TW200629270A - Programmable phase-change memory and method therefor - Google Patents

Programmable phase-change memory and method therefor

Info

Publication number
TW200629270A
TW200629270A TW094143688A TW94143688A TW200629270A TW 200629270 A TW200629270 A TW 200629270A TW 094143688 A TW094143688 A TW 094143688A TW 94143688 A TW94143688 A TW 94143688A TW 200629270 A TW200629270 A TW 200629270A
Authority
TW
Taiwan
Prior art keywords
contiguous layer
phase change
electrical current
change material
region
Prior art date
Application number
TW094143688A
Other languages
English (en)
Inventor
Hans Marc Bert Boeve
Nicolaas Lambert
Victor Martinus Gerardus Acht
Karen Attenborough
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of TW200629270A publication Critical patent/TW200629270A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/861—Thermal details
    • H10N70/8613—Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides

Landscapes

  • Semiconductor Memories (AREA)
TW094143688A 2004-12-13 2005-12-09 Programmable phase-change memory and method therefor TW200629270A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US59312904P 2004-12-13 2004-12-13

Publications (1)

Publication Number Publication Date
TW200629270A true TW200629270A (en) 2006-08-16

Family

ID=36228712

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094143688A TW200629270A (en) 2004-12-13 2005-12-09 Programmable phase-change memory and method therefor

Country Status (8)

Country Link
US (2) US8208293B2 (zh)
EP (1) EP1829110B1 (zh)
JP (1) JP2008523605A (zh)
KR (1) KR20070087098A (zh)
CN (1) CN101185167A (zh)
AT (1) ATE545957T1 (zh)
TW (1) TW200629270A (zh)
WO (1) WO2006064441A2 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1829110B1 (en) * 2004-12-13 2012-02-15 Nxp B.V. Programmable phase-change memory and method therefor
JP4625822B2 (ja) 2007-03-16 2011-02-02 株式会社東芝 半導体記憶装置及びその製造方法
US20090180313A1 (en) * 2008-01-15 2009-07-16 Wim Deweerd Chalcogenide anti-fuse
KR101007562B1 (ko) * 2008-05-20 2011-01-14 주식회사 하이닉스반도체 저항성 메모리 소자 및 그 제조 방법
CN110335941B (zh) * 2019-07-03 2023-08-18 芯盟科技有限公司 相变存储器的结构及其形成方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4845533A (en) 1986-08-22 1989-07-04 Energy Conversion Devices, Inc. Thin film electrical devices with amorphous carbon electrodes and method of making same
US5166758A (en) 1991-01-18 1992-11-24 Energy Conversion Devices, Inc. Electrically erasable phase change memory
US6172902B1 (en) * 1998-08-12 2001-01-09 Ecole Polytechnique Federale De Lausanne (Epfl) Non-volatile magnetic random access memory
WO2003073512A1 (en) 2002-02-22 2003-09-04 Ovonyx, Inc. Single level metal memory cell using chalcogenide cladding
US6707087B2 (en) * 2002-06-21 2004-03-16 Hewlett-Packard Development Company, L.P. Structure of chalcogenide memory element
US6766264B2 (en) 2002-08-02 2004-07-20 Sun Microsystems, Inc. Method and apparatus for calibrating parameters to be used in a digital circuit simulation
US6850432B2 (en) * 2002-08-20 2005-02-01 Macronix International Co., Ltd. Laser programmable electrically readable phase-change memory method and device
KR100491978B1 (ko) * 2003-04-12 2005-05-27 한국전자통신연구원 저 전력 동작이 가능한 상변화 메모리 소자 및 그 제조 방법
JP4634014B2 (ja) * 2003-05-22 2011-02-16 株式会社日立製作所 半導体記憶装置
KR100504700B1 (ko) * 2003-06-04 2005-08-03 삼성전자주식회사 고집적 상변환 램
EP1829110B1 (en) * 2004-12-13 2012-02-15 Nxp B.V. Programmable phase-change memory and method therefor

Also Published As

Publication number Publication date
WO2006064441A2 (en) 2006-06-22
CN101185167A (zh) 2008-05-21
US20120230100A1 (en) 2012-09-13
JP2008523605A (ja) 2008-07-03
US20100039856A1 (en) 2010-02-18
US8208293B2 (en) 2012-06-26
US8503226B2 (en) 2013-08-06
WO2006064441A3 (en) 2006-11-16
KR20070087098A (ko) 2007-08-27
EP1829110A2 (en) 2007-09-05
ATE545957T1 (de) 2012-03-15
EP1829110B1 (en) 2012-02-15

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