TW200623428A - Non-volatile memory with erase gate on isolation zones - Google Patents

Non-volatile memory with erase gate on isolation zones

Info

Publication number
TW200623428A
TW200623428A TW094119323A TW94119323A TW200623428A TW 200623428 A TW200623428 A TW 200623428A TW 094119323 A TW094119323 A TW 094119323A TW 94119323 A TW94119323 A TW 94119323A TW 200623428 A TW200623428 A TW 200623428A
Authority
TW
Taiwan
Prior art keywords
gate
erase
volatile memory
erase gate
floating gate
Prior art date
Application number
TW094119323A
Other languages
English (en)
Inventor
Schaijk Robertus Theodorus Fransiscus Van
Duuren Michiel Jos Van
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of TW200623428A publication Critical patent/TW200623428A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
TW094119323A 2004-06-15 2005-06-10 Non-volatile memory with erase gate on isolation zones TW200623428A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP04102703 2004-06-15

Publications (1)

Publication Number Publication Date
TW200623428A true TW200623428A (en) 2006-07-01

Family

ID=34970204

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094119323A TW200623428A (en) 2004-06-15 2005-06-10 Non-volatile memory with erase gate on isolation zones

Country Status (6)

Country Link
US (2) US7709879B2 (zh)
EP (1) EP1759421A1 (zh)
JP (1) JP2008503080A (zh)
CN (1) CN100505316C (zh)
TW (1) TW200623428A (zh)
WO (1) WO2005124874A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI394230B (zh) * 2009-07-30 2013-04-21 Winbond Electronics Corp 半導體元件之製作方法

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8022489B2 (en) * 2005-05-20 2011-09-20 Macronix International Co., Ltd. Air tunnel floating gate memory cell
JP4560820B2 (ja) * 2006-06-20 2010-10-13 エルピーダメモリ株式会社 半導体装置の製造方法
KR100954116B1 (ko) * 2006-11-06 2010-04-23 주식회사 하이닉스반도체 반도체 소자의 리세스패턴 형성방법
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
JP2010050208A (ja) * 2008-08-20 2010-03-04 Renesas Technology Corp 半導体記憶装置
KR101128716B1 (ko) * 2009-11-17 2012-03-23 매그나칩 반도체 유한회사 반도체 장치
US20120153373A1 (en) * 2010-12-16 2012-06-21 Nanya Technology Corporation Gate structure
CN103187275B (zh) * 2011-12-28 2015-12-02 无锡华润上华科技有限公司 闪存芯片的制作方法
CN102569363B (zh) * 2012-02-15 2016-03-23 清华大学 一种耐高压隧穿晶体管及其制备方法
US20140124880A1 (en) 2012-11-06 2014-05-08 International Business Machines Corporation Magnetoresistive random access memory
US8750033B2 (en) 2012-11-06 2014-06-10 International Business Machines Corporation Reading a cross point cell array
US20140183614A1 (en) * 2013-01-03 2014-07-03 United Microelectronics Corp. Semiconductor device
US8772108B1 (en) * 2013-02-25 2014-07-08 Globalfoundries Singapore Pte. Ltd. Multi-time programmable non-volatile memory
US8928060B2 (en) 2013-03-14 2015-01-06 Taiwan Semiconductor Manufacturing Co., Ltd. Architecture to improve cell size for compact array of split gate flash cell
CN104779209B (zh) * 2014-01-13 2018-07-20 中芯国际集成电路制造(上海)有限公司 闪存的制造方法
US9397179B1 (en) 2015-02-17 2016-07-19 Samsung Electronics Co., Ltd. Semiconductor device
US9825046B2 (en) * 2016-01-05 2017-11-21 Taiwan Semiconductor Manufacturing Co., Ltd. Flash memory device having high coupling ratio
US9899395B1 (en) * 2016-07-26 2018-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for manufacturing the same
TWI698003B (zh) * 2018-06-15 2020-07-01 卡比科技有限公司 非揮發性記憶體裝置
DE102019112410A1 (de) * 2018-09-27 2020-04-02 Taiwan Semiconductor Manufacturing Co. Ltd. Bauelementbereich-Layout für eingebetteten Flash-Speicher
US10847378B2 (en) 2018-11-01 2020-11-24 United Microelectronics Corp. Semiconductor device and method for planarizing the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4561004A (en) * 1979-10-26 1985-12-24 Texas Instruments High density, electrically erasable, floating gate memory cell
US5332914A (en) * 1988-02-05 1994-07-26 Emanuel Hazani EEPROM cell structure and architecture with increased capacitance and with programming and erase terminals shared between several cells
US5331188A (en) * 1992-02-25 1994-07-19 International Business Machines Corporation Non-volatile DRAM cell
US6272050B1 (en) * 1999-05-28 2001-08-07 Vlsi Technology, Inc. Method and apparatus for providing an embedded flash-EEPROM technology
US6204126B1 (en) * 2000-02-18 2001-03-20 Taiwan Semiconductor Manufacturing Company Method to fabricate a new structure with multi-self-aligned for split-gate flash
US6420232B1 (en) * 2000-11-14 2002-07-16 Silicon-Based Technology Corp. Methods of fabricating a scalable split-gate flash memory device having embedded triple-sides erase cathodes
US6747310B2 (en) * 2002-10-07 2004-06-08 Actrans System Inc. Flash memory cells with separated self-aligned select and erase gates, and process of fabrication
US6995060B2 (en) * 2003-03-19 2006-02-07 Promos Technologies Inc. Fabrication of integrated circuit elements in structures with protruding features

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI394230B (zh) * 2009-07-30 2013-04-21 Winbond Electronics Corp 半導體元件之製作方法

Also Published As

Publication number Publication date
US8168524B2 (en) 2012-05-01
WO2005124874A1 (en) 2005-12-29
US20080203463A1 (en) 2008-08-28
CN1969392A (zh) 2007-05-23
CN100505316C (zh) 2009-06-24
EP1759421A1 (en) 2007-03-07
JP2008503080A (ja) 2008-01-31
US20100173488A1 (en) 2010-07-08
US7709879B2 (en) 2010-05-04

Similar Documents

Publication Publication Date Title
TW200623428A (en) Non-volatile memory with erase gate on isolation zones
TWI317947B (en) Nand non-volatile storage device and methods of using and making the same
US8320184B2 (en) Method of programming nonvolatile semiconductor memory device
TW200715574A (en) SONOS memory cell having high-K dielectric
WO2004044921A3 (en) Nonvolatile memory array using unified cell structure in divided-well allowing write operation with no disturb
TW200715571A (en) Semiconductor device
TW200701441A (en) Non-volatile memory and manufacturing method and operating method thereof
TW360980B (en) Single transistor EEPROM memory device
WO2002103800A3 (en) Integration of two memory types
TW200638517A (en) Method for fabricating semiconductor device
TWI263342B (en) Non-volatile memory and manufacturing method and operating method thereof
TW200643952A (en) Bidirectional split gate nand flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing
TW200741987A (en) Method for operating a single-poly single-transistor non-volatile memory cell
TW200518281A (en) Method for fabricating flash memory device and structure thereof
WO2008004179A3 (en) Non-volatile memory and-array and method for operating the game
TW200746397A (en) Methods for erasing memory devices and multi-level programming memory device
AU2003265846A1 (en) Contactless uniform-tunneling separate p-well (cusp) non-volatile memory array architecture, fabrication and operation
TW200709395A (en) Non-volatile memory and operatting method thereof
TW200506948A (en) Method for operating nor-array memory module composed of p-type memory cells
TW200802816A (en) Non-volatile memory and manufacturing method thereof
WO2008028129A3 (en) Non-volatile memory cell in standard cmos process
TW200710853A (en) Method for programming a memory device
TW200634821A (en) Method for operating p-channel memory
GB2349275A (en) Eeprom cell with tunneling across entire separated channels
TW200723283A (en) Erasing method of non-volatile memory