JP4712474B2 - Semiconductor device, semiconductor device manufacturing method, semiconductor device manufacturing method program, and semiconductor manufacturing apparatus - Google Patents

Description

  The present invention relates to a semiconductor device having a microstructure such as MEMS (Micro Electro Mechanical Systems), a manufacturing method thereof, a manufacturing method program thereof, and a semiconductor manufacturing device.

  In recent years, MEMS, which is a device in which various functions such as mechanical, electronic, optical, chemical, etc., are integrated, particularly using semiconductor microfabrication technology, has attracted attention. As MEMS technology that has been put into practical use, MEMS devices have been mounted on acceleration sensors, pressure sensors, air flow sensors, and the like, which are microsensors, for example, as various sensors for automobiles and medical use. In addition, by adopting this MEMS technology in the ink jet printer head, it is possible to increase the number of nozzles for ejecting ink and to eject ink accurately, thereby improving the image quality and increasing the printing speed. Furthermore, a micromirror array used in a reflective projector is also known as a general MEMS device.

  In the future, various sensors and actuators using MEMS technology will be developed, which will be applied to optical communication and mobile devices, computer peripherals, bioanalysis and portable power supplies. Is expected to be. In the Technical Survey Report No. 3 (issued by the Industrial Technology Division, Industrial Technology and Environment Bureau, Ministry of Economy, Trade and Industry, published on March 28, 2003), there are various MEMS technologies on the agenda of the state of technology and issues related to MEMS. It has been introduced.

  On the other hand, with the development of MEMS devices, a method for appropriately inspecting the fine structure is also important because of the fine structure. Conventionally, the device has been rotated after packaging, or its characteristics have been evaluated using means such as vibration, but proper inspection has been performed at the initial stage such as the wafer state after microfabrication technology. By detecting defects, the yield can be improved and the manufacturing cost can be further reduced. Japanese Patent Laid-Open No. 5-34371 proposes an inspection method for detecting the resistance value of an acceleration sensor that is changed by blowing air to the acceleration sensor formed on the wafer to determine the characteristics of the acceleration sensor. ing.

  Also, before the package, device variations that occur in the manufacturing stage are compensated. For example, Japanese Patent Application Laid-Open No. 10-70268 discloses a method for adjusting an offset voltage, which is a sensor output generated due to device variations occurring in the manufacturing stage for a semiconductor pressure sensor.

This makes it possible to compensate for variations in each device that occur in the manufacturing stage.
Japanese Patent Laid-Open No. 5-34371 JP-A-10-70286 Technical Survey Report No. 3 (issued by the Ministry of Economy, Trade and Industry, Industrial Technology and Environment Bureau, Technical Research Office, Manufacturing Industry Bureau, Industrial Machinery Division, March 28, 2003)

  However, device variations occurring in the manufacturing stage appear not only in the offset voltage but also in, for example, sensor sensitivity. Therefore, it is necessary to adjust the amplification factor for amplifying the output voltage of the sensor due to device variations occurring in the manufacturing stage.

  In particular, it is efficient if device variations that occur in the manufacturing stage can be discriminated based on the test results of a wafer test performed by a tester before the package and can be used effectively in subsequent processes.

  The present invention has been made to solve the above problems, and a semiconductor device having a microstructure capable of compensating for variations in a manufacturing stage using test results of a tester, and its manufacture It is an object to provide a method, a manufacturing method program thereof, and a semiconductor manufacturing apparatus.

  A semiconductor device according to the present invention includes a microstructure having a movable portion formed on a semiconductor substrate, and an amplification portion that amplifies and outputs an electrical detection signal detected based on the movement of the movable portion of the microstructure. With. The amplifying unit has an adjusting means for adjusting the characteristic value of the amplifying unit for amplifying and outputting an electrical detection signal, and a test sound wave is output to the microstructure formed on the semiconductor substrate. A wafer test is performed, and an electrical detection signal is detected by the movement of the movable part in response to the test sound wave during the wafer test, and based on the detection result and correction information corresponding to the detection result stored in advance. The characteristic value of the amplifying unit is adjusted by the adjusting means before the post-package inspection.

  Preferably, based on the electrical detection signal detected by the movement of the movable part in response to the test sound wave during the wafer test, the correspondence among a plurality of groups corresponding to the variation of the microstructure included in the test result information Into one group. The adjustment unit sets an adjustment value belonging to one corresponding group among a plurality of adjustment values provided corresponding to the plurality of groups.

  Preferably, the adjustment unit adjusts at least one of an amplification factor and an offset voltage value of the amplification unit.

Preferably, the amplifying unit further includes a plurality of amplifiers,
At least one adjustment value of the plurality of amplifiers is adjusted to an adjustment value corresponding to one group classified by the adjustment means.

  In particular, the adjusting means includes a plurality of pads provided on the semiconductor substrate, and a plurality of resistive elements each provided between the plurality of pads and electrically coupled to the plurality of pads. Two pads of the plurality of pads are selected, and the characteristic value of the amplifying unit is adjusted based on the resistance value of the resistance element provided between the two pads.

  In particular, the adjustment means includes a storage unit for storing adjustment data for determining the characteristic value of the amplification unit. Based on the electrical detection signal detected by the movement of the movable part in response to the test sound wave and the correction information corresponding to the detection result stored in advance, adjustment data for determining the characteristic value of the amplification part is determined and stored. Stored in the department.

The adjusting means readjusts the characteristic value of the amplifying unit based on the result of the post-package inspection.
Preferably, the semiconductor device corresponds to any one of a semiconductor acceleration sensor, a semiconductor pressure sensor, and a semiconductor angular velocity sensor.

  A method for manufacturing a semiconductor device according to the present invention, comprising: a microstructure having a movable portion formed on a substrate; and an amplifying portion for amplifying a detection signal detected based on the movement of the movable portion of the microstructure. A method of manufacturing a semiconductor device including a step of executing a wafer test in which a test sound wave is output to a microstructure formed on a semiconductor substrate before packaging, and responding to the test sound wave by executing the wafer test The characteristic value of the amplifying unit is adjusted before the post-package inspection based on the step of detecting the electrical detection signal by the movement of the movable part and the detection information of the detection signal and the correction information corresponding to the detection result stored in advance. And a step of performing.

  Preferably, the method further includes the step of readjusting the characteristic value of the amplification unit based on the result of the post-package inspection.

  A semiconductor device manufacturing method program according to the present invention causes a computer to execute the semiconductor device manufacturing method described above.

  A semiconductor manufacturing apparatus according to the present invention includes a microstructure having a movable portion formed on a semiconductor substrate, and an amplification for amplifying and outputting an electrical detection signal detected based on the movement of the movable portion of the microstructure. A semiconductor manufacturing apparatus for manufacturing a semiconductor device having an adjusting means for adjusting a characteristic value of the amplifier for amplifying and outputting an electrical detection signal, the semiconductor substrate A wafer test in which a test sound wave is output is performed on the microstructure formed on the substrate, and an electrical detection signal is detected by the movement of the movable part in response to the test sound wave during the wafer test. Based on the correction information corresponding to the detection result stored in advance, the adjusting means is controlled so as to adjust the characteristic value of the amplifying unit before the post-package inspection.

  Preferably, the adjusting means includes a plurality of pads provided on the semiconductor substrate, and a plurality of resistance elements each provided between the plurality of pads and electrically coupled to the plurality of pads. Two pads of the plurality of pads are selected so as to adjust the characteristic value of the amplification unit based on the resistance value of the resistance element provided between the two pads by wire bonding.

  Preferably, the adjustment means includes a storage unit for storing adjustment data for determining the characteristic value of the amplification unit, and is stored in advance as an electrical detection signal detected by the movement of the movable unit in response to the test sound wave. Based on the correction information corresponding to the detection result, adjustment data for determining the characteristic value of the amplifying unit is determined and instructed to be stored in the storage unit of the adjusting unit.

  The semiconductor device, the manufacturing method thereof, the manufacturing method program thereof, and the semiconductor manufacturing device according to the present invention detect the electrical detection signal by the movement of the movable part in response to the test sound wave during the wafer test, and store the detection result in advance. Based on the correction information corresponding to the detected result, the characteristic value is adjusted by the adjusting means for adjusting the characteristic value of the amplifier before the post-package inspection.

  As a result, in the pre-shipment inspection process after packaging, coarse adjustment can be performed in advance so that the output is not saturated at the time of the inspection, so that the inspection time and correction time during the pre-shipment inspection are shortened.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals and description thereof will not be repeated.

(Embodiment 1)
FIG. 1 is a diagram illustrating a part of the processing steps of the semiconductor device according to the first embodiment of the present invention.

  Here, a flow of processing a semiconductor silicon wafer 10 (hereinafter also simply referred to as a wafer) is shown.

  Referring to FIG. 1, it is assumed that a plurality of chips having a microstructure are formed on wafer 10 although not shown. And it is conveyed to the tester 1 and a wafer test is executed. And it is conveyed by the dicing part 50 next and a dicing process is performed. Specifically, a plurality of chips formed on the wafer are cut for each chip by a dicing saw. Then, it is conveyed to the bonder 60. In the bonder 60, for each chip, a bonding process for connecting the substrate-side lead electrode and the bonding pad formed on the chip is executed.

  Although not shown, a chip encapsulation or sealing process (also referred to as a packaging process) is performed in a later process. As will be described later, test information which is a wafer test result in the tester 1 is transmitted to the bonder 60.

FIG. 2 is a flowchart illustrating the processing flow of FIG.
As shown in FIG. 2, the wafer test process is executed by the tester 1 described above (step SP0). Next, the dicing process (step SP1) is performed by the dicing 50. Next, a bonding process such as wire bonding is performed by the bonder 60 (step SP2). Then, after bonding is performed, a packaging process is performed (step SP3). Then, after the packaging process, a pre-shipment inspection process for testing a finished product before shipment is performed (step SP4).

  In this example, a method for correcting device variations in the manufacturing stage based on the test result of the wafer test in the tester 1 will be described. Specifically, a method for adjusting the output voltage of the device by referring to the correction information corresponding to the test result from the test result detected during the wafer test will be described.

First, tester 1 according to the first embodiment of the present invention will be described.
FIG. 3 is a schematic configuration diagram for explaining the microstructure tester 1 according to the first embodiment of the present invention.

  Referring to FIG. 3, here, a plurality of testers (inspection apparatus) 1 according to the first embodiment of the present invention and a microstructure sensor chip TP (hereinafter also simply referred to as a chip) having a minute movable part are formed. A substrate (wafer) 10 is shown.

  In this example, a multi-axis triaxial acceleration sensor will be described as an example of a microstructure to be tested.

  The tester 1 includes a speaker 2 that outputs sound waves that are dense waves, an input / output interface 15 for executing input / output data exchange between the outside and the inside of the tester, and a control unit 20 that controls the entire tester 1. In response to an instruction from the control unit 20 and a probe needle 4 used for contact with the test object, a measurement unit 25 for detecting a measurement value for evaluating the characteristic of the test object via the probe needle 4 A speaker control unit 30 that controls the speaker 2, a microphone (microphone) 3 that detects external sound, and a sound wave detected by the microphone 3 is converted into a voltage signal, which is further amplified and output to the control unit 20 A signal adjustment unit 35 and a storage unit 40 that stores various programs and information for evaluating the characteristics of the test object are provided. The microphone 3 can be arranged near the test object.

  Before describing the tester inspection according to the first embodiment of the present invention, first, a microstructure triaxial acceleration sensor as a test object will be described. Here, only the sensor unit that outputs the detection voltage of the sensor will be described, and the amplification unit that amplifies the detection voltage detected from the subsequent sensor will be described later.

FIG. 4 is a view of the triaxial acceleration sensor as viewed from the top surface of the device.
As shown in FIG. 4, the chip TP formed on the substrate 10 has a plurality of electrode pads PD arranged in the periphery thereof. Metal wiring is provided to transmit an electric signal to or from the electrode pad. And in the center part, the four heavy cone AR which forms a clover type | mold is arrange | positioned.

FIG. 5 is a schematic diagram of a three-axis acceleration sensor.
Referring to FIG. 5, the three-axis acceleration sensor is a piezoresistive type, and a piezoresistive element as a detection element is provided as a diffused resistor. This piezoresistive acceleration sensor can use an inexpensive IC process and is advantageous in miniaturization and cost reduction because the sensitivity does not decrease even if the resistance element as a detection element is formed small.

  As a specific configuration, the central heavy cone AR is supported by four beams BM. The beam BM is formed so as to be orthogonal to each other in the X-axis and Y-axis directions, and includes four piezoresistive elements per axis. Four piezoresistive elements for detecting the Z-axis direction are arranged beside the piezoresistive elements for detecting the X-axis direction. The top surface shape of the heavy cone AR forms a crowbar shape and is connected to the beam BM at the center. By adopting this crowbar type structure, the heavy cone AR can be enlarged and the beam length can be increased at the same time, so that a highly sensitive acceleration sensor can be realized even if it is small.

  The principle of operation of this piezoresistive three-axis acceleration sensor is that when the heavy cone receives acceleration (inertial force), the beam BM is deformed and acceleration is caused by a change in the resistance value of the piezoresistive element formed on the surface. It is a mechanism to detect. And this sensor output is set to the structure taken out from the output of the Wheatstone bridge mentioned later incorporated in each 3 axis | shaft independently.

  FIG. 6 is a conceptual diagram for explaining the deformation of the heavy cone and the beam when the acceleration in each axial direction is received.

  As shown in FIG. 6, the piezoresistive element has a property that its resistance value changes due to applied strain (piezoresistive effect). In the case of tensile strain, the resistance value increases, and in the case of compressive strain, The resistance value decreases. In this example, X-axis direction detecting piezoresistive elements Rx1 to Rx4, Y-axis direction detecting piezoresistive elements Ry1 to Ry4, and Z-axis direction detecting piezoresistive elements Rz1 to Rz4 are shown as examples.

FIG. 7 is a circuit configuration diagram of a Wheatstone bridge provided for each axis.
FIG. 7A is a circuit configuration diagram of the Wheatstone bridge in the X (Y) axis. The output voltages of the X axis and the Y axis are Vxout and Vyout, respectively.

  FIG. 7B is a circuit configuration diagram of the Wheatstone bridge in the Z axis. The output voltage of the Z axis is Vzout.

  As described above, the resistance values of the four piezoresistive elements on each axis change due to the applied strain. Based on this change, each piezoresistive element outputs, for example, an output of a circuit formed by a Wheatstone bridge on the X axis and Y axis. The acceleration component of each axis is detected as an independently separated output voltage. It is to be noted that the above-described metal wiring as shown in FIG. 4 is connected so that the above circuit is configured, and the output voltage for each axis is detected from a predetermined electrode pad.

  In addition, since this triaxial acceleration sensor can detect the DC component of acceleration, it can also be used as an inclination angle sensor for detecting gravitational acceleration.

FIG. 8 is a diagram for explaining the output response to the tilt angle of the triaxial acceleration sensor.
As shown in FIG. 8, the sensor is rotated around the X, Y, and Z axes, and the bridge output of each of the X, Y, and Z axes is measured with a digital voltmeter. As a power source for the sensor, a low voltage power source + 5V is used. Each measurement point shown in FIG. 8 is plotted with a value obtained by arithmetically subtracting the zero point offset of each axis output.

FIG. 9 is a diagram for explaining the relationship between gravitational acceleration (input) and sensor output.
The input / output relationship shown in FIG. 9 is obtained by calculating the gravitational acceleration components related to the X, Y, and Z axes from the cosine of the inclination angle of FIG. The linearity of the input / output is evaluated. That is, the relationship between acceleration and output voltage is almost linear.

FIG. 10 is a diagram for explaining the frequency characteristics of the three-axis acceleration sensor.
As shown in FIG. 10, the frequency characteristics of the sensor output for each of the X, Y, and Z axes are flat frequency characteristics up to about 200 Hz for all three axes, for example, 602 Hz for the X axis and 600 Hz for the Y axis. The Z axis resonates at 883 Hz.

  Referring to FIG. 3 again, the inspection of the tester according to the first embodiment of the present invention is performed by outputting a sound wave that is a sparse wave to the triaxial acceleration sensor that is a microstructure, and the microstructure based on the sound wave. This is a method of detecting the movement of the movable part and evaluating its characteristics.

  The microstructure inspection method according to the first embodiment of the present invention will be described with reference to the flowchart of FIG.

  Referring to FIG. 11, the inspection (test) of the microstructure is first started (step S0). Next, the probe needle 4 is brought into contact with the electrode pad PD of the detection chip TP (step S1). Specifically, the probe needle 4 is brought into contact with a predetermined electrode pad PD in order to detect the output voltage of the Wheatstone bridge circuit described in FIG. In the configuration of FIG. 1, a configuration using a single set of probe needles 4 is shown, but a configuration using a plurality of sets of probe needles is also possible. Output signals can be detected in parallel by using a plurality of sets of probe needles.

  Next, a test sound wave output from the speaker 2 is set (step S2a). Specifically, the control unit 20 receives input of external input data via the input / output interface 15. Then, the control unit 20 controls the speaker control unit 30 and instructs the speaker control unit 30 to output a test sound wave having a desired frequency and a desired sound pressure from the speaker 2 based on the input data. Next, a test sound wave is output from the speaker 2 to the detection chip TP (step S2b).

  Next, a test sound wave applied from the speaker 2 to the detection chip TP is detected using the microphone 3 (step S3). The test sound wave detected by the microphone 3 is converted and amplified into a voltage signal by the signal adjustment unit 35 and output to the control unit 20.

  Next, the control unit 20 analyzes and determines the voltage signal input from the signal adjustment unit 35, and determines whether or not a desired test sound wave has arrived (step S4).

  In step S4, when it determines with it being a desired test sound wave, the control part 20 progresses to the following step S5 and measures the characteristic value of a detection chip. Specifically, the characteristic value is measured by the measurement unit 25 based on the electrical signal transmitted through the probe needle 4 (step S5).

  Specifically, the movable part of the microstructure of the detection chip is moved by the arrival of the test sound wave that is a dense wave output from the speaker 2, that is, by air vibration. It is possible to measure an output voltage, which is an electrical detection signal, via the probe needle 4 with respect to a change in the resistance value of the triaxial acceleration sensor that is a microstructure that changes based on this movement.

  On the other hand, if it is determined in step S4 that it is not the desired test sound wave, the process returns to step S2 again to reset the test sound wave. At that time, the control unit 20 instructs the speaker control unit 30 to correct the test sound wave to the speaker control unit 30. The speaker control unit 30 performs control to finely adjust the frequency and / or sound pressure so as to obtain a desired test sound wave in response to an instruction from the control unit 20 and output the desired test sound wave from the speaker 2. In this example, a method of detecting a test sound wave and correcting it to a desired test sound wave is described. However, when the desired test sound wave reaches the microstructure of the detection chip in advance, the test is particularly performed. It is also possible to employ a configuration in which a sound wave correcting means and a method for correcting the test sound wave are not provided. Specifically, the processes from step S2a to S4 are executed in advance before the test is started, and the speaker control unit 30 stores a corrected control value for outputting a desired test sound wave. Then, when testing the actual microstructure, the speaker control unit 30 controls the input to the speaker 2 with the recorded control value, thereby omitting the processes of steps S3 and S4 during the test. Is also possible.

  Next, the control unit 20 determines whether or not the measured characteristic value, that is, measurement data is within an allowable range (step S6). If it is determined in step S6 that the value is within the allowable range, the data is passed (step S7), and data is output and stored (step S8). Then, the process proceeds to step S9. In the first embodiment of the present invention, the control unit 20 detects the frequency response characteristics of the three-axis acceleration sensor by inputting the test sound wave output from the speaker 2 as the determination of the allowable range, and the chip is appropriate. Determine if it has the characteristics. Note that the data is stored in the storage unit 40 provided in the tester 1 based on an instruction from the control unit 20. The storage unit 40 also stores test information for evaluating or determining device characteristics based on measurement data for chips included in the allowable range, as well as information on the allowable range. Note that the test information includes correction information corresponding to measurement data for adjusting a characteristic value of an amplification unit, which is a subsequent circuit, as will be described later.

  In step S9, when there is no chip to be inspected next, the inspection (test) of the microstructure is finished (step S10).

  On the other hand, if there is a further chip to be inspected in step S9, the process returns to the first step S1 and the above-described inspection is executed again.

  Here, in Step S6, when it is determined that the measured characteristic value, that is, measurement data is not within the allowable range, the control unit 20 determines that the measurement is not acceptable (Step S11) and re-inspects (Step S12). Specifically, the chip determined to be out of the allowable range by re-inspection can be removed. Alternatively, even chips that are determined to be outside the allowable range can be divided into a plurality of groups. That is, even if the chip cannot be cleared under strict test conditions, there may be many chips that do not have a problem even if they are actually shipped by performing repair and correction. Therefore, it is possible to sort the chips by executing the grouping by reinspection or the like and ship based on the sorting result.

  In this example, as an example, a configuration has been described in which a change in the resistance value of a piezoresistive element provided in the triaxial acceleration sensor is detected and determined in response to the movement of the triaxial acceleration sensor. In particular, it is not limited to resistance elements, and it is configured to detect and judge changes in impedance values such as capacitive elements and reactance elements, or changes in voltage, current, frequency, phase difference, delay time, position, etc. based on changes in impedance values. Is also possible.

  FIG. 12 is a diagram for explaining the frequency response of the three-axis acceleration sensor that responds to the test sound wave output from the speaker 2.

  FIG. 12 shows the output voltage output from the triaxial acceleration sensor when a test sound wave of 1 Pa (Pascal) is applied as the sound pressure and the frequency is changed. The vertical axis indicates the output voltage amplitude (mV) of the triaxial acceleration sensor, and the horizontal axis indicates the frequency (Hz) of the test sound wave.

  Here, an output voltage obtained particularly in the X-axis direction is shown. In this example, only the X axis is shown, but similarly, the same frequency characteristic can be obtained for the Y axis and the Z axis, so that the characteristics of the acceleration sensor can be evaluated for each of the three axes. .

  Next, when the wafer test according to the test sound wave according to the first embodiment of the present invention described above is executed, the characteristics of the device are evaluated or determined based on the measurement data for the chip determined to be within the allowable range. The method will be described.

Here, as an example, determination of variation in sensor sensitivity of a device will be described.
FIG. 13 is a diagram illustrating determination of variation in sensor sensitivity of a device based on the test result of the tester 1 according to the first embodiment of the present invention.

  Here, a method of classifying according to the detected voltage r detected from the actual device when the reference value of the detected voltage detected according to the test sound wave of the tester 1 is S0 (ideal detected voltage value) is shown. ing. Specifically, it is grouped every 0.1S0 in the range of 0.5S0 to 1.5S0. For example, if r <0.5S0, the group 1 is assumed. In addition, in the case of 0.5S0 ≦ r <0.6S0, it is set as group 2. According to the same method, if 1.4S0 ≦ r <1.5S0, the group is 11. If r ≧ 1.5S0, the group 12 is assumed. These pieces of information are stored in the storage unit 40 of the tester 1 and are read under the instruction of the control unit 20 to execute classification determination.

  And based on this classification judgment, the characteristic value of the amplification part mentioned later, specifically, an amplification factor is adjusted.

  Here, each group corresponds to an amplification value A0 (= 10S0) within a range of approximately ± 10% with reference to the amplification factor 10 times (× 10) of group 6 in the case of 0.9S0 ≦ r <1.0S0. The detection voltage is adjusted so as to be amplified.

  For example, in the case of group 2, the amplification factor is set to 18 times (× 18). In the case of group 3, the amplification factor is set to 15 times (× 15). In the case of the group 11, the amplification factor is set to 7 times (× 7). Thus, the sensor sensitivity in each device can be corrected by adjusting the amplification factor of the amplifier corresponding to the variation in the detection voltage detected from the device.

  In the case of group 1 or group 12, the detection voltage is too low or too high, that is, the sensor sensitivity is too low or too high, so that it is not suitable for the sensor, that is, it is rejected as out of the allowable range.

  In this example, the test result in the tester 1 is output to the bonder 60 as test result information. Specifically, for example, adjustment data related to the amplification factor for adjusting the sensor sensitivity is output as correction information for adjusting the characteristic value of the amplification unit.

FIG. 14 is a diagram illustrating an amplifying unit of the acceleration sensor according to the first embodiment of the present invention.
Referring to FIG. 14, here, sensor unit SN according to the first embodiment of the present invention shown in the circuit configuration of the Wheatstone bridge described in FIG. 7 and an amplification unit that amplifies the output result of sensor unit SN are shown. ing.

  As for sensor unit SN, as described with reference to FIG. 7, a Wheatstone bridge is formed for each axis (X, Y, Z), and an output voltage is detected from sensor unit SN according to the movement of the movable unit. For example, here, a case where the output voltage detected for one axis is amplified is shown.

  The amplifying unit includes a plurality of multi-stage amplifiers connected in series. Specifically, in this example, two-stage amplifiers 100 and 300 are shown. The amplifying unit further includes an offset voltage adjusting unit 200 that adjusts an offset voltage with respect to the amplifier 100. In this example, a case where the amplification factor of the amplifier 100 is adjusted will be described as an example. Here, the amplifier 100 is a so-called instrumentation amplifier.

  The amplifier 100 includes comparators 110 to 112, resistance elements 101 to 106, and a resistance adjustment unit 120. The comparators 110 and 111 constitute a non-inverting amplification stage, and the comparator 112 constitutes a difference image amplification stage.

  Comparator 110 compares the input voltages transmitted to node N0 and node N1, and transmits the result to node N2. Resistive element 103 is electrically coupled between nodes N2 and N1. Resistance adjustment unit 120 is electrically coupled between nodes N1 and N5. Resistive element 104 is electrically coupled between nodes N5 and N7. Comparator 111 compares the input voltages transmitted to node N5 and node N6, and transmits the result to node N7. Resistive element 101 is electrically coupled between nodes N2 and N3. Resistive element 105 is electrically coupled between nodes N7 and N8. Comparator 112 compares the input voltages transmitted to node N3 and node N8, and transmits the result to node N4. Resistive element 102 is electrically coupled between nodes N3 and N4. Resistive element 106 is electrically coupled between nodes N8 and N9.

  The resistance adjustment unit 120 can adjust the resistance value, and the gains (amplification factors) of the comparators 110 and 111 are adjusted based on the adjustment of the resistance value. Specifically, as the resistance value is increased from the reference resistance value serving as a reference, the load applied to the nodes N1 and N5 increases, so that the gain (amplification factor) decreases, and conversely, the resistance from the reference resistance value serving as the reference decreases. The lower the value, the lower the load applied to the nodes N1 and N5, so that the gain (amplification factor) increases.

Offset voltage adjustment unit 200 includes a comparator 210 and a voltage adjustment unit 220.
Comparator 210 compares the input voltages transmitted to node N10 and node N11, and transmits the result to node N9. The comparator 210 is a so-called voltage follower in which the output node N9 and the input node 10 are electrically coupled, and the same voltage is transmitted to the node N9 following the voltage transmitted to the node N11.

  As will be described later, voltage adjusting unit 220 is resistance-divided by a resistance element provided between power supply voltage Vdd and ground voltage GND, and adjusts the voltage associated with the resistance division according to the connection position of the resistance element connected to node N11. Is possible.

  The offset voltage is adjusted by adjusting the connection position of the resistance element in the voltage adjusting unit 220.

  The amplifier 300 receives the amplified output signal of the amplifier 100 and a predetermined reference voltage signal Vref and further amplifies the amplified output signal with a set amplification factor and outputs the amplified output signal. Although simply described here, the amplifier 300 has the same configuration as that of the amplifier 100, and the gain can be adjusted by adjusting the resistance value of the resistance adjusting unit. The offset voltage adjusting unit 200 that adjusts the offset voltage is provided for the first-stage amplifier 100, but may be provided for the subsequent-stage amplifier 300.

  In general, in the case of an amplifier having a multi-stage configuration, each amplifier in each stage can be adjusted independently. Here, the adjustment of the amplifier 100 in the front stage is described. It is also possible to adjust the amplification factor of 300.

FIG. 15 is a diagram illustrating adjustment of the amplification factor according to the first embodiment of the present invention.
In the first embodiment of the present invention, as an example, a case will be described in which the bonder 60 described above receives input of test result information of the tester 1 and executes wire bonding based on the input. In this example, a method for compensating for variations in sensor sensitivity at the manufacturing stage based on correction data included in a test inspection result according to a test sound wave according to the first embodiment of the present invention will be described.

  Referring to FIG. 15, here, a sensor chip TP and two amplification chips AMTP and ANTP # constituting an amplification unit are mounted on a semiconductor substrate 1000. In the bonder 60, wiring connections between the chips are executed. Here, the connection between the sensor chip TP and the amplification chip ANTP will be mainly described.

  In chip TP according to the first embodiment of the present invention, a plurality of resistance elements are provided in a pad region around sensor portion SN. Each of the plurality of resistance elements is electrically coupled between the plurality of pads.

  In this example, in the chip TP, a plurality of resistance elements constituting the resistance adjustment unit 120 and a plurality of resistance elements constituting the voltage adjustment unit 220 are provided. The resistance adjustment unit 120 includes resistance elements Ra0 to RaN-1, and each resistance element is provided between the pads PDa0 to PDaN, respectively. Voltage adjusting unit 220 includes a plurality of resistance elements Rb0 to RbM-1, and each resistance element is provided between pads PDb0 to PDbM, respectively.

  Then, two pads PDa that are respectively electrically coupled to the node N1 and the node N5 are selected from a plurality of pads by wire bonding. Thereby, the resistance value between the node N1 and the node 5 is adjusted. For example, in this example, node N1 and pad PDa0 are electrically coupled. Node N5 and pad PDa2 are electrically coupled. As a result, the resistors Ra0 and Ra1 are connected in series between the node N1 and the node N5.

  Therefore, by such wire bonding, two pads PDa are selected from the plurality of pads PDa and electrically coupled to adjust the number of resistance elements connected between the nodes N1 and N5. And the resistance value of the resistance element in the meantime can be adjusted. As a result, as described above, for example, the amplification factor can be adjusted by adjusting the resistance value from the reference resistance value serving as a reference, and the value of the output signal after amplification can be adjusted.

  The bonder 60 receives input of the above test result information in wire bonding, and determines the connection relationship so that the amplification factor of the corresponding group is obtained according to the grouping in the tester 1 in order to adjust the amplification factor of the amplifier 100. Then, a pad to be bonded is selected from the plurality of pads PDa. Although not shown, the bonder 60 has a storage unit for storing an adjustment program for adjusting the bonding position and various control programs in order to adjust the amplification factor in response to the input of the test result information from the tester 1. It shall have. This makes it possible to make adjustments at a very low cost compared to a method of correcting by recording a correction value in the ROM or a method of correcting by changing the resistance value of the resistor by laser trimming.

  In addition, by adopting this method, adjustments are made before packaging, so in the pre-shipment inspection process after packaging, it can be set so that the output does not saturate at the time of the inspection. Time and correction time are shortened.

  Further, as described above, the plurality of resistance elements Rb0 to RbM-1 configuring the voltage adjustment unit 220 are also configured on the chip TP and provided between the pads PDb0 to PDbM, respectively. Here, pad PDb0 is electrically coupled to power supply voltage Vdd. Pad PDbM is electrically coupled to ground voltage GND. Therefore, a plurality of resistance elements are connected in series between power supply voltage Vdd and ground voltage GND, and the voltage value output from each pad PDb can be adjusted by resistance division. Therefore, a desired voltage value according to the resistance division is supplied to the input node of the comparator 210 by changing the position of the pad PDb connected to the node N11. As described above, since comparator 210 is a voltage follower, a desired voltage value according to this resistance division is transmitted to node N9 and output to amplifier 100 as an offset voltage value. Thereby, the offset voltage value included in the characteristic value of the amplifier 100 can be adjusted by a simple method. In this example, for example, when the power supply voltage Vdd is 5 V, 2.5 V is set as a reference offset voltage value (hereinafter also referred to as an offset reference value).

  FIG. 16 is a diagram illustrating the classification of offset voltage correction values according to the first embodiment of the present invention.

  Here, the offset voltage correction value is subdivided into groups 1 to 42, and the offset voltage correction value (adjustment value) of the amplifier is determined based on them. Here, the case where it classify | categorizes for every 1 mV within the range of -20mV-20mV on the basis of an offset reference value is shown. As the offset voltage correction value, a value obtained by adding the offset voltage correction value as the correction value to the detection voltage detected for the offset is approximately within the range of −0.5 mV to 0.5 mV with respect to the offset reference value. It has been decided to fit. As a result, the offset can be substantially canceled and amplification in a highly accurate amplifier becomes possible.

  For example, regarding the detection voltage q, the case of q <−20 mV is set as group 1. A group 2 is defined as −20 mV ≦ q <−19 mV. According to the same method, a group 41 is set when 19 mV ≦ q <20 mV. Further, a group 42 is set when q ≧ 20 mV. Then, the offset voltage is determined according to this grouping. For example, in the case of corresponding to group 2, the offset voltage correction value is set to +19.5 mV. In the case of group 3, the offset voltage correction value is set to + 18.5V. In the case of the group 1 or the group 42, the offset voltage correction value is excessively large in the positive and negative, and thus is judged as defective. These pieces of information are stored in the storage unit 40 of the tester 1 and are read under the instruction of the control unit 20 to execute classification determination.

  In the first embodiment of the present invention, the tester 1 calculates the detection voltage q, determines an offset voltage correction value determined based on the classification result, and outputs the test result information to the bonder 60. The bonder 60 receives the offset voltage correction value, and electrically couples the predetermined pad PDb and the node N11 by the voltage adjustment unit 220 so as to obtain a desired offset voltage by wire bonding. The detection voltage q corresponds to a value obtained by subtracting the offset reference value from the output reference value output from the chip TP.

Here, the output reference value of the chip TP will be described.
FIG. 17 is a diagram for explaining an output result from the chip TP.

  In the tester 1 described above, when a test sound wave is input to the device, an output voltage is detected via the probe needle.

  The waveform shown in FIG. 17 is a waveform diagram of the output voltage detected by plotting the output voltage measured in a predetermined sampling period in a certain measurement section.

  As shown here, the output result from the chip TP is a voltage signal waveform that swings around an output reference value serving as a reference. Therefore, it is possible to easily measure the output reference value as a reference by obtaining an average value in a certain measurement section.

  In the above-described sensor sensitivity inspection, as an example, the maximum output voltage in a certain measurement section is used as the detection voltage.

  Therefore, according to the test method according to the first embodiment of the present invention, it is not necessary to separately perform the characteristic inspection for the sensor sensitivity and the offset voltage, and amplification that is the characteristic value of the amplifier simply and at high speed from the measurement data according to one test. The rate and offset voltage can be adjusted in parallel.

  Note that a program that causes a computer to execute the classification method of at least one of the sensor sensitivity and the offset voltage correction value according to the first embodiment of the present invention described above is stored in advance in a storage medium such as an FD, a CD-ROM, or a hard disk. It is also possible to leave.

  In this case, the tester 1 is provided with a driver device that reads the program stored in the recording medium, and the control unit 20 in the tester 1 receives the program via the driver device to determine the allowable range described above. It is also possible to execute. Furthermore, when connected to a network, the program can be downloaded from a server.

(Embodiment 2)
In the above-described first embodiment, the method of adjusting the sensor characteristics by wire bonding based on the test result information in the tester 1 in the bonder 60 has been mainly described. However, in the second embodiment of the present invention, A method of adjusting the sensor characteristics according to another method will be described.

  FIG. 18 is a diagram illustrating the amplification unit of the acceleration sensor according to the second embodiment of the present invention and the adjustment of the amplification factor.

  Referring to FIG. 18, the amplifying unit of the acceleration sensor according to the second embodiment of the present invention is configured by a so-called programmable amplifier (PGA).

  Specifically, the sensor chip TP # configured by the sensor unit SN described above and the amplification chip APTP configured by the programmable amplifier 400 and the storage unit 450 are placed on the semiconductor substrate 1001 and are connected between the chips. Wire connection is performed. In this example, as an example, the storage unit 450 is configured by an EEPROM, which is a flash memory capable of storing nonvolatile data. However, the present invention is not limited to this, and other memories may be used. It is.

  The program amplifier 400 can adjust the characteristics of the amplifier based on the data stored in the storage unit 450.

In the second embodiment of the present invention, a method for adjusting the characteristics of the sensor will be described.
In the second embodiment of the present invention, a wafer test is performed in the tester 1 according to the same method as described in the first embodiment. Then, the test result information of the tester 1 is output to the ROM data writing device 45.

  Based on the test result information from the tester 1, the ROM data writing device 45 writes data for determining the characteristics of the amplifier into the storage unit 450 via a ROM interface (I / F) (not shown).

  Thereby, for example, the amplification factor adjustment data for adjusting the amplification factor included in the characteristics of the amplifier is written in the storage unit 450 to adjust the amplification factor of the program amplifier 400, thereby adjusting the value of the output signal after amplification. it can. Along with this, since adjustment is performed before packaging, in the pre-shipment inspection process after packaging, it is possible to set so that the output is not saturated at the time of the inspection, so the inspection time and correction time during the pre-shipment inspection are short. Become.

  Here, as a characteristic of the amplifier, the case where the gain adjustment data for adjusting the gain is written in the storage unit 450 using the ROM data writing device 45 is described, but the present invention is not limited to the gain adjustment data. For example, an offset correction value is calculated according to the method described in the first embodiment, and is given to the ROM data writing device 45 as test result information, so that the offset adjustment data is written in the storage unit 450 and included in the amplifier characteristics. It is also possible to adjust.

  Here, since the amplification unit according to the second embodiment of the present invention is a programmable amplifier, it is not necessary to adjust the amplification factor according to the wire bonding of the bonder in the first embodiment. In the following description, a case where readjustment is performed in the pre-shipment inspection process after packaging will be described.

  FIG. 19 is a diagram illustrating a process flow for adjusting the characteristics of the amplification unit according to the second embodiment of the present invention.

  Referring to FIG. 19, here, a method of adjusting using test result information of a tester before and after packaging is shown.

  Here, before packaging, a configuration similar to that described in FIG. 18 is shown. As shown here, test result information in the tester 1 is input to the ROM data writing device 45, and the ROM data writing device 45 writes the coarse adjustment data in the storage unit 450. For example, here, the amplification factor is roughly adjusted so that the detection output is not saturated.

  Here, after packaging, a case where inspection is performed by the finished product test apparatus 2 in the inspection process before shipping is shown. The finished product test apparatus 2 also has a storage unit similar to the tester 1 for executing the classification determination described in FIG. The finished product test apparatus 2 performs a final test on a packaged device before shipment. For example, in an acceleration sensor, desired characteristics can be obtained by applying vibration using a vibrator or the like. Various tests such as detection are performed.

  Further, as described in the first embodiment, the finished product test apparatus 2 performs the classification determination similar to that in FIG. 13 on the variation in the sensor sensitivity of the device based on the detection voltage, and determines the amplification factor. Then, the test result information is output to the ROM data writing device 45 #. The ROM data writing device 45 # writes the final adjustment data in the storage unit 450 based on the test result information. That is, ROM data writing device 45 # re-adjusts the amplification factor of the device after packaging based on the test result information.

  Therefore, according to the method, for example, using the test result information of the wafer test, the characteristics of the amplifying unit are first roughly adjusted, and then the desired amplification is performed by readjustment based on the inspection result of the pre-shipment inspection process to be executed later It is possible to shorten the inspection time and the correction time by adjusting the rate.

(Modification of Embodiment 2)
FIG. 20 is a diagram illustrating a flow of processing for adjusting the characteristics of the amplification unit according to the modification of the second embodiment of the present invention.

  Referring to FIG. 20, the difference in the adjustment process of the amplification unit described with reference to FIG. 19 is that data is written by the same ROM data writing device 45 both before and after packaging.

  With this device, it is not necessary to provide a separate ROM data writing device, and the system is simplified. In particular, as shown in FIG. 19, the finished product test apparatus 2 and the ROM data writing device can be provided separately. However, as shown in this example, the finished product test apparatus 2 # is provided with the finished product test apparatus 2 #. The ROM data writing device 45 can be provided as a single device. This improves the installation efficiency and also improves the controllability.

  In the above embodiment, the chip CP formed for the acceleration sensor has been described. However, the present invention is not limited to the acceleration sensor, and can be applied to a MEMS device having other movable parts.

  FIG. 21 is a diagram illustrating a microphone as an example of a capacitance detection sensor element.

  Referring to FIG. 21A, a microphone 70 includes a substrate 80, an oxide film 81 formed on the substrate 80, and a diaphragm 71 (an extension extending from the diaphragm to the outside) formed on the oxide film 81. Including a portion 76), a fixing portion 74 provided on the vibration plate 71 and formed of an insulating material, and a back electrode 72 provided on the fixing portion 74. A space 73 is formed between the diaphragm 71 and the back electrode 72 by the fixing portion 74. The back electrode 72 is provided with a plurality of through holes as acoustic holes 75. A back electrode take-out electrode 77 is provided on the surface of the back electrode 72, and a take-out electrode 78 for the vibration plate is provided on the surface of the extension portion 76 of the vibration plate 71.

  Next, referring also to FIG. 21B, the vibration plate 71 is provided in a substantially central portion of the substrate 80 and has a rectangular shape. Here, in order to simplify the description, it will be described as a square. Four rectangular fixing portions 74 a to 74 d are provided at approximately the center of the four sides constituting the diaphragm 71, and a back electrode 72 is provided on the fixing portion 74. The back electrode 72 has an octagonal shape including four sides on the diaphragm side of the fixing portion 74 and four sides (straight lines) connecting adjacent fixing portions 74 (for example, adjacent apexes that are the shortest distance between 74a and 74b). is doing.

  Since the back electrode 72 is supported by the fixing portions 74 provided on the outer peripheral portions of the four sides of the rectangular diaphragm 71 and has a shape that connects the shortest distances between adjacent apexes of the fixing portion 74, the back electrode A mechanical strength of 72 can be secured.

  In FIG. 21B, a space is provided between the diaphragm 71 and the fixed portion 74 for easy understanding, but in reality there is almost no space.

  Further, in FIG. 21B, a back electrode take-out electrode 77 is provided on each fixed portion 74, and four vibration plate take-out electrodes 78 are provided at the four corners of the surface of the extension portion 76 of the vibration plate 71. This takes into account the yield, and there is no particular problem if there is one each.

  The diaphragm 71 vibrates in response to a pressure change (including sound) from the outside. That is, the microphone 70 functions as a capacitor with the diaphragm 71 and the back electrode 72, and electrically takes out a change in the capacitance of the capacitor when the diaphragm 71 vibrates by a sound pressure signal. Can be used.

  The detected electrical output can be amplified and output by the amplifying unit as described above.

FIG. 22 is a conceptual diagram of a piezoresistive pressure sensor.
Referring to FIG. 22A, in a piezoresistive pressure sensor 90, a diaphragm 91 is formed on a silicon substrate by anisotropic etching, and diffused piezoresistive elements 92a to 92d are arranged in the center of the end portions. is doing. The pressure is detected by using a piezoresistive effect in which stress acts on the diffusion type piezoresistive elements 92a to 92d formed on the diaphragm surface by the pressure to change the electric resistance.

  Referring to FIG. 22B, here, the piezoresistive pressure sensor 90 is a cross-sectional view taken along ID-ID #. As shown here, diffusion type piezoresistive elements 92 a and 92 c are arranged on the surface of the diaphragm 91.

  FIG. 22C is a wiring diagram when the diffusion type piezoresistive elements 92a to 92d are bridge-connected.

  Here, assuming that the resistance values of the diffusion type piezoresistive elements 92a to 92d are R1 to R4, the resistance values R1 to R4 after pressure application are expressed by the following equations.

However, R0 is a resistance value when there is no load, and α1 and α2 are products of a piezoresistance coefficient and stress.
And the ratio of the input and output voltages of the bridge is as follows.

  Therefore, the pressure can be detected by amplifying the detected electrical output by the amplification unit as described above and measuring the input / output voltage.

  In this example, a microphone or a piezoresistive pressure sensor has been described as an example. However, the present invention is not limited to this, and the present invention can be similarly applied to other MEMS devices such as an angular velocity sensor.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

It is a figure explaining a part of processing process of the semiconductor device according to the embodiment of the present invention. It is a flowchart explaining the flow of the process of FIG. It is a schematic block diagram explaining the microstructure tester 1 according to the embodiment of the present invention. It is the figure seen from the device upper surface of a 3-axis acceleration sensor. It is the schematic of a 3-axis acceleration sensor. It is a conceptual diagram explaining the deformation | transformation of the heavy cone and beam at the time of receiving the acceleration of each axial direction. It is a circuit block diagram of the Wheatstone bridge provided with respect to each axis. It is a figure explaining the output response with respect to the inclination-angle of a 3-axis acceleration sensor. It is a figure explaining the relationship between gravitational acceleration (input) and a sensor output. It is a figure explaining the frequency characteristic of a 3-axis acceleration sensor. It is a flowchart figure explaining the inspection method of the microstructure according to the embodiment of the present invention. It is a figure explaining the frequency response of the 3-axis acceleration sensor which responds to the test sound wave output from the speaker. It is a figure explaining the determination of the dispersion | variation in the sensor sensitivity of a device based on the test result of the tester 1 according to embodiment of this invention. It is a figure explaining the amplification part of the acceleration sensor according to the embodiment of the present invention. It is a figure explaining the adjustment of the gain according to embodiment of this invention. It is a figure explaining the classification | category of the offset voltage according to embodiment of this invention. It is a figure explaining the output result from chip | tip TP. It is a figure explaining the adjustment part of the amplification part of the acceleration sensor according to Embodiment 2 of this invention, and its gain. It is a figure explaining the flow of a process of adjustment of the characteristic of the amplification part according to Embodiment 2 of this invention. It is a figure explaining the flow of a process of adjustment of the characteristic of the amplification part according to the modification of Embodiment 2 of this invention. It is a figure explaining a microphone as an example of a capacity detection type sensor element. It is a conceptual diagram of a piezoresistive pressure sensor.

Explanation of symbols

  1 tester, 2 speakers, 5, 5 # finished product test device, 10 wafer, 45, 45 # ROM data writing device, 50 dicing, 60 bonder, 70 microphone, 90 piezoresistive pressure sensor, 100, 300 amplifier, 110- 112,210 Comparator, 120 Resistance adjustment unit, 200 Offset voltage adjustment unit, 220 Voltage adjustment unit, 400 PGA, 450 Storage unit, 1000,1001 Semiconductor substrate.

Claims (14)

A microstructure having a movable portion formed on a semiconductor substrate;
An amplification unit that amplifies and outputs an electrical detection signal detected based on the movement of the movable part of the microstructure,
The amplifying unit has an adjusting unit for adjusting a characteristic value of the amplifying unit for amplifying and outputting the electrical detection signal,
A wafer test in which a test sound wave is output is performed on the microstructure formed on the semiconductor substrate, and the electrical detection signal is generated by the movement of the movable part in response to the test sound wave during the wafer test. Is detected, and the characteristic value of the amplifying unit is adjusted by the adjusting means before post-package inspection based on the detection result and correction information corresponding to the detection result stored in advance. Based on the electrical detection signal detected by the movement of the movable part in response to the test sound wave during the wafer test, out of a plurality of groups corresponding to variations in the microstructure included in the test result information Into a corresponding group of
The semiconductor device according to claim 1, wherein the adjustment unit sets an adjustment value belonging to the corresponding one group among a plurality of adjustment values provided corresponding to the plurality of groups.   The semiconductor device according to claim 1, wherein the adjustment unit adjusts at least one of an amplification factor and an offset voltage value of the amplification unit. The amplifying unit further includes a plurality of amplifiers,
The semiconductor device according to claim 1, wherein at least one adjustment value of the plurality of amplifiers is adjusted to an adjustment value corresponding to one group classified by the adjustment unit. The adjusting means includes
A plurality of pads provided on the semiconductor substrate;
Each having a plurality of resistive elements provided between the plurality of pads and electrically coupled to the plurality of pads,
5. The characteristic value of the amplifying unit is adjusted based on a resistance value of a resistance element provided between the two pads, when two pads of the plurality of pads are selected. The semiconductor device according to claim 1. The adjustment means includes a storage unit for storing adjustment data for determining a characteristic value of the amplification unit,
The adjustment for determining the characteristic value of the amplification unit based on the electrical detection signal detected by the movement of the movable unit in response to the test sound wave and the correction information corresponding to the detection result stored in advance. The semiconductor device according to claim 2, wherein data is determined and stored in the storage unit.   The semiconductor device according to claim 1, wherein the adjustment unit re-adjusts the characteristic value of the amplification unit based on a result of post-package inspection.   The semiconductor device according to claim 1, wherein the semiconductor device corresponds to any one of a semiconductor acceleration sensor, a semiconductor pressure sensor, and a semiconductor angular velocity sensor. A method for manufacturing a semiconductor device, comprising: a microstructure having a movable part formed on a substrate; and an amplifying part for amplifying a detection signal detected based on the movement of the movable part of the microstructure.
Performing a wafer test in which a test sound wave is output to the microstructure formed on the semiconductor substrate before packaging;
Detecting an electrical detection signal by movement of the movable part in response to the test sound wave by performing the wafer test;
A method of manufacturing a semiconductor device, comprising: adjusting a characteristic value of the amplification unit before inspection after packaging based on a detection result of the detection signal and correction information corresponding to a detection result stored in advance.   The method for manufacturing a semiconductor device according to claim 9, further comprising a step of readjusting a characteristic value of the amplification unit based on a result of post-package inspection.   A semiconductor device manufacturing method program for causing a computer to execute the semiconductor device manufacturing method according to claim 9. A microstructure having a movable part formed on a semiconductor substrate, and an amplification part that amplifies and outputs an electrical detection signal detected based on the movement of the movable part of the microstructure, A semiconductor manufacturing apparatus for manufacturing a semiconductor device having an adjusting means for adjusting a characteristic value of the amplifying unit for amplifying and outputting the electrical detection signal,
A wafer test in which a test sound wave is output is performed on the microstructure formed on the semiconductor substrate, and the electrical detection signal is generated by the movement of the movable part in response to the test sound wave during the wafer test. Is detected, and the adjustment unit is controlled based on the detection result and the correction information corresponding to the detection result stored in advance so as to adjust the characteristic value of the amplifying unit before the post-package inspection. apparatus. The adjusting means includes
A plurality of pads provided on the semiconductor substrate;
Each having a plurality of resistive elements provided between the plurality of pads and electrically coupled to the plurality of pads,
13. The two pads of the plurality of pads are selected so as to adjust the characteristic value of the amplifying unit based on the resistance value of a resistance element provided between the two pads by wire bonding. Semiconductor manufacturing equipment. The adjustment means includes a storage unit for storing adjustment data for determining a characteristic value of the amplification unit,
The adjustment for determining the characteristic value of the amplification unit based on the electrical detection signal detected by the movement of the movable unit in response to the test sound wave and the correction information corresponding to the detection result stored in advance. The semiconductor manufacturing apparatus according to claim 12, wherein data is determined and instructed to be stored in the storage unit of the adjusting unit.

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