TW200622611A - Memory management device and memory device - Google Patents

Memory management device and memory device

Info

Publication number
TW200622611A
TW200622611A TW094129671A TW94129671A TW200622611A TW 200622611 A TW200622611 A TW 200622611A TW 094129671 A TW094129671 A TW 094129671A TW 94129671 A TW94129671 A TW 94129671A TW 200622611 A TW200622611 A TW 200622611A
Authority
TW
Taiwan
Prior art keywords
data
memory
management device
erased
response
Prior art date
Application number
TW094129671A
Other languages
English (en)
Other versions
TWI310901B (zh
Inventor
Takaya Suda
Hiroaki Muraoka
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200622611A publication Critical patent/TW200622611A/zh
Application granted granted Critical
Publication of TWI310901B publication Critical patent/TWI310901B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups

Landscapes

  • Memory System (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
TW094129671A 2004-09-13 2005-08-30 Memory management device and memory device TW200622611A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004265806A JP4192129B2 (ja) 2004-09-13 2004-09-13 メモリ管理装置

Publications (2)

Publication Number Publication Date
TW200622611A true TW200622611A (en) 2006-07-01
TWI310901B TWI310901B (zh) 2009-06-11

Family

ID=36035422

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094129671A TW200622611A (en) 2004-09-13 2005-08-30 Memory management device and memory device

Country Status (4)

Country Link
US (3) US7057942B2 (zh)
JP (1) JP4192129B2 (zh)
CN (1) CN100412822C (zh)
TW (1) TW200622611A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7890693B2 (en) 2007-01-25 2011-02-15 Genesys Logic, Inc. Flash translation layer apparatus
TWI512459B (zh) * 2007-02-01 2015-12-11 Samsung Electronics Co Ltd 協同記憶體管理與其方法

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7644239B2 (en) 2004-05-03 2010-01-05 Microsoft Corporation Non-volatile memory cache performance improvement
JP4192129B2 (ja) 2004-09-13 2008-12-03 株式会社東芝 メモリ管理装置
US7490197B2 (en) 2004-10-21 2009-02-10 Microsoft Corporation Using external memory devices to improve system performance
US7457909B2 (en) * 2005-01-14 2008-11-25 Angelo Di Sena Controlling operation of flash memories
KR100666174B1 (ko) * 2005-04-27 2007-01-09 삼성전자주식회사 3-레벨 불휘발성 반도체 메모리 장치 및 이에 대한구동방법
US7634494B2 (en) * 2005-05-03 2009-12-15 Intel Corporation Flash memory directory virtualization
US20060253643A1 (en) * 2005-05-04 2006-11-09 Delkin Devices, Inc. Memory with isolated master boot record
JP4751163B2 (ja) * 2005-09-29 2011-08-17 株式会社東芝 メモリシステム
US8914557B2 (en) 2005-12-16 2014-12-16 Microsoft Corporation Optimizing write and wear performance for a memory
KR101490327B1 (ko) 2006-12-06 2015-02-05 퓨전-아이오, 인크. 뱅크 인터리브를 이용한 솔리드-스테이트 스토리지의 명령 관리 장치, 시스템 및 방법
KR100885783B1 (ko) * 2007-01-23 2009-02-26 주식회사 하이닉스반도체 플래시 메모리 장치 및 동작 방법
US7791952B2 (en) 2007-01-30 2010-09-07 Micron Technology, Inc. Memory device architectures and operation
US7804718B2 (en) * 2007-03-07 2010-09-28 Mosaid Technologies Incorporated Partial block erase architecture for flash memory
US7719889B2 (en) * 2007-06-25 2010-05-18 Sandisk Corporation Methods of programming multilevel cell nonvolatile memory
KR101391881B1 (ko) * 2007-10-23 2014-05-07 삼성전자주식회사 멀티-비트 플래시 메모리 장치 및 그것의 프로그램 및 읽기방법
JP2009118212A (ja) * 2007-11-07 2009-05-28 Seiko Epson Corp 画像読取装置および画像読取方法
JP5142685B2 (ja) * 2007-11-29 2013-02-13 株式会社東芝 メモリシステム
US8631203B2 (en) 2007-12-10 2014-01-14 Microsoft Corporation Management of external memory functioning as virtual cache
TW200929237A (en) * 2007-12-21 2009-07-01 Winbond Electronics Corp Memory architecture and configuration method thereof
US20090222613A1 (en) * 2008-02-29 2009-09-03 Kabushiki Kaisha Toshiba Information processing apparatus and nonvolatile semiconductor memory drive
US20090222614A1 (en) * 2008-02-29 2009-09-03 Kabushiki Kaisha Toshiba Information processing apparatus and nonvolatile semiconductor memory drive
JP5032371B2 (ja) * 2008-03-01 2012-09-26 株式会社東芝 メモリシステム
US8364930B2 (en) 2008-03-07 2013-01-29 Kabushiki Kaisha Toshiba Information processing apparatus and storage drive adapted to perform fault analysis by maintenance of tracing information
US20090228640A1 (en) * 2008-03-07 2009-09-10 Kabushiki Kaisha Toshiba Information processing apparatus and non-volatile semiconductor memory drive
TWI370969B (en) * 2008-07-09 2012-08-21 Phison Electronics Corp Data accessing method, and storage system and controller using the same
US8032707B2 (en) 2008-09-15 2011-10-04 Microsoft Corporation Managing cache data and metadata
US9032151B2 (en) 2008-09-15 2015-05-12 Microsoft Technology Licensing, Llc Method and system for ensuring reliability of cache data and metadata subsequent to a reboot
US7953774B2 (en) 2008-09-19 2011-05-31 Microsoft Corporation Aggregation of write traffic to a data store
US20100262979A1 (en) * 2009-04-08 2010-10-14 Google Inc. Circular command queues for communication between a host and a data storage device
US8595572B2 (en) 2009-04-08 2013-11-26 Google Inc. Data storage device with metadata command
KR20120132820A (ko) * 2011-05-30 2012-12-10 삼성전자주식회사 스토리지 디바이스, 스토리지 시스템 및 스토리지 디바이스의 가상화 방법
FR3006804A1 (fr) * 2013-06-05 2014-12-12 St Microelectronics Rousset Procede d’effacement par bloc d’une memoire de type eeprom effacable par page
US10936199B2 (en) * 2018-07-17 2021-03-02 Silicon Motion, Inc. Flash controllers, methods, and corresponding storage devices capable of rapidly/fast generating or updating contents of valid page count table
US10593412B2 (en) 2018-07-19 2020-03-17 Micron Technology, Inc. Using a status indicator in a memory sub-system to detect an event
JP7225991B2 (ja) * 2019-03-22 2023-02-21 富士フイルムビジネスイノベーション株式会社 情報処理装置
JP2023019261A (ja) * 2021-07-29 2023-02-09 Ｎｅｃプラットフォームズ株式会社 メモリ制御装置、メモリ制御回路、メモリ制御方法およびメモリ制御プログラム

