TW200636232A - Electron beam device - Google Patents

Electron beam device

Info

Publication number
TW200636232A
TW200636232A TW095105569A TW95105569A TW200636232A TW 200636232 A TW200636232 A TW 200636232A TW 095105569 A TW095105569 A TW 095105569A TW 95105569 A TW95105569 A TW 95105569A TW 200636232 A TW200636232 A TW 200636232A
Authority
TW
Taiwan
Prior art keywords
electron beam
sub
area
areas
image
Prior art date
Application number
TW095105569A
Other languages
English (en)
Other versions
TWI458967B (zh
Inventor
Mamoru Nakasuji
Nobuharu Noji
Tohru Satake
Hirosi Sobukawa
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2005041063A external-priority patent/JP2006226833A/ja
Priority claimed from JP2005077136A external-priority patent/JP2006260957A/ja
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of TW200636232A publication Critical patent/TW200636232A/zh
Application granted granted Critical
Publication of TWI458967B publication Critical patent/TWI458967B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/244Detectors; Associated components or circuits therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/22Optical or photographic arrangements associated with the tube
    • H01J37/226Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/29Reflection microscopes
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136254Checking; Testing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15Means for deflecting or directing discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/248Components associated with the control of the tube
    • H01J2237/2482Optical means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • H01J2237/2813Scanning microscopes characterised by the application
    • H01J2237/2817Pattern inspection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Measurement Of Radiation (AREA)
TW095105569A 2005-02-17 2006-02-17 電子射線裝置 TWI458967B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005041063A JP2006226833A (ja) 2005-02-17 2005-02-17 欠陥検査装置及び欠陥検査装置を用いたデバイス製造方法
JP2005077136A JP2006260957A (ja) 2005-03-17 2005-03-17 電子線装置

Publications (2)

Publication Number Publication Date
TW200636232A true TW200636232A (en) 2006-10-16
TWI458967B TWI458967B (zh) 2014-11-01

Family

ID=36916538

Family Applications (3)

Application Number Title Priority Date Filing Date
TW101142358A TW201307833A (zh) 2005-02-17 2006-02-17 電子射線裝置
TW103134994A TWI519779B (zh) 2005-02-17 2006-02-17 電子射線裝置
TW095105569A TWI458967B (zh) 2005-02-17 2006-02-17 電子射線裝置

Family Applications Before (2)

Application Number Title Priority Date Filing Date
TW101142358A TW201307833A (zh) 2005-02-17 2006-02-17 電子射線裝置
TW103134994A TWI519779B (zh) 2005-02-17 2006-02-17 電子射線裝置

Country Status (4)

Country Link
US (1) US9390886B2 (zh)
KR (2) KR101377106B1 (zh)
TW (3) TW201307833A (zh)
WO (1) WO2006088141A1 (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI488209B (zh) * 2010-05-07 2015-06-11 Integrated Circuit Testing 具有色散補償的電子光束裝置,及其操作方法
US9194826B2 (en) 2007-04-16 2015-11-24 Ebara Corporation Electron beam apparatus and sample observation method using the same
TWI648535B (zh) * 2016-07-27 2019-01-21 日商紐富來科技股份有限公司 帶電粒子束檢查裝置及帶電粒子束檢查方法
TWI673748B (zh) * 2014-12-22 2019-10-01 美商應用材料股份有限公司 用於檢查基板的設備、用於檢查基板的方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4741408B2 (ja) 2006-04-27 2011-08-03 株式会社荏原製作所 試料パターン検査装置におけるxy座標補正装置及び方法
EP2113092B1 (en) * 2006-12-18 2014-08-27 Datalogic IP TECH S.r.l. Aiming device
US8080790B2 (en) * 2008-03-05 2011-12-20 Hitachi High-Technologies Corporation Scanning electron microscope
JP2013125652A (ja) * 2011-12-14 2013-06-24 Samsung Yokohama Research Institute Co Ltd 電子線装置
JP5942411B2 (ja) * 2011-12-15 2016-06-29 富士ゼロックス株式会社 送風管、送風装置及び画像形成装置
JP5919813B2 (ja) * 2011-12-27 2016-05-18 富士ゼロックス株式会社 送風管、送風装置及び画像形成装置
JP6724145B2 (ja) 2016-01-27 2020-07-15 エーエスエムエル ネザーランズ ビー.ブイ. 複数の荷電粒子ビームの装置
JP6865646B2 (ja) 2016-11-30 2021-04-28 住友化学株式会社 欠陥検査装置、欠陥検査方法、及びセパレータ捲回体の製造方法
CN108132262A (zh) * 2016-11-30 2018-06-08 住友化学株式会社 缺陷检查装置、缺陷检查方法及隔膜卷绕体的制造方法
US10777377B2 (en) * 2017-02-05 2020-09-15 Kla-Tencor Corporation Multi-column spacing for photomask and reticle inspection and wafer print check verification
KR102327112B1 (ko) 2017-04-05 2021-11-16 가부시키가이샤 포토 일렉트론 소울 전자선 발생 장치, 및, 전자선 적용 장치
CN111328425A (zh) * 2017-11-10 2020-06-23 Asml荷兰有限公司 电子束检查工具和用于定位载物台的方法
US11087950B2 (en) * 2018-05-29 2021-08-10 Kla-Tencor Corporation Charge control device for a system with multiple electron beams
TWI696206B (zh) * 2018-09-27 2020-06-11 日商Photo Electron Soul股份有限公司 電子射線產生裝置以及電子射線應用裝置
JP7234052B2 (ja) 2019-06-28 2023-03-07 株式会社ニューフレアテクノロジー マルチ電子ビーム画像取得装置及びマルチ電子ビーム画像取得方法
US11335608B2 (en) 2020-04-15 2022-05-17 Kla Corporation Electron beam system for inspection and review of 3D devices

