TW200702933A - Composition for forming intermediate layer containing silylphenylene-based polymer and pattern-forming method - Google Patents

Composition for forming intermediate layer containing silylphenylene-based polymer and pattern-forming method

Info

Publication number
TW200702933A
TW200702933A TW095114472A TW95114472A TW200702933A TW 200702933 A TW200702933 A TW 200702933A TW 095114472 A TW095114472 A TW 095114472A TW 95114472 A TW95114472 A TW 95114472A TW 200702933 A TW200702933 A TW 200702933A
Authority
TW
Taiwan
Prior art keywords
forming
composition
intermediate layer
silylphenylene
based polymer
Prior art date
Application number
TW095114472A
Other languages
English (en)
Inventor
Naoki Yamashita
Hisanobu Harada
Yasushi Fujii
Yoshinori Sakamoto
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200702933A publication Critical patent/TW200702933A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Structural Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Physics & Mathematics (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Silicon Polymers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Paints Or Removers (AREA)
TW095114472A 2005-05-19 2006-04-21 Composition for forming intermediate layer containing silylphenylene-based polymer and pattern-forming method TW200702933A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005146847A JP2006323180A (ja) 2005-05-19 2005-05-19 シリルフェニレン系ポリマー含有中間層形成用組成物およびそれを用いたパターン形成方法

Publications (1)

Publication Number Publication Date
TW200702933A true TW200702933A (en) 2007-01-16

Family

ID=37448681

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095114472A TW200702933A (en) 2005-05-19 2006-04-21 Composition for forming intermediate layer containing silylphenylene-based polymer and pattern-forming method

Country Status (4)

Country Link
US (1) US20060263702A1 (zh)
JP (1) JP2006323180A (zh)
KR (1) KR100763828B1 (zh)
TW (1) TW200702933A (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006009123A1 (ja) * 2004-07-16 2006-01-26 Toagosei Co., Ltd. ポリカルボシラン及びその製造方法
KR101439295B1 (ko) 2006-11-28 2014-09-11 닛산 가가쿠 고교 가부시키 가이샤 방향족 축합환을 함유하는 수지를 포함하는 리소그래피용 레지스트 하층막 형성 조성물
JP2008286924A (ja) * 2007-05-16 2008-11-27 Panasonic Corp 化学増幅型レジスト材料、トップコート膜形成用材料及びそれらを用いたパターン形成方法
WO2018230671A1 (ja) * 2017-06-16 2018-12-20 Jsr株式会社 パターン形成方法及びｅｕｖリソグラフィー用ケイ素含有膜形成組成物
US20220163889A1 (en) * 2020-11-20 2022-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Metallic photoresist patterning and defect improvement

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01123232A (ja) * 1987-11-09 1989-05-16 Mitsubishi Electric Corp パターン形成方法
JP3785452B2 (ja) * 2001-09-06 2006-06-14 独立行政法人産業技術総合研究所 芳香族ポリカルボシランを含む層間絶縁膜及びこれを用いた半導体装置
JP2003174024A (ja) * 2001-12-06 2003-06-20 Mitsui Chemicals Inc 層間絶縁膜形成用組成物、層間絶縁膜およびその形成方法
JP2003297820A (ja) * 2002-03-29 2003-10-17 Jsr Corp 半導体装置用層間膜形成用組成物および半導体装置用層間膜
JP2006002125A (ja) * 2004-06-21 2006-01-05 Tokyo Ohka Kogyo Co Ltd カルボシラン系ポリマーを含んでなる被膜形成用組成物、および該組成物から得られた被膜

Also Published As

Publication number Publication date
JP2006323180A (ja) 2006-11-30
KR20060120429A (ko) 2006-11-27
KR100763828B1 (ko) 2007-10-05
US20060263702A1 (en) 2006-11-23

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