TW200724649A - Composition and method for removing hard mask - Google Patents

Composition and method for removing hard mask

Info

Publication number
TW200724649A
TW200724649A TW095130479A TW95130479A TW200724649A TW 200724649 A TW200724649 A TW 200724649A TW 095130479 A TW095130479 A TW 095130479A TW 95130479 A TW95130479 A TW 95130479A TW 200724649 A TW200724649 A TW 200724649A
Authority
TW
Taiwan
Prior art keywords
hard mask
weight
composition
solution composition
removing hard
Prior art date
Application number
TW095130479A
Other languages
English (en)
Inventor
Kazuhiro Aoba
Satoshi Takei
Keisuke Hashimoto
Original Assignee
Nissan Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Ind Ltd filed Critical Nissan Chemical Ind Ltd
Publication of TW200724649A publication Critical patent/TW200724649A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
TW095130479A 2005-08-19 2006-08-18 Composition and method for removing hard mask TW200724649A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005238950 2005-08-19

Publications (1)

Publication Number Publication Date
TW200724649A true TW200724649A (en) 2007-07-01

Family

ID=37757636

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095130479A TW200724649A (en) 2005-08-19 2006-08-18 Composition and method for removing hard mask

Country Status (3)

Country Link
JP (1) JP4968477B2 (zh)
TW (1) TW200724649A (zh)
WO (1) WO2007020979A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109427554A (zh) * 2017-08-30 2019-03-05 台湾积体电路制造股份有限公司 一种化学溶液和形成半导体器件的方法
US10934485B2 (en) 2017-08-25 2021-03-02 Versum Materials Us, Llc Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2876669B1 (en) * 2012-07-19 2021-07-07 Nissan Chemical Corporation Cleaning fluid for semiconductor, and cleaning method using same
JP5988438B2 (ja) * 2012-08-02 2016-09-07 東京エレクトロン株式会社 塗布処理方法及び塗布処理装置
US9425053B2 (en) 2014-06-27 2016-08-23 International Business Machines Corporation Block mask litho on high aspect ratio topography with minimal semiconductor material damage
US10400167B2 (en) * 2015-11-25 2019-09-03 Versum Materials Us, Llc Etching compositions and methods for using same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3302120B2 (ja) * 1993-07-08 2002-07-15 関東化学株式会社 レジスト用剥離液
JP3710941B2 (ja) * 1998-09-22 2005-10-26 株式会社東芝 パターン形成方法
JP3976160B2 (ja) * 2000-02-29 2007-09-12 東京応化工業株式会社 アッシング後の処理液およびこれを用いた処理方法
JP2001272786A (ja) * 2000-03-24 2001-10-05 Toshiba Corp パターン形成方法
JP4142416B2 (ja) * 2002-11-27 2008-09-03 東京応化工業株式会社 シリコン含有２層レジストの剥離除去方法及びこれに用いる洗浄液
DE602004026635D1 (de) * 2003-12-26 2010-05-27 Nissan Chemical Ind Ltd Zusammensetzung zur bildung eines nitridbeschichtungsfilms für eine hartmaske

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10934485B2 (en) 2017-08-25 2021-03-02 Versum Materials Us, Llc Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device
CN109427554A (zh) * 2017-08-30 2019-03-05 台湾积体电路制造股份有限公司 一种化学溶液和形成半导体器件的方法
US10761423B2 (en) 2017-08-30 2020-09-01 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical composition for tri-layer removal
US11378882B2 (en) 2017-08-30 2022-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical composition for tri-layer removal

Also Published As

Publication number Publication date
WO2007020979A1 (ja) 2007-02-22
JPWO2007020979A1 (ja) 2009-02-26
JP4968477B2 (ja) 2012-07-04

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