Technology Corporation PMOS Flash Cell Using Bottom Poly Control Gate
US9524780B2 (en) * 2011-03-15 2016-12-20 Hewlett-Packard Development Company, L.P. Memory cell having closed curve structure
US8873302B2 (en) * 2011-10-28 2014-10-28 Invensas Corporation Common doped region with separate gate control for a logic compatible non-volatile memory cell
US9230814B2 (en) 2011-10-28 2016-01-05 Invensas Corporation Non-volatile memory devices having vertical drain to gate capacitive coupling
US20150162369A1 (en) * 2013-12-09 2015-06-11 Tower Semiconductor Ltd. Single-Poly Floating Gate Solid State Direct Radiation Sensor Using STI Dielectric And Isolated PWells
KR102132845B1 (ko) * 2014-02-11 2020-07-13 에스케이하이닉스 주식회사 비휘발성 메모리 장치
CN111477626B (zh) * 2020-04-27 2022-06-21 复旦大学 一种半浮栅存储器及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4649520A (en) 1984-11-07 1987-03-10 Waferscale Integration Inc. Single layer polycrystalline floating gate
DE4200620C2 (de) * 1992-01-13 1994-10-06 Eurosil Electronic Gmbh Floating-Gate-EEPROM-Zelle mit Sandwichkoppelkapaziztät
EP0646288B1 (en) 1992-06-19 1998-12-16 Lattice Semiconductor Corporation Single polysilicon layer flash e?2 prom cell
US5480820A (en) * 1993-03-29 1996-01-02 Motorola, Inc. Method of making a vertically formed neuron transistor having a floating gate and a control gate and a method of formation
US5895945A (en) * 1995-11-14 1999-04-20 United Microelectronics Corporation Single polysilicon neuron MOSFET
US6627947B1 (en) 2000-08-22 2003-09-30 Lattice Semiconductor Corporation Compact single-poly two transistor EEPROM cell
US6747308B2 (en) * 2001-12-28 2004-06-08 Texas Instruments Incorporated Single poly EEPROM with reduced area
FR2837023B1 (fr) 2002-03-06 2004-05-28 St Microelectronics Sa Memoire non volatile programmable et effacable electriquement a une seule couche de materiau de grille
US6794236B1 (en) * 2002-06-03 2004-09-21 Lattice Semiconductor Corporation Eeprom device with improved capacitive coupling and fabrication process
US6770933B2 (en) 2002-12-11 2004-08-03 Texas Instruments Incorporated Single poly eeprom with improved coupling ratio

Also Published As

Publication number Publication date
DE102005040847B4 (de) 2011-08-18
US20070048939A1 (en) 2007-03-01
WO2007025956A1 (en) 2007-03-08
EP1935016A1 (en) 2008-06-25
DE102005040847A1 (de) 2007-03-01
US7508027B2 (en) 2009-03-24

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