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5860124A (en) * 1996-09-30 1999-01-12 Intel Corporation Method for performing a continuous over-write of a file in nonvolatile memory
JP3954698B2 (ja) 1997-08-29 2007-08-08 パナソニック コミュニケーションズ株式会社 メモリー制御装置
JP4085478B2 (ja) * 1998-07-28 2008-05-14 ソニー株式会社 記憶媒体及び電子機器システム
KR100399034B1 (ko) * 2000-05-02 2003-09-22 한국과학기술원 효율적 메모리 셀 어레이 관리 방법
JP4812192B2 (ja) * 2001-07-27 2011-11-09 パナソニック株式会社 フラッシュメモリ装置、及び、それに記憶されたデータのマージ方法
GB0123422D0 (en) * 2001-09-28 2001-11-21 Memquest Ltd Improved memory controller
US6859856B2 (en) * 2001-10-23 2005-02-22 Flex P Industries Sdn. Bhd Method and system for a compact flash memory controller
US6798711B2 (en) * 2002-03-19 2004-09-28 Micron Technology, Inc. Memory with address management
JP3699942B2 (ja) 2002-03-25 2005-09-28 株式会社東芝 メモリ管理方式およびメモリ管理装置
US7171536B2 (en) * 2002-10-28 2007-01-30 Sandisk Corporation Unusable block management within a non-volatile memory system
JP4188744B2 (ja) * 2003-04-08 2008-11-26 株式会社ルネサステクノロジ メモリカード
JP4157501B2 (ja) 2004-06-30 2008-10-01 株式会社東芝 記憶装置
JP4192129B2 (ja) * 2004-09-13 2008-12-03 株式会社東芝 メモリ管理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7890693B2 (en) 2007-01-25 2011-02-15 Genesys Logic, Inc. Flash translation layer apparatus
TWI512459B (zh) * 2007-02-01 2015-12-11 Samsung Electronics Co Ltd 協同記憶體管理與其方法

Also Published As

Publication number Publication date
US7057942B2 (en) 2006-06-06
CN100412822C (zh) 2008-08-20
TWI310901B (zh) 2009-06-11
US7227788B2 (en) 2007-06-05
US20070223286A1 (en) 2007-09-27
JP2006079543A (ja) 2006-03-23
US7388792B2 (en) 2008-06-17
US20060059295A1 (en) 2006-03-16
JP4192129B2 (ja) 2008-12-03
US20060187738A1 (en) 2006-08-24
CN1749974A (zh) 2006-03-22

Similar Documents

Publication Publication Date Title
TW200622611A (en) Memory management device and memory device
TW200834304A (en) Non-volatile semiconductor memory system and data write method thereof
TW200620305A (en) Memory card, semiconductor device, and method of controlling semiconductor memory
TW200731065A (en) Non-volatile memory with scheduled reclaim operations
DE602006019571D1 (de) Speicherschnittstelle für flüchtige und nichtflüchtige speicherbausteine
TW200703360A (en) Page buffer architecture for programming, erasing and reading nanoscale resistive memory devices
ATE478422T1 (de) Speicherblocklöschung in einer flash-speicher- vorrichtung
ATE546782T1 (de) Speichersystem
TW200601040A (en) Management of non-volatile memory systems having large erase blocks
TW200620311A (en) Self-adaptive program delay circuitry for programmable memories
TW200701237A (en) Reference scheme for a non-volatile semiconductor memory device
ATE438915T1 (de) Tragbare datenspeichereinrichtung mit einer speicheradressen-abbildungstabelle
TW200709210A (en) Memory controller, non-volatile memory device, non-volatile memory system, and data writing method
ATE512441T1 (de) Bereitstellung von energiereduktion bei der datenspeicherung in einem speicher
WO2007028026A3 (en) Flash drive fast wear leveling
DE602007010129D1 (de) Icherleistung mithilfe der hintergrundlöschung
ATE534076T1 (de) Speichersystem
DE602006015930D1 (de) Löschen nichtflüchtiger speicher unter verwendung individueller überprüfung und zusätzlichen löschens von untergruppen von speicherzellen
WO2007019198A3 (en) Non-volatile memory with scheduled reclaim operations
TW200731267A (en) Semiconductor memory device controlling program voltage according to the number of cells to be programmed and method of programming the same
ATE545934T1 (de) Speichersystem
TW200715293A (en) Memory device and method for operating the same
WO2008050337A3 (en) Erase history-based flash writing method
TW200617963A (en) Method and apparatus for information setting in a non-volatile memory device
TW200732918A (en) Method and system for accessing non-volatile storage devices

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees