TW200644178A - Flash memory and manufacturing method thereof - Google Patents
Flash memory and manufacturing method thereofInfo
- Publication number
- TW200644178A TW200644178A TW094118692A TW94118692A TW200644178A TW 200644178 A TW200644178 A TW 200644178A TW 094118692 A TW094118692 A TW 094118692A TW 94118692 A TW94118692 A TW 94118692A TW 200644178 A TW200644178 A TW 200644178A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- control gate
- mask
- conductive layer
- opening
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 3
- 239000012212 insulator Substances 0.000 abstract 1
- 230000005641 tunneling Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7887—Programmable transistors with more than two possible different levels of programmation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094118692A TWI258207B (en) | 2005-06-07 | 2005-06-07 | Flash memory and manufacturing method thereof |
US11/307,010 US7335940B2 (en) | 2005-06-07 | 2006-01-19 | Flash memory and manufacturing method thereof |
US11/955,348 US20080090355A1 (en) | 2005-06-07 | 2007-12-12 | Manufacturing method of flash memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094118692A TWI258207B (en) | 2005-06-07 | 2005-06-07 | Flash memory and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI258207B TWI258207B (en) | 2006-07-11 |
TW200644178A true TW200644178A (en) | 2006-12-16 |
Family
ID=37494682
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094118692A TWI258207B (en) | 2005-06-07 | 2005-06-07 | Flash memory and manufacturing method thereof |
Country Status (2)
Country | Link |
---|---|
US (2) | US7335940B2 (zh) |
TW (1) | TWI258207B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI263308B (en) * | 2005-01-28 | 2006-10-01 | Powerchip Semiconductor Corp | Method of fabricating non-volatile memory |
TWI349340B (en) * | 2007-09-03 | 2011-09-21 | Nanya Technology Corp | Method for manufacturing non-volatile memory |
JP5190985B2 (ja) * | 2008-02-08 | 2013-04-24 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
JP5190986B2 (ja) * | 2008-02-08 | 2013-04-24 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
JP2009188293A (ja) * | 2008-02-08 | 2009-08-20 | Nec Electronics Corp | 不揮発性半導体記憶装置及びその製造方法 |
KR101488417B1 (ko) * | 2008-08-19 | 2015-01-30 | 삼성전자주식회사 | 전하의 측면 이동을 억제하는 메모리 소자 |
TWI395290B (zh) * | 2009-05-26 | 2013-05-01 | Winbond Electronics Corp | 快閃記憶體及其製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6798012B1 (en) * | 1999-12-10 | 2004-09-28 | Yueh Yale Ma | Dual-bit double-polysilicon source-side injection flash EEPROM cell |
DE10016715C1 (de) * | 2000-04-04 | 2001-09-06 | Infineon Technologies Ag | Herstellungsverfahren für laminierte Chipkarten |
US6943119B2 (en) * | 2003-12-01 | 2005-09-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Flash process for stacking poly etching |
TWI233666B (en) * | 2004-04-13 | 2005-06-01 | Powerchip Semiconductor Corp | Method of manufacturing non-volatile memory cell |
KR100654341B1 (ko) * | 2004-12-08 | 2006-12-08 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 제조방법 |
-
2005
- 2005-06-07 TW TW094118692A patent/TWI258207B/zh not_active IP Right Cessation
-
2006
- 2006-01-19 US US11/307,010 patent/US7335940B2/en active Active
-
2007
- 2007-12-12 US US11/955,348 patent/US20080090355A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20060275985A1 (en) | 2006-12-07 |
TWI258207B (en) | 2006-07-11 |
US7335940B2 (en) | 2008-02-26 |
US20080090355A1 (en) | 2008-04-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |