TW200620320A - Memory module, memory unit, and hub with non-periodic clock and methods of using the same - Google Patents
Memory module, memory unit, and hub with non-periodic clock and methods of using the sameInfo
- Publication number
- TW200620320A TW200620320A TW094115446A TW94115446A TW200620320A TW 200620320 A TW200620320 A TW 200620320A TW 094115446 A TW094115446 A TW 094115446A TW 94115446 A TW94115446 A TW 94115446A TW 200620320 A TW200620320 A TW 200620320A
- Authority
- TW
- Taiwan
- Prior art keywords
- hub
- methods
- periodic clock
- same
- memory module
- Prior art date
Links
- 230000000737 periodic effect Effects 0.000 title abstract 6
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
- G06F13/16—Handling requests for interconnection or transfer for access to memory bus
- G06F13/1668—Details of memory controller
- G06F13/1689—Synchronisation and timing concerns
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/12015—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising clock generation or timing circuitry
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/14—Implementation of control logic, e.g. test mode decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/06—Address interface arrangements, e.g. address buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Memory System (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040068811A KR100551475B1 (ko) | 2004-08-31 | 2004-08-31 | 비주기 클록옵션을 가지는 메모리 모듈과 모듈용 메모리칩 및 허브 칩 |
US11/029,008 US7606110B2 (en) | 2004-08-31 | 2005-01-05 | Memory module, memory unit, and hub with non-periodic clock and methods of using the same |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200620320A true TW200620320A (en) | 2006-06-16 |
Family
ID=36139561
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094115446A TW200620320A (en) | 2004-08-31 | 2005-05-12 | Memory module, memory unit, and hub with non-periodic clock and methods of using the same |
Country Status (4)
Country | Link |
---|---|
US (1) | US7606110B2 (zh) |
KR (1) | KR100551475B1 (zh) |
CN (1) | CN1744228A (zh) |
TW (1) | TW200620320A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI768703B (zh) * | 2020-09-07 | 2022-06-21 | 日商鎧俠股份有限公司 | 半導體積體電路及其試驗方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100588593B1 (ko) * | 2005-06-09 | 2006-06-14 | 삼성전자주식회사 | 레지스터형 메모리 모듈 및 그 제어방법 |
KR100705335B1 (ko) | 2005-10-31 | 2007-04-09 | 삼성전자주식회사 | 메모리 장치, 메모리 시스템 및 메모리 장치의 데이터입출력 방법 |
DE102006025133A1 (de) * | 2006-05-30 | 2007-12-06 | Infineon Technologies Ag | Speicher- und Speicherkommunikationssystem |
KR100871706B1 (ko) * | 2007-03-13 | 2008-12-08 | 삼성전자주식회사 | 클럭 미러링 스킴을 구현하는 메모리 장치 및 이를장착하는 메모리 시스템 |
KR100863016B1 (ko) | 2007-05-31 | 2008-10-13 | 주식회사 하이닉스반도체 | 동작 모드 설정 장치, 이를 포함하는 반도체 집적 회로 및반도체 집적 회로의 제어 방법 |
US8467486B2 (en) * | 2007-12-14 | 2013-06-18 | Mosaid Technologies Incorporated | Memory controller with flexible data alignment to clock |
US8781053B2 (en) * | 2007-12-14 | 2014-07-15 | Conversant Intellectual Property Management Incorporated | Clock reproducing and timing method in a system having a plurality of devices |
US8094504B2 (en) * | 2008-01-04 | 2012-01-10 | Integrated Device Technology Inc. | Buffered DRAM |
KR101203036B1 (ko) | 2011-01-26 | 2012-11-20 | 윈본드 일렉트로닉스 코포레이션 | 메모리장치 및 그의 접근방법 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1246361B (it) * | 1990-07-13 | 1994-11-17 | Lonati Srl | Macchina circolare per maglieria, calzetteria o simile, in particolareper l'esecuzione di lavorazioni con punti spugna. |
US5359232A (en) * | 1992-05-08 | 1994-10-25 | Cyrix Corporation | Clock multiplication circuit and method |
US5311486A (en) * | 1992-09-11 | 1994-05-10 | Ltx Corporation | Timing generation in an automatic electrical test system |
US5485602A (en) * | 1993-12-27 | 1996-01-16 | Motorola, Inc. | Integrated circuit having a control signal for identifying coinciding active edges of two clock signals |
US5689690A (en) * | 1995-09-25 | 1997-11-18 | Credence Systems Corporation | Timing signal generator |
US5786732A (en) * | 1995-10-24 | 1998-07-28 | Vlsi Technology, Inc. | Phase locked loop circuitry including a multiple frequency output voltage controlled oscillator circuit |
JPH1011966A (ja) * | 1996-06-27 | 1998-01-16 | Mitsubishi Electric Corp | 同期型半導体記憶装置および同期型メモリモジュール |
US5796995A (en) * | 1997-02-28 | 1998-08-18 | Texas Instruments Incorporated | Circuit and method for translating signals between clock domains in a microprocessor |
JP2002082830A (ja) * | 2000-02-14 | 2002-03-22 | Mitsubishi Electric Corp | インターフェイス回路 |
GB2370667B (en) * | 2000-09-05 | 2003-02-12 | Samsung Electronics Co Ltd | Semiconductor memory device having altered clock frequency for address and/or command signals, and memory module and system having the same |
US7000138B1 (en) * | 2001-06-07 | 2006-02-14 | Cirrus Logic, Inc | Circuits and methods for power management in a processor-based system and systems using the same |
DE10138883B4 (de) * | 2001-08-08 | 2006-03-30 | Infineon Technologies Ag | Verfahren sowie Vorrichtung zur synchronen Signalübertragung zwischen Logik-/Speicherbausteinen |
EP1302775A1 (en) * | 2001-10-16 | 2003-04-16 | Italtel s.p.a. | A clock generation system for a prototyping apparatus |
DE10249886B4 (de) * | 2002-10-25 | 2005-02-10 | Sp3D Chip Design Gmbh | Verfahren und Vorrichtung zum Erzeugen eines Taktsignals mit vorbestimmten Taktsingaleigenschaften |
US7177888B2 (en) * | 2003-08-01 | 2007-02-13 | Intel Corporation | Programmable random bit source |
US6958925B1 (en) * | 2003-12-24 | 2005-10-25 | Cypress Semiconductor Corporation | Staggered compare architecture for content addressable memory (CAM) device |
-
2004
- 2004-08-31 KR KR1020040068811A patent/KR100551475B1/ko not_active IP Right Cessation
-
2005
- 2005-01-05 US US11/029,008 patent/US7606110B2/en not_active Expired - Fee Related
- 2005-05-12 TW TW094115446A patent/TW200620320A/zh unknown
- 2005-07-08 CN CN200510081930.5A patent/CN1744228A/zh active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI768703B (zh) * | 2020-09-07 | 2022-06-21 | 日商鎧俠股份有限公司 | 半導體積體電路及其試驗方法 |
Also Published As
Publication number | Publication date |
---|---|
US20060044927A1 (en) | 2006-03-02 |
CN1744228A (zh) | 2006-03-08 |
KR100551475B1 (ko) | 2006-02-14 |
US7606110B2 (en) | 2009-10-20 |
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