JPH0534371A - Measuring apparatus for sensitivity of semiconductor acceleration sensor - Google Patents

Measuring apparatus for sensitivity of semiconductor acceleration sensor

Info

Publication number
JPH0534371A
JPH0534371A JP19159791A JP19159791A JPH0534371A JP H0534371 A JPH0534371 A JP H0534371A JP 19159791 A JP19159791 A JP 19159791A JP 19159791 A JP19159791 A JP 19159791A JP H0534371 A JPH0534371 A JP H0534371A
Authority
JP
Japan
Prior art keywords
chip
sensor
sensitivity
flow rate
sensor output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19159791A
Other languages
Japanese (ja)
Inventor
Hitoshi Iwata
仁 岩田
Koichi Itoigawa
貢一 糸魚川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokai Rika Co Ltd
Original Assignee
Tokai Rika Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokai Rika Co Ltd filed Critical Tokai Rika Co Ltd
Priority to JP19159791A priority Critical patent/JPH0534371A/en
Publication of JPH0534371A publication Critical patent/JPH0534371A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00Subject matter not provided for in other groups of this subclass
    • B81C99/0035Testing
    • B81C99/005Test apparatus

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

PURPOSE:To measure sensitivity from a sensor output when a specified flow rate of air is blow against a chip to be inspected in a wafer. CONSTITUTION:This apparatus is made up of a means 3 (31-34) which blows a specified flow rate of air against a chip 10 to be inspected having a cantilever 11 in a wafer 1, a means 4 which is connected to a chip to be inspected through a probe and performs an electric processing of a change in the resistance value of a strain gauge resistor 12 of the chip to be inspected to obtain a sensor sensitivity and a means 5 which determines a sensor sensitivity by a data processing of the sensor output to evaluate the sensor sensitivity. In the measurement of the sensor sensitivity. air is blown to the cantilever by controlling the necessary flow rate thereof so that the sensor output of the chip to be inspected be within an allowable range preset from the measurement results with a master chip. A sensor output voltage is extracted from the change in the resistance value corresponding to the current deformation value of the cantilever and it is judged whether the voltage value is within an allowable range preset to determine the propriety of an acceleration sensor.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はセンサ感度をウエハ状態
で測定する半導体加速度センサの感度測定装置に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor acceleration sensor sensitivity measuring device for measuring sensor sensitivity in a wafer state.

【0002】[0002]

【従来の技術】半導体加速度センサは、シリコン単結晶
基板上に拡散形成された歪ゲージ抵抗体および該歪ゲー
ジ抵抗体に機械的応力を加えるダイヤフラムやカンチレ
バーを備えており、該基板に加速度が加わると、歪ゲー
ジ抵抗体の抵抗値が変化し、これに応じたセンサ出力を
得るように構成されている。半導体加速度センサでは各
歪ゲージ抵抗体の抵抗値の不均一やダイヤフラム等の厚
みの不均一によってセンサ特性にバラツキが発生する。
そのため、歪ゲージ抵抗体によるブリッジ回路に調整用
抵抗を接続し、この電気的特性の測定結果から調整用抵
抗の抵抗値を変化させて調整している。また半導体加速
度センサの良否判定は、実際に加速または減速時の加速
度を印加し、そのときに測定されるセンサ出力が許容範
囲内にあるか否かによって行われている。更にウエハ状
態で圧力センサの特性を検定するものとして、特開昭6
2ー32332号に記載されたものが知られている。
2. Description of the Related Art A semiconductor acceleration sensor is provided with a strain gauge resistor diffused and formed on a silicon single crystal substrate and a diaphragm or a cantilever for applying mechanical stress to the strain gauge resistor, and acceleration is applied to the substrate. Then, the resistance value of the strain gauge resistor changes, and a sensor output corresponding to the change is obtained. In a semiconductor acceleration sensor, variations in sensor characteristics occur due to uneven resistance values of strain gauge resistors and uneven thickness of diaphragms and the like.
Therefore, an adjustment resistor is connected to a bridge circuit formed by a strain gauge resistor, and the resistance value of the adjustment resistor is changed from the measurement result of the electrical characteristics for adjustment. Further, the quality of the semiconductor acceleration sensor is determined by actually applying acceleration during acceleration or deceleration and determining whether or not the sensor output measured at that time is within an allowable range. Further, as a method for verifying the characteristics of the pressure sensor in a wafer state, Japanese Patent Laid-Open Publication No. 6-86
The one described in 2-32332 is known.

