TW200722756A - Apparatus and method for inspecting fine structure and inspection program - Google Patents

Apparatus and method for inspecting fine structure and inspection program

Info

Publication number
TW200722756A
TW200722756A TW095129641A TW95129641A TW200722756A TW 200722756 A TW200722756 A TW 200722756A TW 095129641 A TW095129641 A TW 095129641A TW 95129641 A TW95129641 A TW 95129641A TW 200722756 A TW200722756 A TW 200722756A
Authority
TW
Taiwan
Prior art keywords
measured
chip
fine structure
inspection program
inspecting fine
Prior art date
Application number
TW095129641A
Other languages
Chinese (zh)
Other versions
TWI293367B (en
Inventor
Masami Yakabe
Naoki Ikeuchi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200722756A publication Critical patent/TW200722756A/en
Application granted granted Critical
Publication of TWI293367B publication Critical patent/TWI293367B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2829—Testing of circuits in sensor or actuator systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0035—Testing
    • B81C99/005—Test apparatus
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P21/00—Testing or calibrating of apparatus or devices covered by the preceding groups
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
    • G01P2015/0842—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass the mass being of clover leaf shape

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Engineering & Computer Science (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)

Abstract

A chip to be measured in a three-dimensional acceleration sensor is loaded on a chuck (SP1), a probe needle is shifted to the chip to be measured (SP2), fritting control is performed (SP4), the probe needle is connected to an electrode pad of the chip to be measured, and DC test is performed (SP7-SP10). Then, vibration test is performed by applying testing acoustic waves to a movable section of the chip to be measured from a speaker (SP11-SP13), and based on the results, characteristics of the three-dimensional acceleration sensor are measured.
TW095129641A 2005-08-11 2006-08-11 Apparatus and method for inspecting fine structure and inspection program TW200722756A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005233510 2005-08-11

Publications (2)

Publication Number Publication Date
TW200722756A true TW200722756A (en) 2007-06-16
TWI293367B TWI293367B (en) 2008-02-11

Family

ID=37727369

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095129641A TW200722756A (en) 2005-08-11 2006-08-11 Apparatus and method for inspecting fine structure and inspection program

Country Status (3)

Country Link
JP (1) JPWO2007018186A1 (en)
TW (1) TW200722756A (en)
WO (1) WO2007018186A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009139172A (en) * 2007-12-05 2009-06-25 Tokyo Electron Ltd Displacement amount detector of microstructure
CN103018651B (en) * 2012-12-06 2014-09-03 中国电子科技集团公司第十三研究所 On-chip testing system of micro-electromechanical system (MEMS) device and testing method thereof
EP4443172A1 (en) * 2023-04-06 2024-10-09 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Method of and sensing probe device for measuring a parameter of a quantum chip

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0267956A (en) * 1988-09-02 1990-03-07 Oki Electric Ind Co Ltd Apparatus for detecting lead-open defect of electronic part
JP2944056B2 (en) * 1990-08-06 1999-08-30 東京エレクトロン株式会社 Contact detection device for electric circuit measurement probe and electric circuit measurement device using this contact detection device
US5251469A (en) * 1991-04-29 1993-10-12 Rockwell International Corporation Calibration system
JPH0534371A (en) * 1991-07-31 1993-02-09 Tokai Rika Co Ltd Measuring apparatus for sensitivity of semiconductor acceleration sensor
JPH06313785A (en) * 1993-04-28 1994-11-08 Hioki Ee Corp Detecting method of fault of soldering of pack-aged component by vibration, vibration generating device and vibration-generating and measuring probe unit
JPH08327690A (en) * 1995-05-31 1996-12-13 Nec Yamagata Ltd Method and equipment for inspecting semiconductor wafer
JPH08330368A (en) * 1995-05-31 1996-12-13 Mitsubishi Electric Corp Semiconductor circuit device group and its probe test
JPH0933567A (en) * 1995-07-21 1997-02-07 Akebono Brake Ind Co Ltd Method and device for inspecting sensor chip of semiconductor acceleration sensor
JP3202669B2 (en) * 1997-10-29 2001-08-27 九州日本電気株式会社 Electrical characteristics measurement method
JP4841737B2 (en) * 2000-08-21 2011-12-21 東京エレクトロン株式会社 Inspection method and inspection apparatus

Also Published As

Publication number Publication date
TWI293367B (en) 2008-02-11
JPWO2007018186A1 (en) 2009-02-19
WO2007018186A1 (en) 2007-02-15

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