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7114692A (zh) * 1970-10-28 1972-05-03
JPS63231856A (ja) * 1987-03-19 1988-09-27 Jeol Ltd 電子顕微鏡等の制御方法
GB2204770B (en) * 1987-04-10 1991-11-27 British Aerospace Imaging system
US6051834A (en) * 1991-05-15 2000-04-18 Hitachi, Ltd. Electron microscope
US5748264A (en) * 1995-01-10 1998-05-05 Hughes Electronics Distortion Corrected display
DE29507225U1 (de) * 1995-04-29 1995-07-13 Gruenewald Wolfgang Dr Rer Nat Ionenstrahlpräparationsvorrichtung für die Elektronenmikroskopie
JPH10106467A (ja) * 1996-09-30 1998-04-24 Nikon Corp 電子レンズおよび無回転レンズ系
WO1999009582A1 (fr) * 1997-08-19 1999-02-25 Nikon Corporation Dispositif et procede servant a observer un objet
JP3534582B2 (ja) * 1997-10-02 2004-06-07 株式会社日立製作所 パターン欠陥検査方法および検査装置
JPH11233060A (ja) * 1998-02-17 1999-08-27 Fujitsu Ltd 2次電子検出器及びこれを用いた電子ビーム装置
US6670602B1 (en) * 1998-06-03 2003-12-30 Nikon Corporation Scanning device and scanning method
US6465783B1 (en) * 1999-06-24 2002-10-15 Nikon Corporation High-throughput specimen-inspection apparatus and methods utilizing multiple parallel charged particle beams and an array of multiple secondary-electron-detectors
JP3987267B2 (ja) * 2000-05-12 2007-10-03 株式会社日立製作所 荷電粒子線装置
US20020034411A1 (en) * 2000-07-06 2002-03-21 Rusk Chris E. Gripping device for hand held implement
WO2002037526A1 (fr) * 2000-11-02 2002-05-10 Ebara Corporation Appareil a faisceau electronique et procede de fabrication d'un dispositif a semi-conducteur comprenant ledit appareil
EP1273907A4 (en) * 2000-11-17 2006-08-30 Ebara Corp METHOD AND INSTRUMENT FOR WAFER INSPECTION AND ELECTRON BEAM
EP1261016A4 (en) * 2000-12-12 2007-06-27 Ebara Corp ELECTRON BEAM DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICES USING THE ELECTRON BEAM DEVICE
JP3943832B2 (ja) * 2000-12-28 2007-07-11 株式会社東芝 基板検査装置およびその制御方法
EP1271604A4 (en) * 2001-01-10 2005-05-25 Ebara Corp EXAMINATION DEVICE AND INVESTIGATION METHOD WITH ELECTRON BEAM AND COMPONENT MANUFACTURING METHODS WITH THE INVESTIGATION DEVICE
US7498564B2 (en) * 2001-02-06 2009-03-03 University Of Bristol Of Senate House Resonant scanning near-field optical microscope
DE10122957B4 (de) * 2001-05-11 2005-06-02 Akt Electron Beam Technology Gmbh Teilchenstrahlapparat mit energiekorrigierter Strahlablenkung sowie Vorrichtungund Verfahren zur energiekorrigierten Ablenkung eines Teilchenstrahls
TW589723B (en) * 2001-09-10 2004-06-01 Ebara Corp Detecting apparatus and device manufacturing method
DE10156275B4 (de) * 2001-11-16 2006-08-03 Leo Elektronenmikroskopie Gmbh Detektoranordnung und Detektionsverfahren
US6853143B2 (en) * 2002-01-09 2005-02-08 Ebara Corporation Electron beam system and method of manufacturing devices using the system
JP2003303564A (ja) * 2002-04-10 2003-10-24 Seiko Instruments Inc 走査型荷電粒子顕微鏡における自動焦点システム
JP3980404B2 (ja) * 2002-05-15 2007-09-26 株式会社荏原製作所 電子線装置及び該装置を用いたデバイス製造方法
US7227141B2 (en) * 2002-07-15 2007-06-05 Ebara Corporation Electron beam apparatus
US7157703B2 (en) * 2002-08-30 2007-01-02 Ebara Corporation Electron beam system
JP4308504B2 (ja) * 2002-11-21 2009-08-05 株式会社荏原製作所 電子線装置及びその装置を用いたデバイス製造方法
JP4642362B2 (ja) * 2003-06-06 2011-03-02 株式会社荏原製作所 基板位置合わせ方法、基板表面検査方法、基板位置決め方法、半導体デバイス製造方法、基板位置合わせ装置及び基板表面検査装置
US7248353B2 (en) * 2003-05-30 2007-07-24 Ebara Corporation Method and apparatus for inspecting samples, and method for manufacturing devices using method and apparatus for inspecting samples
JP4564728B2 (ja) * 2003-07-25 2010-10-20 株式会社日立ハイテクノロジーズ 回路パターンの検査装置
US7235799B2 (en) * 2003-11-28 2007-06-26 Ebara Corporation System and method for evaluation using electron beam and manufacture of devices
EP1679734B1 (en) * 2004-12-30 2010-04-07 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multiple lens assembly and charged particle beam device comprising the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9194826B2 (en) 2007-04-16 2015-11-24 Ebara Corporation Electron beam apparatus and sample observation method using the same
TWI488209B (zh) * 2010-05-07 2015-06-11 Integrated Circuit Testing 具有色散補償的電子光束裝置,及其操作方法
TWI673748B (zh) * 2014-12-22 2019-10-01 美商應用材料股份有限公司 用於檢查基板的設備、用於檢查基板的方法
TWI648535B (zh) * 2016-07-27 2019-01-21 日商紐富來科技股份有限公司 帶電粒子束檢查裝置及帶電粒子束檢查方法

Also Published As

Publication number Publication date
KR20120101157A (ko) 2012-09-12
TW201506390A (zh) 2015-02-16
KR101377106B1 (ko) 2014-03-25
KR20070116602A (ko) 2007-12-10
US20100213370A1 (en) 2010-08-26
KR101279028B1 (ko) 2013-07-02
WO2006088141A1 (ja) 2006-08-24
TWI519779B (zh) 2016-02-01
US9390886B2 (en) 2016-07-12
TW201307833A (zh) 2013-02-16
TWI458967B (zh) 2014-11-01

Similar Documents

Publication Publication Date Title
TW200636232A (en) Electron beam device
EP2282197A3 (en) Particle beam systems and methods
US8503606B2 (en) Low-cost position-sensitive X-ray detector
EP2075595A3 (en) Device and method for detecting orientation of radioactive material
EP2392947A3 (en) Methods and apparatus for e-beam scanning
EP1739413A3 (en) X-ray diffraction apparatus
EP1810180A1 (en) Time-resolved, optical-readout detector for neutron and gamma-ray imaging
TW200612093A (en) Motion rate sensor
JP2010500576A5 (zh)
JP2008278955A5 (zh)
WO2007051092A3 (en) X-ray inspection based on scatter detection
US20170184515A1 (en) Dual-energy detection apparatus, system and method
US20160041110A1 (en) X-ray transmission inspection apparatus and extraneous substance detecting method
EP1757914A3 (en) Imaging detector array with optical readout
WO2004025245A3 (en) Method and apparatus for neutron microscopy with stoichiometric imaging
US8884236B2 (en) Detector with active collimators
EP1923723A3 (en) Cassette type radiation image detector
EP1996077A4 (en) DOUBLE SOURCE SCANNING DETECTION OF IONIZING RADIATION
JP2011530145A5 (zh)
CN104076051A (zh) 荧光x射线分析装置
CN104076053A (zh) 异物检测装置
CN107003290B (zh) 用于色谱样品的光学传感的方法和装置
WO2008041190A3 (en) Methods and systems for detection with front irradiation
CN108028161B (zh) 用于带电粒子束装置的分段式检测器
EP2199831A2 (fr) Dispositif et procédé de détection par imagerie X a très faible dose d'objets portes par un sujet en mouvement

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees