TW200721461A - Single-poly non-volatile memory device - Google Patents
Single-poly non-volatile memory deviceInfo
- Publication number
- TW200721461A TW200721461A TW095100230A TW95100230A TW200721461A TW 200721461 A TW200721461 A TW 200721461A TW 095100230 A TW095100230 A TW 095100230A TW 95100230 A TW95100230 A TW 95100230A TW 200721461 A TW200721461 A TW 200721461A
- Authority
- TW
- Taiwan
- Prior art keywords
- gate
- well
- volatile memory
- poly
- memory device
- Prior art date
Links
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- 230000006870 function Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
- G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7923—Programmable transistors with more than two possible different levels of programmation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US59721005P | 2005-11-17 | 2005-11-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200721461A true TW200721461A (en) | 2007-06-01 |
TWI287868B TWI287868B (en) | 2007-10-01 |
Family
ID=38076506
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095100230A TWI287868B (en) | 2005-11-17 | 2006-01-03 | Single-poly non-volatile memory device |
TW095100665A TWI292622B (en) | 2005-11-17 | 2006-01-06 | Single-poly non-volatile memory device and its operation method |
TW095108181A TWI299866B (en) | 2005-11-17 | 2006-03-10 | Single-poly non-volatile memory device and its operation method |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095100665A TWI292622B (en) | 2005-11-17 | 2006-01-06 | Single-poly non-volatile memory device and its operation method |
TW095108181A TWI299866B (en) | 2005-11-17 | 2006-03-10 | Single-poly non-volatile memory device and its operation method |
Country Status (3)
Country | Link |
---|---|
US (4) | US20070109860A1 (zh) |
CN (3) | CN1967871A (zh) |
TW (3) | TWI287868B (zh) |
Families Citing this family (39)
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TWI287868B (en) * | 2005-11-17 | 2007-10-01 | Ememory Technology Inc | Single-poly non-volatile memory device |
TWI325165B (en) * | 2006-04-20 | 2010-05-21 | Ememory Technology Inc | Method for operating a single-poly single-transistor non-volatile memory cell |
US7391652B2 (en) * | 2006-05-05 | 2008-06-24 | Macronix International Co., Ltd. | Method of programming and erasing a p-channel BE-SONOS NAND flash memory |
JP4282702B2 (ja) * | 2006-09-22 | 2009-06-24 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US8269204B2 (en) | 2009-07-02 | 2012-09-18 | Actel Corporation | Back to back resistive random access memory cells |
TWI471915B (zh) * | 2009-07-10 | 2015-02-01 | United Microelectronics Corp | 閘極結構及其製作方法 |
US8076207B2 (en) * | 2009-07-14 | 2011-12-13 | United Microelectronics Corp. | Gate structure and method of making the same |
CN102064178B (zh) * | 2009-11-18 | 2013-07-24 | 上海华虹Nec电子有限公司 | Otp器件的单元结构及其制造方法、操作方法 |
CN102097385B (zh) * | 2009-12-15 | 2014-05-07 | 中芯国际集成电路制造(上海)有限公司 | 双位快闪存储器的制作方法 |
CN102097490A (zh) * | 2009-12-15 | 2011-06-15 | 中芯国际集成电路制造(上海)有限公司 | 双位快闪存储器的制作方法 |
CN102097383B (zh) * | 2009-12-15 | 2013-06-19 | 中芯国际集成电路制造(上海)有限公司 | 双位快闪存储器的制作方法 |
CN102104045B (zh) * | 2009-12-18 | 2013-01-09 | 上海华虹Nec电子有限公司 | P型otp器件及其制造方法 |
CN102110657A (zh) * | 2009-12-29 | 2011-06-29 | 中芯国际集成电路制造(上海)有限公司 | 双位快闪存储器的制作方法 |
CN102214693B (zh) * | 2010-04-09 | 2013-05-29 | 台湾积体电路制造股份有限公司 | 半导体装置 |
CN102623455A (zh) * | 2011-01-27 | 2012-08-01 | 北京兆易创新科技有限公司 | 一种非易失性存储单元及其制造方法 |
CN102623048A (zh) * | 2011-01-27 | 2012-08-01 | 北京兆易创新科技有限公司 | 一种非易失性存储单元及其数据编程、读取、擦除方法 |
US20120223381A1 (en) * | 2011-03-03 | 2012-09-06 | Lu Hau-Yan | Non-volatile memory structure and method for manufacturing the same |
CN102354528B (zh) * | 2011-07-13 | 2014-06-18 | 北京兆易创新科技股份有限公司 | 一种非易失性存储单元及其数据编程、读取、擦除方法 |
US8389358B2 (en) | 2011-07-22 | 2013-03-05 | United Microelectronics Corp. | Manufacturing method and structure of non-volatile memory |
CN103050444B (zh) * | 2011-10-13 | 2015-09-16 | 旺宏电子股份有限公司 | 非挥发性记忆体及其制造方法 |
US8837220B2 (en) * | 2013-01-15 | 2014-09-16 | United Microelectronics Corp. | Nonvolatile memory and manipulating method thereof |
US9287278B2 (en) * | 2013-03-01 | 2016-03-15 | Microsemi SoC Corporation | Non-volatile push-pull non-volatile memory cell having reduced operation disturb and process for manufacturing same |
JP6298240B2 (ja) * | 2013-03-22 | 2018-03-20 | サイプレス セミコンダクター コーポレーション | 半導体装置及びその消去方法 |
CN104422865B (zh) * | 2013-08-22 | 2017-06-20 | 上海东软载波微电子有限公司 | 晶圆级一次性编程otp芯片测试方法及装置 |
US9136276B1 (en) | 2014-04-18 | 2015-09-15 | United Microelectronics Corp. | Memory cell structure and method for forming the same |
US20160020143A1 (en) * | 2014-07-17 | 2016-01-21 | Macronix International Co., Ltd. | Semiconductor Devices and Fabrication Methods With Reduced Topology And Reduced Word Line Stringer Residual Material |
US9608066B1 (en) * | 2015-09-29 | 2017-03-28 | International Business Machines Corporation | High-K spacer for extension-free CMOS devices with high mobility channel materials |
US9805806B2 (en) * | 2015-10-16 | 2017-10-31 | Ememory Technology Inc. | Non-volatile memory cell and method of operating the same |
US10270451B2 (en) | 2015-12-17 | 2019-04-23 | Microsemi SoC Corporation | Low leakage ReRAM FPGA configuration cell |
CN107293594B (zh) * | 2016-04-01 | 2020-05-01 | 中芯国际集成电路制造(天津)有限公司 | 金属浮栅mtp器件及其制备方法 |
US10147485B2 (en) | 2016-09-29 | 2018-12-04 | Microsemi Soc Corp. | Circuits and methods for preventing over-programming of ReRAM-based memory cells |
WO2018106450A1 (en) | 2016-12-09 | 2018-06-14 | Microsemi Soc Corp. | Resistive random access memory cell |
CN107256721B (zh) * | 2017-07-28 | 2023-06-02 | 深圳市航顺芯片技术研发有限公司 | 多次可擦写的单层多晶硅非挥发性存储器及其存储方法 |
US10522224B2 (en) | 2017-08-11 | 2019-12-31 | Microsemi Soc Corp. | Circuitry and methods for programming resistive random access memory devices |
JP7091675B2 (ja) | 2018-01-26 | 2022-06-28 | ユナイテッド・セミコンダクター・ジャパン株式会社 | 半導体装置 |
JP7115037B2 (ja) | 2018-05-25 | 2022-08-09 | ユナイテッド・セミコンダクター・ジャパン株式会社 | 半導体装置 |
CN110739313B (zh) * | 2018-07-19 | 2022-07-19 | 合肥晶合集成电路股份有限公司 | 一种非易失性存储器单元、阵列及制备方法 |
US11404537B2 (en) * | 2020-04-17 | 2022-08-02 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor device with air-void in spacer |
US11877456B2 (en) | 2020-09-15 | 2024-01-16 | Ememory Technology Inc. | Memory cell of non-volatile memory |
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US5761126A (en) * | 1997-02-07 | 1998-06-02 | National Semiconductor Corporation | Single-poly EPROM cell that utilizes a reduced programming voltage to program the cell |
US6025625A (en) * | 1999-02-25 | 2000-02-15 | Worldwide Semiconductor Manufacturing Corporation | Single-poly EEPROM cell structure operations and array architecture |
JP2002050703A (ja) * | 2000-08-01 | 2002-02-15 | Hitachi Ltd | 多値不揮発性半導体記憶装置 |
JP4923321B2 (ja) * | 2000-09-12 | 2012-04-25 | ソニー株式会社 | 不揮発性半導体記憶装置の動作方法 |
US6555865B2 (en) * | 2001-07-10 | 2003-04-29 | Samsung Electronics Co. Ltd. | Nonvolatile semiconductor memory device with a multi-layer sidewall spacer structure and method for manufacturing the same |
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JP4601287B2 (ja) * | 2002-12-26 | 2010-12-22 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
JP2004335026A (ja) * | 2003-05-09 | 2004-11-25 | Sharp Corp | 電気的にプログラム可能でかつ電気的に消去可能な半導体記憶装置 |
JP2004348805A (ja) * | 2003-05-20 | 2004-12-09 | Sharp Corp | 半導体記憶装置 |
US6816414B1 (en) * | 2003-07-31 | 2004-11-09 | Freescale Semiconductor, Inc. | Nonvolatile memory and method of making same |
US6952369B2 (en) * | 2003-08-04 | 2005-10-04 | Ememory Technology Inc. | Method for operating a NAND-array memory module composed of P-type memory cells |
US7026692B1 (en) * | 2003-11-12 | 2006-04-11 | Xilinx, Inc. | Low voltage non-volatile memory transistor |
US6885072B1 (en) * | 2003-11-18 | 2005-04-26 | Applied Intellectual Properties Co., Ltd. | Nonvolatile memory with undercut trapping structure |
US6930002B1 (en) * | 2004-04-29 | 2005-08-16 | United Microelectronics Corp. | Method for programming single-poly EPROM at low operation voltages |
US7227234B2 (en) * | 2004-12-14 | 2007-06-05 | Tower Semiconductor Ltd. | Embedded non-volatile memory cell with charge-trapping sidewall spacers |
TWI277204B (en) * | 2005-06-27 | 2007-03-21 | Powerchip Semiconductor Corp | Non-volatile memory and manufacturing method and operating method thereof |
US7319618B2 (en) * | 2005-08-16 | 2008-01-15 | Macronic International Co., Ltd. | Low-k spacer structure for flash memory |
TWI311796B (en) * | 2005-11-17 | 2009-07-01 | Ememory Technology Inc | Semiconductor device and manufacturing method thereof |
TWI287868B (en) * | 2005-11-17 | 2007-10-01 | Ememory Technology Inc | Single-poly non-volatile memory device |
US20070278556A1 (en) * | 2006-05-30 | 2007-12-06 | Ya-Chin King | Two bits non volatile memory cells and method of operating the same |
US20070297224A1 (en) * | 2006-06-27 | 2007-12-27 | Ya-Chin King | MOS based nonvolatile memory cell and method of operating the same |
-
2006
- 2006-01-03 TW TW095100230A patent/TWI287868B/zh active
- 2006-01-06 TW TW095100665A patent/TWI292622B/zh active
- 2006-03-10 TW TW095108181A patent/TWI299866B/zh not_active IP Right Cessation
- 2006-03-24 US US11/277,365 patent/US20070109860A1/en not_active Abandoned
- 2006-03-24 US US11/277,364 patent/US20070108508A1/en not_active Abandoned
- 2006-04-28 US US11/380,662 patent/US20070109872A1/en not_active Abandoned
- 2006-08-28 CN CNA2006101216827A patent/CN1967871A/zh active Pending
- 2006-08-31 CN CNA2006101280024A patent/CN1967878A/zh active Pending
- 2006-10-30 CN CNA2006101425540A patent/CN1967879A/zh active Pending
-
2008
- 2008-05-22 US US12/125,912 patent/US7551494B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US7551494B2 (en) | 2009-06-23 |
TW200721162A (en) | 2007-06-01 |
CN1967879A (zh) | 2007-05-23 |
CN1967871A (zh) | 2007-05-23 |
US20080293199A1 (en) | 2008-11-27 |
US20070109872A1 (en) | 2007-05-17 |
CN1967878A (zh) | 2007-05-23 |
TW200721462A (en) | 2007-06-01 |
TWI287868B (en) | 2007-10-01 |
US20070108508A1 (en) | 2007-05-17 |
TWI292622B (en) | 2008-01-11 |
US20070109860A1 (en) | 2007-05-17 |
TWI299866B (en) | 2008-08-11 |
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