TW200710260A - Material for an insulating film, film forming method and insulating film using the same - Google Patents

Material for an insulating film, film forming method and insulating film using the same

Info

Publication number
TW200710260A
TW200710260A TW095129155A TW95129155A TW200710260A TW 200710260 A TW200710260 A TW 200710260A TW 095129155 A TW095129155 A TW 095129155A TW 95129155 A TW95129155 A TW 95129155A TW 200710260 A TW200710260 A TW 200710260A
Authority
TW
Taiwan
Prior art keywords
insulating film
film
same
forming method
tetravinylsilane
Prior art date
Application number
TW095129155A
Other languages
English (en)
Inventor
Takahisa Ohno
Nobuo Tajima
Tomoyuki Hamada
Nobuyoshi Kobayashi
Minoru Inoue
Satoshi Hasaka
Kaoru Sakota
Manabu Shinriki
Kazuhiro Miyazawa
Original Assignee
Taiyo Nippon Sanso Corp
Nat Inst For Materials Science
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2005231874A external-priority patent/JP2007048955A/ja
Application filed by Taiyo Nippon Sanso Corp, Nat Inst For Materials Science filed Critical Taiyo Nippon Sanso Corp
Publication of TW200710260A publication Critical patent/TW200710260A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW095129155A 2005-08-10 2006-08-09 Material for an insulating film, film forming method and insulating film using the same TW200710260A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005231874A JP2007048955A (ja) 2005-08-10 2005-08-10 絶縁膜用材料、この絶縁膜用材料を用いた成膜方法および絶縁膜
JP2006123632 2006-04-27

Publications (1)

Publication Number Publication Date
TW200710260A true TW200710260A (en) 2007-03-16

Family

ID=37727448

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095129155A TW200710260A (en) 2005-08-10 2006-08-09 Material for an insulating film, film forming method and insulating film using the same

Country Status (2)

Country Link
TW (1) TW200710260A (zh)
WO (1) WO2007018268A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5559988B2 (ja) 2009-06-03 2014-07-23 東京エレクトロン株式会社 シリコン酸化膜用成膜原料およびそれを用いたシリコン酸化膜の成膜方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3226479B2 (ja) * 1996-08-29 2001-11-05 松下電器産業株式会社 層間絶縁膜の形成方法
JP3726226B2 (ja) * 1998-02-05 2005-12-14 日本エー・エス・エム株式会社 絶縁膜及びその製造方法
JP4479190B2 (ja) * 2003-08-22 2010-06-09 東ソー株式会社 アルケニル基含有有機シラン化合物を含んでなる絶縁膜用材料、それを用いた絶縁膜および半導体デバイス

Also Published As

Publication number Publication date
WO2007018268A1 (ja) 2007-02-15

Similar Documents

Publication Publication Date Title
WO2009102816A3 (en) Removing carbon dioxide from gaseous emissions
WO2009062059A3 (en) Isomeric purinones and 1h-imidazopyridinones as pkc-theta inhibitors
MX2010003918A (es) Compuesto de amida.
WO2008124559A3 (en) Durable transparent coatings for polymeric substrates
TW200609238A (en) Chemical vapor deposition material and chemical vapor deposition
FR2928662B1 (fr) Procede et systeme de depot d'un metal ou metalloide sur des nanotubes de carbone
MXPA05005139A (es) Nuevo proceso para la sintesis de (1s)-4,5-dimetoxi-1-(metilaminometil)-benzociclobutano y sales de adicion del mismo, y aplicacion en la sintesis de ivabradina y sales de adicion de la misma con un acido farmaceuticamente aceptable.
MX2007005933A (es) Compuestos de acetamida como fungicidas.
TW200717611A (en) Film formation method and apparatus for semiconductor process
WO2011146212A3 (en) Ultra high selectivity ashable hard mask film
JP2008513566A5 (zh)
WO2006083357A3 (en) Methods and devices for making carbon nanotubes and compositions thereof
MX2007004642A (es) Combinaciones polimericas para producir peliculas con un numero reducido de defectos.
ATE548327T1 (de) Verfahren zur herstellung von nanostrukturen
WO2007005816A3 (en) Low-temperature catalyzed formation of segmented nanowire of dielectric material
NZ583210A (en) Tool comprising a cam track and cam follower with first and second cam tracks
ATE507270T1 (de) Antiadhäsive beschichtung von bauteilen zur verhinderung von ölkohleanbackungen
DE502006004463D1 (de) Vorrichtung und verfahren zur kontinuierlichen gasphasenabscheidung unter atmosphärendruck und deren verwendung
MY144180A (en) Method for producing strontium ranelate and its hydrates
UA88008C2 (en) Water-soluble prodrugs
TW200613529A (en) Liquid-crystalline medium
MX2009012612A (es) Purinonas e inhibidores 1h-imidazopiridinonas como pkc-theta.
WO2008111499A1 (ja) コバルト含有膜形成材料、および該材料を用いたコバルトシリサイド膜の製造方法
TW200724710A (en) Apparatus and substrate structure for growing carbon nanotubes
TW200738650A (en) Process for synthesis of aryloxy diaminopyrimidines