【0003】[0003]

【発明が解決しようとする課題】このように半導体加速
度センサの検査は、センサチップを組み込んだ状態で行
われているため、加減速の為の装置が大掛かりになると
いう問題があった。本発明の目的は、ウエハ状態の検定
チップに所定の流量の空気を吹き付けたときのセンサ出
力から感度を測定する半導体加速度センサの感度測定装
置を提供することである。
As described above, since the semiconductor acceleration sensor is inspected in the state where the sensor chip is incorporated, there is a problem that the device for accelerating and decelerating becomes large-scale. An object of the present invention is to provide a sensitivity measuring device for a semiconductor acceleration sensor, which measures the sensitivity from the sensor output when a predetermined flow rate of air is blown on a wafer-state verification chip.

【0004】[0004]

【課題を解決するための手段】上記の目的を達成するた
めに、本発明の半導体加速度センサの感度測定装置はセ
ンサ感度をウエハ状態で測定する半導体加速度センサの
感度測定装置において、前記ウエハ状態のカンチレバー
を有する検定チップに所定の流量の空気を吹き付ける手
段と、前記検定チップとプローブを介して接続され、該
検定チップの歪ゲージ抵抗体の抵抗値変化を電気的に処
理してセンサ出力を得る手段と、該センサ出力をデータ
処理してセンサ感度を求め、このセンサ感度を評価する
手段とから構成されたものである。
In order to achieve the above object, a semiconductor acceleration sensor sensitivity measuring apparatus according to the present invention is a semiconductor acceleration sensor sensitivity measuring apparatus for measuring sensor sensitivity in a wafer state. Means for blowing a predetermined flow rate of air to the assay chip having a cantilever and the assay chip are connected via a probe, and the resistance value change of the strain gauge resistor of the assay chip is electrically processed to obtain a sensor output. And means for processing the sensor output to obtain the sensor sensitivity and evaluating the sensor sensitivity.

【0005】[0005]

【作用】マスタチップによる測定結果から検定チップの
センサ出力が予め設定された許容範囲に入るのに必要な
空気流量を決定し、該所定の空気流量を検定チップのカ
ンチレバーに吹き付ける。これによりカンチレバーが変
形し、歪ゲージ抵抗体の抵抗値が変化する。このカンチ
レバーの変形量に応じた抵抗値変化を電気的に処理して
センサ出力を得る。そしてセンサ出力からセンサ感度を
求め、この値が予め設定された許容範囲内に入っている
か否かを判断して半導体加速度センサの良否を判定され
る。
The air flow rate required for the sensor output of the verification chip to fall within the preset allowable range is determined from the measurement result of the master chip, and the predetermined air flow rate is blown to the cantilever of the verification chip. As a result, the cantilever is deformed, and the resistance value of the strain gauge resistor changes. A sensor output is obtained by electrically processing the resistance value change corresponding to the deformation amount of the cantilever. Then, the sensor sensitivity is obtained from the sensor output, and it is determined whether or not this value is within a preset allowable range to determine the quality of the semiconductor acceleration sensor.

【0006】[0006]

【実施例】本発明の実施例を説明する。図1は半導体加
速度センサの感度測定装置の回路構成を示す。図2は半
導体加速度センサの感度測定を説明するための概念図で
ある。なお、本実施例は半導体加速度センサとして、カ
ンチレバーを有する半導体加速度センサにより説明す
る。感度測定装置は、シリコンウエハ1の一つのセンサ
チップ(以下「検定チップ10」という)および標準と
なるマスタチップ2の各カンチレバー11,21に所定
の流量の空気を吹き付けるための制御を行う空気流量制
御装置3と、検定チップ10およびマスタチップ2の歪
ゲージ抵抗体12,22にプローブを接続し、このプロ
ーブを介して取り出される抵抗値変化を電気的に処理
し、マスタチップ2によるセンサ出力および検定チップ
10によるセンサ出力を得るセンサ出力装置4と、該マ
スタチップ2によるセンサ出力に基づいて上記空気流量
制御装置3が吹き付ける空気流量を調節し、この空気流
量による検定チップ10のセンサ出力が予め設定された
許容範囲内にあるか否かを判定して検定チップの評価を
行うと共に、その評価データを出力処理するデータ処理
装置5と、該データ処理装置から送られる良否判定の結
果をプリントしたり、表示したりする出力装置6と、良
否判定の基礎データや判定結果データ等の評価データを
保存する記憶装置7とから構成されている。
EXAMPLES Examples of the present invention will be described. FIG. 1 shows a circuit configuration of a sensitivity measuring device for a semiconductor acceleration sensor. FIG. 2 is a conceptual diagram for explaining the sensitivity measurement of the semiconductor acceleration sensor. In this embodiment, the semiconductor acceleration sensor will be described by using a semiconductor acceleration sensor having a cantilever. The sensitivity measuring device controls the air flow rate for blowing a predetermined flow rate of air to each of the cantilevers 11 and 21 of one sensor chip of the silicon wafer 1 (hereinafter referred to as “verification chip 10”) and the standard master chip 2. A probe is connected to the control device 3 and the strain gauge resistors 12 and 22 of the verification chip 10 and the master chip 2, and the resistance value change taken out through this probe is electrically processed, and the sensor output by the master chip 2 and The sensor output device 4 for obtaining the sensor output from the verification chip 10 and the air flow rate blown by the air flow rate control device 3 are adjusted based on the sensor output from the master chip 2, and the sensor output of the verification chip 10 based on this air flow rate is adjusted in advance. The evaluation chip is evaluated by determining whether it is within the set tolerance range, and the evaluation data is evaluated. A data processing device 5 that outputs data, an output device 6 that prints or displays the result of quality determination sent from the data processing device, and evaluation data such as basic data of determination of quality and determination result data. The storage device 7 stores the data.

【0007】空気流量制御装置3は、空気源31により
供給された加圧空気を圧力レギュレータ32にて一定の
圧力に調節し、この圧力調節された空気を流量制御弁3
3で所定の流量に制御して切換弁34を介してノズルか
ら検定チップ10またはマスタチップ2のカンチレバー
11,21に吹き付けるための制御を行う。検定チップ
10に吹き付ける空気流量は、マスタチップ2の歪ゲー
ジ抵抗体22によって得られるセンサ出力が予め設定さ
れた許容範囲に入るために必要な空気流量から決定され
る。センサ出力装置4は、シリコンウエハ上の複数の検
定チップとプローブにより接続され、このプローブを介
して検定チップをスキャンすることにより得られる各検
定チップからの電気信号を処理してセンサ出力を検出
し、この検出されたセンサ出力をデータ処理装置5に送
る。
The air flow rate control device 3 adjusts the pressurized air supplied from the air source 31 to a constant pressure by the pressure regulator 32, and adjusts the pressure-adjusted air to the flow rate control valve 3
The flow rate is controlled to 3 at a predetermined flow rate, and control is performed to spray the cantilever 11, 21 of the verification chip 10 or the master chip 2 from the nozzle via the switching valve 34. The air flow rate blown onto the verification chip 10 is determined from the air flow rate required for the sensor output obtained by the strain gauge resistor 22 of the master chip 2 to fall within a preset allowable range. The sensor output device 4 is connected to a plurality of assay chips on a silicon wafer by a probe, processes an electrical signal from each assay chip obtained by scanning the assay chip through the probe, and detects a sensor output. , And sends the detected sensor output to the data processing device 5.

【0008】シリコンウエハ1は載置台にセットされ、
この載置台に対して三次元方向に可動自在なノズルが配
置されている。したがって、シリコンウエハ1を移動さ
せることなく、任意の検定チップ10のカンチレバー1
1上にノズルを合わせることができる。またノズルを垂
直方向に移動させることにより検定チップとの距離を変
えることができる。センサチップ10は、シリコンウエ
ハ1上に半導体製造技術により複数個作製され、その一
つのセンサチップ10は、図2に示すように、片持構造
のカンチレバー11およびこのカンチレバー11の振動
によって応力ひずみの発生する部位(カンチレバーの根
元部)に拡散形成された歪ゲージ抵抗体12を備えてい
る。カンチレバー11は、異方性エッチングにより形成
されるチップ基板10aから延びる薄肉部分11aとこ
の薄肉部分11aに連続して設けられるおもり部となる
厚肉部分11bを有し、薄肉部分11aとチップ基板と
の接続部分であるカンチレバー根元部には歪ゲージ抵抗
体12が配置されている。歪ゲージ抵抗体12近傍のチ
ップ基板10aには外部処理回路、この場合はセンサ出
力装置4にプローブを介して接続するためのパッド10
bが設けられ、このパッド10bと歪ゲージ抵抗体12
との間に配線10cが施されている。
The silicon wafer 1 is set on the mounting table,
A nozzle that is movable in three dimensions is arranged on the mounting table. Therefore, the cantilever 1 of an arbitrary assay chip 10 can be operated without moving the silicon wafer 1.
Nozzles can be fitted over 1. The distance from the assay chip can be changed by moving the nozzle in the vertical direction. A plurality of sensor chips 10 are manufactured on the silicon wafer 1 by a semiconductor manufacturing technique, and one sensor chip 10 has a cantilever 11 having a cantilever structure and a stress strain caused by vibration of the cantilever 11 as shown in FIG. The strain gauge resistor 12 is provided so as to be diffused and formed at a portion (root portion of the cantilever) where the strain is generated. The cantilever 11 has a thin portion 11a extending from the chip substrate 10a formed by anisotropic etching, and a thick portion 11b serving as a weight portion provided continuously to the thin portion 11a, and the thin portion 11a and the chip substrate are provided. A strain gauge resistor 12 is arranged at the root of the cantilever, which is the connection part of the. On the chip substrate 10a near the strain gauge resistor 12, an external processing circuit, in this case, a pad 10 for connecting to the sensor output device 4 via a probe.
b is provided, and the pad 10b and the strain gauge resistor 12 are provided.
The wiring 10c is provided between the line and.

【0009】次に上記半導体加速度センサの感度測定に
ついて説明する。図3はマスタチップによるセンサ出力
電圧Vout(mV)と吹き付け流量(l/min)の関係を示
す。図4は、感度測定のフローチャートを示す。まず、
マスタチップの測定では所定の流量の空気をマスタチッ
プに吹き付け、マスタチップのカンチレバーを風量に応
じて変形させる。このときのセンサ出力を読み取り、デ
ータ処理装置において処理し、検定チップのセンサ出力
が予め設定された許容範囲に入るのに必要な空気流量を
決定する(S1)。空気流量制御装置は決定された空気
流量を供給するように流量制御弁を制御する(S2)。
そして検定チップ上にノズルをセットし(S3)、検定
チップを測定する(S4)。このときのセンサ出力は許
容範囲内にあるか否かを判断され、許容範囲内にあれば
合格とし、また許容範囲外であれば不合格にする(S
5)。このように検定チップの良否判定の結果はプリン
トアウトや表示等の出力処理される(S6)。また各検
定チップの評価データは保存処理される(S7)。そし
てS3にリターンし、次の検定チップの測定を行う。
Next, the sensitivity measurement of the semiconductor acceleration sensor will be described. FIG. 3 shows the relationship between the sensor output voltage Vout (mV) and the spraying flow rate (l / min) by the master chip. FIG. 4 shows a flowchart of sensitivity measurement. First,
In the measurement of the master chip, a predetermined flow rate of air is blown to the master chip, and the cantilever of the master chip is deformed according to the air volume. The sensor output at this time is read and processed by the data processing device to determine the air flow rate required for the sensor output of the verification chip to fall within a preset allowable range (S1). The air flow rate control device controls the flow rate control valve so as to supply the determined air flow rate (S2).
Then, the nozzle is set on the assay chip (S3), and the assay chip is measured (S4). At this time, it is judged whether or not the sensor output is within the permissible range. If the sensor output is within the permissible range, the result is passed, and if it is out of the permissible range, the process is rejected (S
5). In this way, the result of the quality judgment of the test chip is output such as printout or display (S6). Further, the evaluation data of each assay chip is stored (S7). Then, the process returns to S3, and the next assay chip is measured.

【0010】[0010]

【発明の効果】上述のとおり、本発明によれば、シリコ
ンウエハ状態の検定チップに外力を印加できるので、必
要な出力感度になるように外付けの感度調整用抵抗で機
械的トリミングが可能となる。また検定チップに所定の
流量の空気を吹き付けて外力を作用させているので、流
量制御による外力の調整が容易でき、その装置構成が簡
単である。
As described above, according to the present invention, since an external force can be applied to the verification chip in the silicon wafer state, it is possible to perform mechanical trimming with an external resistance adjusting resistor so that the required output sensitivity is obtained. Become. Further, since a predetermined flow rate of air is blown to the verification chip to exert an external force, the external force can be easily adjusted by controlling the flow rate, and the device configuration is simple.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例を示す半導体加速度センサの感
度測定装置の構成図である。
FIG. 1 is a configuration diagram of a sensitivity measuring device for a semiconductor acceleration sensor showing an embodiment of the present invention.

【図2】センサチップの拡大図で、図2Aは断面図、図
2Bは平面図である。
FIG. 2 is an enlarged view of a sensor chip, FIG. 2A is a sectional view, and FIG. 2B is a plan view.

【図3】センサ出力電圧と吹き付け流量の関係を示す図
である。
FIG. 3 is a diagram showing a relationship between a sensor output voltage and a blowing flow rate.

【図4】半導体加速度センサの感度測定のフローチャー
トである。
FIG. 4 is a flowchart of sensitivity measurement of a semiconductor acceleration sensor.

【符号の説明】[Explanation of symbols]

1 シリコンウエハ 2 マスタチップ 3 空気流量制御装置 4 センサ出力装置 5 データ処理装置 6 出力装置 7 記憶装置 10 検定チップ 31 空気源 32 圧力レギュレータ 33 流量制御弁 34 切換弁 1 Silicon Wafer 2 Master Chip 3 Air Flow Control Device 4 Sensor Output Device 5 Data Processing Device 6 Output Device 7 Storage Device 10 Verification Chip 31 Air Source 32 Pressure Regulator 33 Flow Control Valve 34 Switching Valve

Claims (1)

【特許請求の範囲】 【請求項1】 センサ感度をウエハ状態で測定する半導
体加速度センサの感度測定装置において、前記ウエハ状
態の検定チップに所定の流量の空気を吹き付ける手段
と、前記検定チップとプローブを介して接続され、該検
定チップの歪ゲージの抵抗値変化を電気的に処理してセ
ンサ出力を得る手段と、該センサ出力をデータ処理して
センサ感度を求め、このセンサ感度を評価する手段とか
ら構成された半導体加速度センサの感度測定装置。
Claim: What is claimed is: 1. In a semiconductor acceleration sensor sensitivity measuring device for measuring sensor sensitivity in a wafer state, a means for blowing a predetermined flow rate of air to the wafer state inspection chip, the inspection chip and the probe. And a means for electrically processing a resistance value change of a strain gauge of the test chip to obtain a sensor output, and a means for processing the sensor output to obtain a sensor sensitivity and evaluating the sensor sensitivity. A sensitivity measuring device for a semiconductor acceleration sensor comprising:
JP19159791A 1991-07-31 1991-07-31 Measuring apparatus for sensitivity of semiconductor acceleration sensor Pending JPH0534371A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19159791A JPH0534371A (en) 1991-07-31 1991-07-31 Measuring apparatus for sensitivity of semiconductor acceleration sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19159791A JPH0534371A (en) 1991-07-31 1991-07-31 Measuring apparatus for sensitivity of semiconductor acceleration sensor

Publications (1)

Publication Number Publication Date
JPH0534371A true JPH0534371A (en) 1993-02-09

Family

ID=16277289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19159791A Pending JPH0534371A (en) 1991-07-31 1991-07-31 Measuring apparatus for sensitivity of semiconductor acceleration sensor

Country Status (1)

Country Link
JP (1) JPH0534371A (en)

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