TW200725914A - Method of manufacturing floating gate layer and non-volatile memory - Google Patents
Method of manufacturing floating gate layer and non-volatile memoryInfo
- Publication number
- TW200725914A TW200725914A TW094146079A TW94146079A TW200725914A TW 200725914 A TW200725914 A TW 200725914A TW 094146079 A TW094146079 A TW 094146079A TW 94146079 A TW94146079 A TW 94146079A TW 200725914 A TW200725914 A TW 200725914A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- floating gate
- gate layer
- volatile memory
- substrate
- Prior art date
Links
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
A manufacturing method of floating gate layer is described. First, a substrate is provided, and a mask layer is formed on the substrate. Then, some trenches are formed in the mask layer and the substrate. Later on, an insulating layer is formed on the mask layer and fills the trenches, and the top surface of the insulating layer is higher than that of the mask layer. Next, part of the insulating layer is removed to form some first openings which expose the mask layer. After that, the mask layer in the first opening is removed to expose the substrate. Then, a tunneling dielectric layer is formed on the substrate. A floating gate layer is formed on the tunneling dielectric layer to fill these first openings.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94146079A TWI285961B (en) | 2005-12-23 | 2005-12-23 | Method of manufacturing floating gate layer and non-volatile memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94146079A TWI285961B (en) | 2005-12-23 | 2005-12-23 | Method of manufacturing floating gate layer and non-volatile memory |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200725914A true TW200725914A (en) | 2007-07-01 |
TWI285961B TWI285961B (en) | 2007-08-21 |
Family
ID=39457410
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94146079A TWI285961B (en) | 2005-12-23 | 2005-12-23 | Method of manufacturing floating gate layer and non-volatile memory |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI285961B (en) |
-
2005
- 2005-12-23 TW TW94146079A patent/TWI285961B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TWI285961B (en) | 2007-08-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |