TW200620705A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- TW200620705A TW200620705A TW094128041A TW94128041A TW200620705A TW 200620705 A TW200620705 A TW 200620705A TW 094128041 A TW094128041 A TW 094128041A TW 94128041 A TW94128041 A TW 94128041A TW 200620705 A TW200620705 A TW 200620705A
- Authority
- TW
- Taiwan
- Prior art keywords
- light emitting
- substrate
- emitting device
- semiconductor light
- emitting layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004243981A JP2006066449A (ja) | 2004-08-24 | 2004-08-24 | 半導体発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200620705A true TW200620705A (en) | 2006-06-16 |
TWI270221B TWI270221B (en) | 2007-01-01 |
Family
ID=35941794
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094128041A TWI270221B (en) | 2004-08-24 | 2005-08-17 | Semiconductor light emitting device |
Country Status (3)
Country | Link |
---|---|
US (1) | US20060043399A1 (zh) |
JP (1) | JP2006066449A (zh) |
TW (1) | TWI270221B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI455377B (zh) * | 2010-04-23 | 2014-10-01 | Everlight Electronics Co Ltd | 發光二極體結構及其製作方法 |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60042187D1 (de) * | 1999-06-09 | 2009-06-25 | Toshiba Kawasaki Kk | Bond-typ Halbleitersubstrat, lichtemittierendes Halbleiterbauelement und Herstellungsverfahren |
US20080149949A1 (en) * | 2006-12-11 | 2008-06-26 | The Regents Of The University Of California | Lead frame for transparent and mirrorless light emitting diodes |
JP2007103725A (ja) * | 2005-10-05 | 2007-04-19 | Toshiba Corp | 半導体発光装置 |
JP5032017B2 (ja) * | 2005-10-28 | 2012-09-26 | 株式会社東芝 | 半導体発光素子及びその製造方法並びに半導体発光装置 |
JP2007258415A (ja) * | 2006-03-23 | 2007-10-04 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびその製造方法 |
JP5286641B2 (ja) * | 2006-03-29 | 2013-09-11 | 日亜化学工業株式会社 | 半導体発光素子及び半導体発光装置 |
US8026115B2 (en) * | 2006-11-17 | 2011-09-27 | 3M Innovative Properties Company | Optical bonding composition for LED light source |
WO2008064068A2 (en) * | 2006-11-17 | 2008-05-29 | 3M Innovative Properties Company | Planarized led with optical extractor |
CN101536202A (zh) * | 2006-11-17 | 2009-09-16 | 3M创新有限公司 | 高效发光制品以及形成该高效发光制品的方法 |
JP4561732B2 (ja) * | 2006-11-20 | 2010-10-13 | トヨタ自動車株式会社 | 移動体位置測位装置 |
EP2087532A1 (en) * | 2006-11-20 | 2009-08-12 | 3M Innovative Properties Company | Optical bonding composition for led light source |
JP2010512662A (ja) * | 2006-12-11 | 2010-04-22 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 透明発光ダイオード |
JP2008172040A (ja) * | 2007-01-12 | 2008-07-24 | Sony Corp | 半導体発光素子、半導体発光素子の製造方法、バックライト、ディスプレイおよび電子機器 |
JP5032171B2 (ja) * | 2007-03-26 | 2012-09-26 | 株式会社東芝 | 半導体発光素子およびその製造方法ならびに発光装置 |
JP5634003B2 (ja) * | 2007-09-29 | 2014-12-03 | 日亜化学工業株式会社 | 発光装置 |
US20090173956A1 (en) * | 2007-12-14 | 2009-07-09 | Philips Lumileds Lighting Company, Llc | Contact for a semiconductor light emitting device |
US8481357B2 (en) * | 2008-03-08 | 2013-07-09 | Crystal Solar Incorporated | Thin film solar cell with ceramic handling layer |
US8278679B2 (en) * | 2008-04-29 | 2012-10-02 | Tsmc Solid State Lighting Ltd. | LED device with embedded top electrode |
JP5024247B2 (ja) | 2008-09-12 | 2012-09-12 | 日立電線株式会社 | 発光素子 |
KR100974784B1 (ko) * | 2009-03-10 | 2010-08-06 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
DE102010023343A1 (de) | 2010-06-10 | 2011-12-15 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterkörper, Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterkörpers und strahlungsemittierendes Halbleiterbauelement |
CN107210335B (zh) | 2015-01-30 | 2019-07-05 | 欧司朗光电半导体有限公司 | 用于制造半导体组件的方法及半导体组件 |
JP2018006535A (ja) * | 2016-06-30 | 2018-01-11 | ウシオ電機株式会社 | 半導体発光素子 |
US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5917202A (en) * | 1995-12-21 | 1999-06-29 | Hewlett-Packard Company | Highly reflective contacts for light emitting semiconductor devices |
DE60042187D1 (de) * | 1999-06-09 | 2009-06-25 | Toshiba Kawasaki Kk | Bond-typ Halbleitersubstrat, lichtemittierendes Halbleiterbauelement und Herstellungsverfahren |
US6784462B2 (en) * | 2001-12-13 | 2004-08-31 | Rensselaer Polytechnic Institute | Light-emitting diode with planar omni-directional reflector |
TW577178B (en) * | 2002-03-04 | 2004-02-21 | United Epitaxy Co Ltd | High efficient reflective metal layer of light emitting diode |
-
2004
- 2004-08-24 JP JP2004243981A patent/JP2006066449A/ja active Pending
-
2005
- 2005-08-17 TW TW094128041A patent/TWI270221B/zh not_active IP Right Cessation
- 2005-08-23 US US11/208,654 patent/US20060043399A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI455377B (zh) * | 2010-04-23 | 2014-10-01 | Everlight Electronics Co Ltd | 發光二極體結構及其製作方法 |
Also Published As
Publication number | Publication date |
---|---|
US20060043399A1 (en) | 2006-03-02 |
TWI270221B (en) | 2007-01-01 |
JP2006066449A (ja) | 2006-03-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |