TW200644124A - Bipolar transistor and method of fabricating the same - Google Patents
Bipolar transistor and method of fabricating the sameInfo
- Publication number
- TW200644124A TW200644124A TW095114737A TW95114737A TW200644124A TW 200644124 A TW200644124 A TW 200644124A TW 095114737 A TW095114737 A TW 095114737A TW 95114737 A TW95114737 A TW 95114737A TW 200644124 A TW200644124 A TW 200644124A
- Authority
- TW
- Taiwan
- Prior art keywords
- collector
- region
- protrusion
- connecting region
- base
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000009413 insulation Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
- H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05103490 | 2005-04-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200644124A true TW200644124A (en) | 2006-12-16 |
Family
ID=37215138
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095114737A TW200644124A (en) | 2005-04-28 | 2006-04-25 | Bipolar transistor and method of fabricating the same |
Country Status (6)
Country | Link |
---|---|
US (1) | US20090212394A1 (zh) |
EP (1) | EP1878045A2 (zh) |
JP (1) | JP2008538864A (zh) |
CN (1) | CN101167167A (zh) |
TW (1) | TW200644124A (zh) |
WO (1) | WO2006114746A2 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5112648B2 (ja) * | 2006-05-29 | 2013-01-09 | セイコーインスツル株式会社 | 半導体装置 |
EP2224478B1 (en) | 2007-12-20 | 2018-01-24 | Asahi Kasei EMD Corporation | Semiconductor device and method for manufacturing the same |
CN102017130A (zh) * | 2008-02-28 | 2011-04-13 | Nxp股份有限公司 | 半导体器件及其制造方法 |
US8921195B2 (en) * | 2012-10-26 | 2014-12-30 | International Business Machines Corporation | Isolation scheme for bipolar transistors in BiCMOS technology |
EP2800127B1 (en) | 2013-05-01 | 2020-07-08 | Nxp B.V. | Method of manufacturing a bipolar transistor, bipolar transistor and integrated circuit |
EP3041052A1 (en) | 2015-01-05 | 2016-07-06 | Ampleon Netherlands B.V. | Semiconductor device comprising a lateral drift vertical bipolar transistor |
FR3079964A1 (fr) * | 2018-04-06 | 2019-10-11 | Stmicroelectronics (Crolles 2) Sas | Circuit integre a transistors bipolaires |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4157269A (en) * | 1978-06-06 | 1979-06-05 | International Business Machines Corporation | Utilizing polysilicon diffusion sources and special masking techniques |
US4309812A (en) * | 1980-03-03 | 1982-01-12 | International Business Machines Corporation | Process for fabricating improved bipolar transistor utilizing selective etching |
KR890004973B1 (ko) * | 1985-04-10 | 1989-12-02 | 후지쓰 가부시기 가이샤 | 자기정합된 바이폴라트랜지스터의 제조방법 |
US4782030A (en) * | 1986-07-09 | 1988-11-01 | Kabushiki Kaisha Toshiba | Method of manufacturing bipolar semiconductor device |
NL8700640A (nl) * | 1987-03-18 | 1988-10-17 | Philips Nv | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
US5001533A (en) * | 1988-12-22 | 1991-03-19 | Kabushiki Kaisha Toshiba | Bipolar transistor with side wall base contacts |
JP2679639B2 (ja) * | 1994-09-12 | 1997-11-19 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JP4288852B2 (ja) * | 2000-12-27 | 2009-07-01 | 住友電気工業株式会社 | バイポーラトランジスタの製造方法 |
US20030082882A1 (en) * | 2001-10-31 | 2003-05-01 | Babcock Jeffrey A. | Control of dopant diffusion from buried layers in bipolar integrated circuits |
-
2006
- 2006-04-21 US US11/912,606 patent/US20090212394A1/en not_active Abandoned
- 2006-04-21 EP EP06728007A patent/EP1878045A2/en not_active Withdrawn
- 2006-04-21 JP JP2008508372A patent/JP2008538864A/ja not_active Withdrawn
- 2006-04-21 WO PCT/IB2006/051248 patent/WO2006114746A2/en active Application Filing
- 2006-04-21 CN CNA2006800143193A patent/CN101167167A/zh active Pending
- 2006-04-25 TW TW095114737A patent/TW200644124A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
JP2008538864A (ja) | 2008-11-06 |
EP1878045A2 (en) | 2008-01-16 |
CN101167167A (zh) | 2008-04-23 |
US20090212394A1 (en) | 2009-08-27 |
WO2006114746A2 (en) | 2006-11-02 |
WO2006114746A3 (en) | 2007-06-21 |
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