TW200720660A - Semiconductor device, manufacturing method of semiconductor device, manufacturing method program of semiconductor device, and semiconductor manufacturing apparatus - Google Patents

Semiconductor device, manufacturing method of semiconductor device, manufacturing method program of semiconductor device, and semiconductor manufacturing apparatus

Info

Publication number
TW200720660A
TW200720660A TW095127909A TW95127909A TW200720660A TW 200720660 A TW200720660 A TW 200720660A TW 095127909 A TW095127909 A TW 095127909A TW 95127909 A TW95127909 A TW 95127909A TW 200720660 A TW200720660 A TW 200720660A
Authority
TW
Taiwan
Prior art keywords
manufacturing
semiconductor device
semiconductor
tester
input
Prior art date
Application number
TW095127909A
Other languages
Chinese (zh)
Other versions
TWI292042B (en
Inventor
Naoki Ikeuchi
Masami Yakabe
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200720660A publication Critical patent/TW200720660A/en
Application granted granted Critical
Publication of TWI292042B publication Critical patent/TWI292042B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
    • G01P2015/0842—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass the mass being of clover leaf shape

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Micromachines (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Pressure Sensors (AREA)
  • Wire Bonding (AREA)

Abstract

To provide a semiconductor device having a fine structure capable of compensating dispersion in a manufacturing stage by using a test result by a tester, its manufacturing method, its manufacturing method program, and a semiconductor manufacturing apparatus. In the tester 1, a test sound wave is input, and an output voltage from a device in response to input of the test sound wave is detected. A bonder 60 receives a test result by the tester 1, executes classification of the device, and executes bonding and adjust to acquire an amplification factor of an amplifier corresponding to a classified group.
TW095127909A 2005-07-29 2006-07-28 Semiconductor device, manufacturing method of semiconductor device, manufacturing method program of semiconductor device, and semiconductor manufacturing apparatus TW200720660A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005221691A JP4712474B2 (en) 2005-07-29 2005-07-29 Semiconductor device, semiconductor device manufacturing method, semiconductor device manufacturing method program, and semiconductor manufacturing apparatus

Publications (2)

Publication Number Publication Date
TW200720660A true TW200720660A (en) 2007-06-01
TWI292042B TWI292042B (en) 2008-01-01

Family

ID=37683467

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095127909A TW200720660A (en) 2005-07-29 2006-07-28 Semiconductor device, manufacturing method of semiconductor device, manufacturing method program of semiconductor device, and semiconductor manufacturing apparatus

Country Status (3)

Country Link
JP (1) JP4712474B2 (en)
TW (1) TW200720660A (en)
WO (1) WO2007013580A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5325630B2 (en) * 2009-03-27 2013-10-23 株式会社東芝 Microphone device and adjusting device and adjusting method thereof
JP5511260B2 (en) * 2009-08-19 2014-06-04 キヤノン株式会社 Capacitive electromechanical transducer and sensitivity adjustment method thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3706765C3 (en) * 1987-03-03 1995-11-09 Telefunken Microelectron Impact sensor for a vehicle, with a test circuit
JPH0534371A (en) * 1991-07-31 1993-02-09 Tokai Rika Co Ltd Measuring apparatus for sensitivity of semiconductor acceleration sensor
JP3382030B2 (en) * 1994-10-14 2003-03-04 株式会社日立製作所 Full-mold mounting type acceleration sensor
JPH0933567A (en) * 1995-07-21 1997-02-07 Akebono Brake Ind Co Ltd Method and device for inspecting sensor chip of semiconductor acceleration sensor
JPH11183507A (en) * 1997-12-25 1999-07-09 Fujikura Ltd Semiconductor sensor
JP4229347B2 (en) * 1999-05-31 2009-02-25 キヤノン株式会社 Active vibration control apparatus, exposure apparatus, and device manufacturing method

Also Published As

Publication number Publication date
WO2007013580A1 (en) 2007-02-01
JP4712474B2 (en) 2011-06-29
TWI292042B (en) 2008-01-01
JP2007040704A (en) 2007-02-15

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees