TW200715068A - Lithographic method - Google Patents

Lithographic method

Info

Publication number
TW200715068A
TW200715068A TW095132414A TW95132414A TW200715068A TW 200715068 A TW200715068 A TW 200715068A TW 095132414 A TW095132414 A TW 095132414A TW 95132414 A TW95132414 A TW 95132414A TW 200715068 A TW200715068 A TW 200715068A
Authority
TW
Taiwan
Prior art keywords
photoresist
actinic radiation
developer
polymer resin
exposure
Prior art date
Application number
TW095132414A
Other languages
English (en)
Inventor
Peter Zandbergen
Jeroen H Lammers
Steenwinckel David Van
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of TW200715068A publication Critical patent/TW200715068A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW095132414A 2005-09-06 2006-09-01 Lithographic method TW200715068A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05108163 2005-09-06

Publications (1)

Publication Number Publication Date
TW200715068A true TW200715068A (en) 2007-04-16

Family

ID=37667245

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095132414A TW200715068A (en) 2005-09-06 2006-09-01 Lithographic method

Country Status (6)

Country Link
US (1) US7897324B2 (zh)
EP (1) EP1927029A1 (zh)
JP (1) JP2009507262A (zh)
CN (1) CN101258445B (zh)
TW (1) TW200715068A (zh)
WO (1) WO2007029176A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9046762B2 (en) 2010-02-18 2015-06-02 Empire Technology Development Llc Nanoimprint lithography
KR101989707B1 (ko) * 2014-07-08 2019-06-14 도쿄엘렉트론가부시키가이샤 네거티브톤 현상제 겸용 포토레지스트 조성물 및 이용 방법
TWI836178B (zh) * 2021-01-08 2024-03-21 台灣積體電路製造股份有限公司 微影曝光系統及用於該系統的方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5178989A (en) * 1989-07-21 1993-01-12 Board Of Regents, The University Of Texas System Pattern forming and transferring processes
EP0537524A1 (en) * 1991-10-17 1993-04-21 Shipley Company Inc. Radiation sensitive compositions and methods
JP3010607B2 (ja) 1992-02-25 2000-02-21 ジェイエスアール株式会社 感放射線性樹脂組成物
JP3203995B2 (ja) 1993-12-24 2001-09-04 ジェイエスアール株式会社 感放射線性樹脂組成物
DE4408507A1 (de) * 1994-03-14 1995-09-28 Heidelberg Instruments Mikrotechnik Gmbh Lithografisches Verfahren
JP3743187B2 (ja) * 1998-05-08 2006-02-08 住友化学株式会社 フォトレジスト組成物
US6787283B1 (en) * 1999-07-22 2004-09-07 Fuji Photo Film Co., Ltd. Positive photoresist composition for far ultraviolet exposure
US6338934B1 (en) * 1999-08-26 2002-01-15 International Business Machines Corporation Hybrid resist based on photo acid/photo base blending
TW573225B (en) * 2000-02-28 2004-01-21 Sumitomo Chemical Co Chemically amplified positive resist composition
US6534243B1 (en) * 2000-10-23 2003-03-18 Advanced Micro Devices, Inc. Chemical feature doubling process
JP3890979B2 (ja) * 2001-12-27 2007-03-07 住友化学株式会社 化学増幅型ポジ型レジスト組成物
US6780569B1 (en) * 2002-02-04 2004-08-24 Lam Research Corporation Post-development treatment of patterned photoresist to promote cross-linking of polymer chains

Also Published As

Publication number Publication date
WO2007029176A1 (en) 2007-03-15
JP2009507262A (ja) 2009-02-19
CN101258445A (zh) 2008-09-03
CN101258445B (zh) 2011-09-28
EP1927029A1 (en) 2008-06-04
US20080241764A1 (en) 2008-10-02
US7897324B2 (en) 2011-03-01

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