TW200720484A - Rare earth metal member, and making method - Google Patents

Rare earth metal member, and making method

Info

Publication number
TW200720484A
TW200720484A TW095123402A TW95123402A TW200720484A TW 200720484 A TW200720484 A TW 200720484A TW 095123402 A TW095123402 A TW 095123402A TW 95123402 A TW95123402 A TW 95123402A TW 200720484 A TW200720484 A TW 200720484A
Authority
TW
Taiwan
Prior art keywords
rare earth
earth metal
metal member
making method
ppm
Prior art date
Application number
TW095123402A
Other languages
English (en)
Other versions
TWI408256B (zh
Inventor
Toshihiko Tsukatani
Hajime Nakano
Takao Maeda
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2005189830A external-priority patent/JP2007009988A/ja
Priority claimed from JP2005189811A external-priority patent/JP4544425B2/ja
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of TW200720484A publication Critical patent/TW200720484A/zh
Application granted granted Critical
Publication of TWI408256B publication Critical patent/TWI408256B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B59/00—Obtaining rare earth metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/10—Other heavy metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/968—Semiconductor-metal-semiconductor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Powder Metallurgy (AREA)
TW095123402A 2005-06-29 2006-06-28 Rare earth metal member and manufacturing method thereof TWI408256B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005189830A JP2007009988A (ja) 2005-06-29 2005-06-29 希土類金属部品
JP2005189811A JP4544425B2 (ja) 2005-06-29 2005-06-29 希土類金属部材の製造方法

Publications (2)

Publication Number Publication Date
TW200720484A true TW200720484A (en) 2007-06-01
TWI408256B TWI408256B (zh) 2013-09-11

Family

ID=36950260

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095123402A TWI408256B (zh) 2005-06-29 2006-06-28 Rare earth metal member and manufacturing method thereof

Country Status (5)

Country Link
US (1) US7674427B2 (zh)
EP (1) EP1739196B1 (zh)
KR (1) KR101238528B1 (zh)
DE (1) DE602006005194D1 (zh)
TW (1) TWI408256B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI418638B (zh) * 2007-12-28 2013-12-11 Jx Nippon Mining & Metals Corp High purity lanthanum, high purity lanthanum composed of sputtering target and high purity lanthanum as the main component of the metal gate film

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8129029B2 (en) * 2007-12-21 2012-03-06 Applied Materials, Inc. Erosion-resistant plasma chamber components comprising a metal base structure with an overlying thermal oxidation coating
CN102356180B (zh) * 2009-03-27 2013-11-06 吉坤日矿日石金属株式会社 溅射用镧靶
WO2010113638A1 (ja) * 2009-03-31 2010-10-07 日鉱金属株式会社 スパッタリング用ランタンターゲット
EP2641982B1 (en) * 2010-11-19 2019-07-24 JX Nippon Mining & Metals Corporation Production method for high-purity lanthanum, high-purity lanthanum, sputtering target composed of high-purity lanthanum, and metal gate film containing high-purity lanthanum as main component
US9013009B2 (en) 2011-01-21 2015-04-21 Jx Nippon Mining & Metals Corporation Method for producing high-purity lanthanum, high-purity lanthanum, sputtering target formed from high-purity lanthanum, and metal gate film having highy-purity lanthanum as main component
CN116516193B (zh) * 2023-04-28 2024-06-18 有研稀土新材料股份有限公司 一种含稀土和铜的中间合金及其制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3789014A (en) * 1972-06-14 1974-01-29 Westinghouse Electric Corp Yttrium phosphate vanadate phosphor
GB1579978A (en) * 1977-07-05 1980-11-26 Johnson Matthey Co Ltd Production of yttrium
JPH04176887A (ja) * 1990-11-13 1992-06-24 Nikko Kyodo Co Ltd 高純度ｙの製造方法
JPH0517134A (ja) * 1991-04-12 1993-01-26 Nikko Kyodo Co Ltd 無水塩化イツトリウムの真空蒸留装置
JP2702649B2 (ja) * 1992-09-17 1998-01-21 信越化学工業株式会社 高純度希土類金属の製造法
JPH104083A (ja) 1996-06-17 1998-01-06 Kyocera Corp 半導体製造用耐食性部材
JP3619330B2 (ja) 1996-07-31 2005-02-09 京セラ株式会社 プラズマプロセス装置用部材
JPH10204508A (ja) * 1997-01-13 1998-08-04 Shin Etsu Chem Co Ltd 希土類金属粉末製造用原料希土類金属およびそれを用いた希土類金属粉末の製造方法
US6447937B1 (en) * 1997-02-26 2002-09-10 Kyocera Corporation Ceramic materials resistant to halogen plasma and components using the same
AUPP762398A0 (en) * 1998-12-09 1999-01-14 Cairnscorp Technology Pty. Limited Cleaning solutions containing citric acid and uses thereof
JP2001123206A (ja) * 1999-10-25 2001-05-08 Shin Etsu Chem Co Ltd 希土類金属電極及び回転電極アトマイズ法により得られる希土類金属粉末
AU2001265309A1 (en) * 2000-06-02 2001-12-17 Honeywell International, Inc. Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method
JP2002241971A (ja) * 2001-02-14 2002-08-28 Toshiba Ceramics Co Ltd 耐プラズマ性部材
JP2003147474A (ja) * 2001-11-07 2003-05-21 Shin Etsu Chem Co Ltd 耐食性部材及びエキシマレーザ発振装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI418638B (zh) * 2007-12-28 2013-12-11 Jx Nippon Mining & Metals Corp High purity lanthanum, high purity lanthanum composed of sputtering target and high purity lanthanum as the main component of the metal gate film

Also Published As

Publication number Publication date
DE602006005194D1 (de) 2009-04-02
US20070003790A1 (en) 2007-01-04
EP1739196A1 (en) 2007-01-03
TWI408256B (zh) 2013-09-11
US7674427B2 (en) 2010-03-09
KR20070001809A (ko) 2007-01-04
KR101238528B1 (ko) 2013-02-28
EP1739196B1 (en) 2009-02-18

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees