TW200623403A - Active pixel sensor cell with integrating varactor - Google Patents

Active pixel sensor cell with integrating varactor

Info

Publication number
TW200623403A
TW200623403A TW094118808A TW94118808A TW200623403A TW 200623403 A TW200623403 A TW 200623403A TW 094118808 A TW094118808 A TW 094118808A TW 94118808 A TW94118808 A TW 94118808A TW 200623403 A TW200623403 A TW 200623403A
Authority
TW
Taiwan
Prior art keywords
photodiode
subexposure
interval
reset
exposure
Prior art date
Application number
TW094118808A
Other languages
English (en)
Inventor
Peter J Hopper
Philipp Lindorfer
Mark W Poulter
Yuri Mirgorodski
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of TW200623403A publication Critical patent/TW200623403A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/587—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
TW094118808A 2004-06-08 2005-06-07 Active pixel sensor cell with integrating varactor TW200623403A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/863,058 US7102117B2 (en) 2004-06-08 2004-06-08 Active pixel sensor cell with integrating varactor and method for using such cell

Publications (1)

Publication Number Publication Date
TW200623403A true TW200623403A (en) 2006-07-01

Family

ID=34972237

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094118808A TW200623403A (en) 2004-06-08 2005-06-07 Active pixel sensor cell with integrating varactor

Country Status (7)

Country Link
US (2) US7102117B2 (zh)
EP (1) EP1754258A1 (zh)
JP (1) JP2008502168A (zh)
KR (1) KR20070034485A (zh)
CN (1) CN1965410A (zh)
TW (1) TW200623403A (zh)
WO (1) WO2005124867A1 (zh)

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US8487231B2 (en) * 2007-03-05 2013-07-16 Arokia Nathan Sensor pixels, arrays and array systems and methods therefor
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KR101294445B1 (ko) * 2011-04-13 2013-08-07 엘지이노텍 주식회사 픽셀, 픽셀 어레이, 픽셀 어레이를 포함하는 이미지센서 및 픽셀 어레이의 구동방법
KR101241466B1 (ko) * 2011-04-13 2013-03-11 엘지이노텍 주식회사 픽셀 어레이, 이를 포함하는 이미지센서 및 그 구동 방법
US9723233B2 (en) 2012-04-18 2017-08-01 Brightway Vision Ltd. Controllable gated sensor
US9293500B2 (en) 2013-03-01 2016-03-22 Apple Inc. Exposure control for image sensors
US9276031B2 (en) 2013-03-04 2016-03-01 Apple Inc. Photodiode with different electric potential regions for image sensors
US9041837B2 (en) 2013-03-05 2015-05-26 Apple Inc. Image sensor with reduced blooming
US9741754B2 (en) 2013-03-06 2017-08-22 Apple Inc. Charge transfer circuit with storage nodes in image sensors
US9549099B2 (en) 2013-03-12 2017-01-17 Apple Inc. Hybrid image sensor
US9319611B2 (en) 2013-03-14 2016-04-19 Apple Inc. Image sensor with flexible pixel summing
US9596423B1 (en) 2013-11-21 2017-03-14 Apple Inc. Charge summing in an image sensor
US9596420B2 (en) 2013-12-05 2017-03-14 Apple Inc. Image sensor having pixels with different integration periods
US9473706B2 (en) 2013-12-09 2016-10-18 Apple Inc. Image sensor flicker detection
US10285626B1 (en) 2014-02-14 2019-05-14 Apple Inc. Activity identification using an optical heart rate monitor
US9277144B2 (en) 2014-03-12 2016-03-01 Apple Inc. System and method for estimating an ambient light condition using an image sensor and field-of-view compensation
US9232150B2 (en) 2014-03-12 2016-01-05 Apple Inc. System and method for estimating an ambient light condition using an image sensor
US9584743B1 (en) 2014-03-13 2017-02-28 Apple Inc. Image sensor with auto-focus and pixel cross-talk compensation
US9497397B1 (en) 2014-04-08 2016-11-15 Apple Inc. Image sensor with auto-focus and color ratio cross-talk comparison
US9538106B2 (en) 2014-04-25 2017-01-03 Apple Inc. Image sensor having a uniform digital power signature
US9686485B2 (en) 2014-05-30 2017-06-20 Apple Inc. Pixel binning in an image sensor
US9526468B2 (en) 2014-09-09 2016-12-27 General Electric Company Multiple frame acquisition for exposure control in X-ray medical imagers
CN105681695B (zh) * 2014-11-17 2018-12-04 北京计算机技术及应用研究所 一种cmos图像传感器像素电路及其控制方法
US10057526B2 (en) * 2015-11-13 2018-08-21 Pixart Imaging Inc. Pixel circuit with low power consumption, image system including the same and operating method thereof
US9912883B1 (en) 2016-05-10 2018-03-06 Apple Inc. Image sensor with calibrated column analog-to-digital converters
CN110634902B (zh) * 2016-06-13 2021-08-17 深圳大学 一种超高速快门半导体影像传感器
JP6818875B2 (ja) 2016-09-23 2021-01-20 アップル インコーポレイテッドＡｐｐｌｅ Ｉｎｃ． 積層背面照射型ｓｐａｄアレイ
CN110352593B (zh) * 2016-12-19 2021-10-29 Bae系统成像解决方案有限公司 降低暗电流的影响的全局快门装置
US10656251B1 (en) 2017-01-25 2020-05-19 Apple Inc. Signal acquisition in a SPAD detector
CN110235024B (zh) 2017-01-25 2022-10-28 苹果公司 具有调制灵敏度的spad检测器
US10962628B1 (en) 2017-01-26 2021-03-30 Apple Inc. Spatial temporal weighting in a SPAD detector
US10622538B2 (en) 2017-07-18 2020-04-14 Apple Inc. Techniques for providing a haptic output and sensing a haptic input using a piezoelectric body
US10440301B2 (en) 2017-09-08 2019-10-08 Apple Inc. Image capture device, pixel, and method providing improved phase detection auto-focus performance
CN108282621B (zh) * 2018-03-01 2021-02-26 思特威(上海)电子科技有限公司 降低led光源闪烁影响的图像传感器像素结构及成像系统
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US11019294B2 (en) 2018-07-18 2021-05-25 Apple Inc. Seamless readout mode transitions in image sensors
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Also Published As

Publication number Publication date
JP2008502168A (ja) 2008-01-24
EP1754258A1 (en) 2007-02-21
US7262401B2 (en) 2007-08-28
US7102117B2 (en) 2006-09-05
US20050269482A1 (en) 2005-12-08
WO2005124867A1 (en) 2005-12-29
US20060266925A1 (en) 2006-11-30
CN1965410A (zh) 2007-05-16
KR20070034485A (ko) 2007-03-28

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