TW200710573A - Material for protective film formation, and method for photoresist pattern formation using the same - Google Patents

Material for protective film formation, and method for photoresist pattern formation using the same

Info

Publication number
TW200710573A
TW200710573A TW095124959A TW95124959A TW200710573A TW 200710573 A TW200710573 A TW 200710573A TW 095124959 A TW095124959 A TW 095124959A TW 95124959 A TW95124959 A TW 95124959A TW 200710573 A TW200710573 A TW 200710573A
Authority
TW
Taiwan
Prior art keywords
protective film
film formation
same
photoresist pattern
formation
Prior art date
Application number
TW095124959A
Other languages
English (en)
Chinese (zh)
Other versions
TWI325518B (cg-RX-API-DMAC7.html
Inventor
Keita Ishiduka
Kotaro Endo
Masaaki Yoshida
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200710573A publication Critical patent/TW200710573A/zh
Application granted granted Critical
Publication of TWI325518B publication Critical patent/TWI325518B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
TW095124959A 2005-07-12 2006-07-07 Material for protective film formation, and method for photoresist pattern formation using the same TW200710573A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005203150A JP4611137B2 (ja) 2005-07-12 2005-07-12 保護膜形成用材料、およびこれを用いたホトレジストパターン形成方法

Publications (2)

Publication Number Publication Date
TW200710573A true TW200710573A (en) 2007-03-16
TWI325518B TWI325518B (cg-RX-API-DMAC7.html) 2010-06-01

Family

ID=37637013

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095124959A TW200710573A (en) 2005-07-12 2006-07-07 Material for protective film formation, and method for photoresist pattern formation using the same

Country Status (4)

Country Link
US (1) US20100124720A1 (cg-RX-API-DMAC7.html)
JP (1) JP4611137B2 (cg-RX-API-DMAC7.html)
TW (1) TW200710573A (cg-RX-API-DMAC7.html)
WO (1) WO2007007619A1 (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101840152A (zh) * 2009-03-12 2010-09-22 株式会社瑞萨科技 抗蚀剂图案的形成方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4662062B2 (ja) * 2005-06-15 2011-03-30 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
US8323872B2 (en) 2005-06-15 2012-12-04 Shin-Etsu Chemical Co., Ltd. Resist protective coating material and patterning process
US8431332B2 (en) 2007-09-26 2013-04-30 Jsr Corporation Composition for forming upper layer film for immersion exposure, upper layer film for immersion exposure, and method of forming photoresist pattern
JP5311331B2 (ja) * 2008-06-25 2013-10-09 ルネサスエレクトロニクス株式会社 液浸リソグラフィの現像処理方法および該現像処理方法を用いた電子デバイス
CN116263564A (zh) * 2021-12-13 2023-06-16 长鑫存储技术有限公司 光刻胶图案的形成方法和光刻胶结构

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002196495A (ja) * 2000-12-22 2002-07-12 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
JP4083399B2 (ja) * 2001-07-24 2008-04-30 セントラル硝子株式会社 含フッ素重合性単量体およびそれを用いた高分子化合物
US6806026B2 (en) * 2002-05-31 2004-10-19 International Business Machines Corporation Photoresist composition
JP4265766B2 (ja) * 2003-08-25 2009-05-20 東京応化工業株式会社 液浸露光プロセス用レジスト保護膜形成用材料、該保護膜形成材料からなるレジスト保護膜、および該レジスト保護膜を用いたレジストパターン形成方法
JP4609878B2 (ja) * 2003-10-28 2011-01-12 東京応化工業株式会社 レジスト上層膜形成材料、およびこれを用いたレジストパターン形成方法
JP2005220274A (ja) * 2004-02-09 2005-08-18 Shin Etsu Chem Co Ltd 高分子化合物、レジスト材料及びパターン形成方法
JP4507891B2 (ja) * 2004-02-20 2010-07-21 ダイキン工業株式会社 液浸リソグラフィーに用いるレジスト積層体
US20050202351A1 (en) * 2004-03-09 2005-09-15 Houlihan Francis M. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
JP4355944B2 (ja) * 2004-04-16 2009-11-04 信越化学工業株式会社 パターン形成方法及びこれに用いるレジスト上層膜材料
JP4621451B2 (ja) * 2004-08-11 2011-01-26 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101840152A (zh) * 2009-03-12 2010-09-22 株式会社瑞萨科技 抗蚀剂图案的形成方法

Also Published As

Publication number Publication date
TWI325518B (cg-RX-API-DMAC7.html) 2010-06-01
US20100124720A1 (en) 2010-05-20
JP2007024959A (ja) 2007-02-01
JP4611137B2 (ja) 2011-01-12
WO2007007619A1 (ja) 2007-01-18

Similar Documents

Publication Publication Date Title
EP1596251A4 (en) IMERSION EXPOSURE USE RESEARCH FILM EDUCATION MATERIAL, COMPILED FILM AND RESISTMAT EDUCATION PROCESS
TW200731016A (en) Composition for forming upper film and method for forming photoresist pattern
EP1939691A3 (en) Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
EP1601008A4 (en) IMMERSION FLUID FOR IMMERSION EXPOSURE PROCESS AND METHOD OF FORMING RESIST PATTERN USING SUCH A IMMERSION LIQUID
TW200506468A (en) Aligning agent for liquid crystal and liquid crystal alignment film obtained with the same
TW200606179A (en) Material for forming resist protection film for liquid immersion lithography and method for forming resist pattern by using the protection film
EP2019334A3 (en) Positive resist composition and method of pattern formation with the same
TW201203318A (en) Exposure method, exposure device, and device manufacturing method
SG148015A1 (en) Lithographic apparatus and device manufacturing method
TW200616101A (en) Method for manufacturing semiconductor device
TW200609682A (en) Material for formation of resist protection film and method of forming resist pattern therewith
EP1845416A3 (en) Coating compositions for photolithography
WO2008103776A3 (en) Thermally cured underlayer for lithographic application
TW200615345A (en) Composition for photoresist protective film, photoresist protective film and photoresist pattern formation process
TW200609683A (en) Material for forming resist protective film and method for forming resist pattern using the same
TW200613923A (en) Protective film-forming composition for immersion exposure and pattern forming method using the same
DK1819366T3 (da) Bejdsesammensætning til bejdsning af en ophthalmisk membran
TW200710573A (en) Material for protective film formation, and method for photoresist pattern formation using the same
TW200628988A (en) Photoresist composition for colour filter and preparation method of liquid crystal display colour filter using the same
WO2009143482A3 (en) Negative tone molecular glass resists and methods of making and using same
WO2011014020A3 (ko) 자가정렬 이중 패턴 형성용 포토레지스트 조성물
TW200734830A (en) Lithogrpahic apparatus and device manufacturing method using multiple exposures and multiple exposure types
TW200707095A (en) Photoresist composition, method for forming film pattern using the same, and method for manufacturing thin film transistor array panel using the same
TW200719088A (en) Method for forming positive resist composition, positive resist composition, and method for forming resist pattern
TW200615701A (en) Determination method of exposure conditions, exposure method, exposure device and manufacturing method of the device