TW200635939A - Tantalum compound, method for producing the same, tantalum-containing thin film and method for forming the same - Google Patents

Tantalum compound, method for producing the same, tantalum-containing thin film and method for forming the same

Info

Publication number
TW200635939A
TW200635939A TW095103537A TW95103537A TW200635939A TW 200635939 A TW200635939 A TW 200635939A TW 095103537 A TW095103537 A TW 095103537A TW 95103537 A TW95103537 A TW 95103537A TW 200635939 A TW200635939 A TW 200635939A
Authority
TW
Taiwan
Prior art keywords
tantalum
same
formula
forming
containing film
Prior art date
Application number
TW095103537A
Other languages
English (en)
Other versions
TWI369360B (en
Inventor
Kenichi Sekimoto
Ken-Ichi Tada
Mayumi Takamori
Tetsu Yamakawa
Taishi Furukawa
Noriaki Oshima
Original Assignee
Tosoh Corp
Sagami Chem Res
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tosoh Corp, Sagami Chem Res filed Critical Tosoh Corp
Publication of TW200635939A publication Critical patent/TW200635939A/zh
Application granted granted Critical
Publication of TWI369360B publication Critical patent/TWI369360B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F19/00—Metal compounds according to more than one of main groups C07F1/00 - C07F17/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW095103537A 2005-02-02 2006-01-27 Tantalum compound, method for producing the same, tantalum-containing thin film, and method for forming the same TWI369360B (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2005026727 2005-02-02
JP2005026728 2005-02-02
JP2005243054 2005-08-24
JP2005243053 2005-08-24
JP2005351086A JP5053543B2 (ja) 2005-02-02 2005-12-05 タンタル化合物、その製造方法、タンタル含有薄膜、及びその形成方法

Publications (2)

Publication Number Publication Date
TW200635939A true TW200635939A (en) 2006-10-16
TWI369360B TWI369360B (en) 2012-08-01

Family

ID=36777127

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095103537A TWI369360B (en) 2005-02-02 2006-01-27 Tantalum compound, method for producing the same, tantalum-containing thin film, and method for forming the same

Country Status (7)

Country Link
US (1) US7592471B2 (zh)
EP (1) EP1852438B1 (zh)
JP (1) JP5053543B2 (zh)
KR (1) KR101215086B1 (zh)
CN (1) CN101111502B (zh)
TW (1) TWI369360B (zh)
WO (1) WO2006082739A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7605469B2 (en) * 2004-06-30 2009-10-20 Intel Corporation Atomic layer deposited tantalum containing adhesion layer
JP2009016782A (ja) * 2007-06-04 2009-01-22 Tokyo Electron Ltd 成膜方法及び成膜装置
TWI425110B (zh) 2007-07-24 2014-02-01 Sigma Aldrich Co 以化學相沉積法製造含金屬薄膜之方法
TWI382987B (zh) * 2007-07-24 2013-01-21 Sigma Aldrich Co 應用於化學相沉積製程的有機金屬前驅物
KR101589777B1 (ko) * 2008-08-01 2016-01-28 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 기재 상에 탄탈-함유 층의 형성 방법
DE102011078928A1 (de) 2011-07-11 2013-01-17 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithografie
KR102627456B1 (ko) * 2015-12-21 2024-01-19 삼성전자주식회사 탄탈럼 화합물과 이를 이용한 박막 형성 방법 및 집적회로 소자의 제조 방법
TW201741490A (zh) * 2016-05-27 2017-12-01 Tes股份有限公司 金屬碳膜的沈積方法
JP6777933B2 (ja) * 2016-12-02 2020-10-28 株式会社高純度化学研究所 化学蒸着用原料及びその製造方法、並びに該化学蒸着用原料を用いて形成されるインジウムを含有する酸化物の膜の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130172A (en) * 1988-10-21 1992-07-14 The Regents Of The University Of California Low temperature organometallic deposition of metals
US6015917A (en) * 1998-01-23 2000-01-18 Advanced Technology Materials, Inc. Tantalum amide precursors for deposition of tantalum nitride on a substrate
US6491987B2 (en) * 1999-05-03 2002-12-10 Guardian Indusries Corp. Process for depositing DLC inclusive coating with surface roughness on substrate
US6743473B1 (en) * 2000-02-16 2004-06-01 Applied Materials, Inc. Chemical vapor deposition of barriers from novel precursors
US6989457B2 (en) * 2003-01-16 2006-01-24 Advanced Technology Materials, Inc. Chemical vapor deposition precursors for deposition of tantalum-based materials

Also Published As

Publication number Publication date
WO2006082739A1 (ja) 2006-08-10
JP2007084522A (ja) 2007-04-05
US7592471B2 (en) 2009-09-22
EP1852438A4 (en) 2008-02-06
CN101111502B (zh) 2011-06-15
TWI369360B (en) 2012-08-01
US20090043119A1 (en) 2009-02-12
EP1852438A1 (en) 2007-11-07
EP1852438B1 (en) 2011-06-01
KR20070101352A (ko) 2007-10-16
JP5053543B2 (ja) 2012-10-17
KR101215086B1 (ko) 2012-12-24
CN101111502A (zh) 2008-01-23

Similar Documents

Publication Publication Date Title
TW200635939A (en) Tantalum compound, method for producing the same, tantalum-containing thin film and method for forming the same
MX2009008858A (es) Derivado de pirazolcarbonitrilo que contiene fluor y el metodo para producirlo y derivado del acido pirazolcarboxilico que contiene fluor obtenido utilizando el derivado de pirazolcarbonitrilo que contiene fluor y el método para producirlo.
TW200643053A (en) Organoaluminum precursor compounds
WO2005087771A3 (de) 5,6-dialkyl-7-amino-triazolopyrimidine, verfahren zu ihrer herstellung und ihre verwendung zur bekämpfung von schadpilzen sowie sie enthaltende mittel
TW200718677A (en) Metal-containing compound, method for producing the same, metal-containing thin film, and method for forming the same
TW200624421A (en) Method for preparing n-phenylpyrazole-1-carboxamides
TW200724528A (en) Carbazole derivative, light-emitting element material obtained by using carbazole derivative, light-emitting element, and electronic device
WO2009041482A1 (ja) アセチレン化合物
WO2008105138A1 (ja) ポリチオウレタン系光学材料用重合触媒、それを含む重合性組成物、それより得られる光学材料、およびその製造方法
GEP20074256B (en) Novel benzothiadiazine, process for their preparation and pharmaceutical compositions containing
TW200619201A (en) Process for the preparation of pyrazoles
TW200420744A (en) Ruthenium compound and process for producing metallic ruthenium film
WO2005087770A3 (de) 5, 6-dihydrocarbyl-7-amino-triazolopyrimidine, verfahren zu ihrer herstellung und ihre verwendung zur bekämpfung von schadpilzen sowie sie enthaltende mittel
TW200619413A (en) Metal compound, thin film-forming material, and method for producing thin film
TW200720321A (en) Fluorine-containing compound, method for producing thereof, its use, and method for reducing surface tension and method for modifying resin surface using thereof
TW200740823A (en) Oxadiazole-substituted Sym-triindole derivative and organic el element employing the same
WO2009063639A1 (ja) エッチングマスク、エッチングマスク付き基材、微細加工品および微細加工品の製造方法
TW200640928A (en) 5,6-Dialkyl-7-aminoazolopyrimidines, their preparation and their use for controlling harmful fungi, and compositions comprising these compounds
MX2009007029A (es) Derivado de acil-3-aminoacrilonitrilo 2-fluorado y metodo para producir el mismo.
MX2009004928A (es) Metodo para la produccion del derivado de 2-alquilo-3-aminotiofeno .
TW200704587A (en) Method for producing silicon with high purity
TW200609232A (en) 1,4-dithienylbenzene derivatives
MX2007009506A (es) Quimicos de aroma con base de schiff y producto de adicion michael.
MXPA04003568A (es) Aralquil-tetrahidro-piridinas su preparacion y composiciones farmaceuticas que contienen las mismas.
WO2009008287A1 (ja) ４－（トリクロロメチルチオ）アニリン類およびその製造方法、ならびに４－（トリフルオロメチルチオ）アニリン類の製造方法