TW200617928A - Semiconductor laser unit and optical pickup device equipped with the same - Google Patents
Semiconductor laser unit and optical pickup device equipped with the sameInfo
- Publication number
- TW200617928A TW200617928A TW094133703A TW94133703A TW200617928A TW 200617928 A TW200617928 A TW 200617928A TW 094133703 A TW094133703 A TW 094133703A TW 94133703 A TW94133703 A TW 94133703A TW 200617928 A TW200617928 A TW 200617928A
- Authority
- TW
- Taiwan
- Prior art keywords
- recess
- semiconductor laser
- laser unit
- same
- opening
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
- G11B7/127—Lasers; Multiple laser arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02253—Out-coupling of light using lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optical Head (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004298498A JP2006114096A (ja) | 2004-10-13 | 2004-10-13 | 半導体レーザユニットおよびそれを備えた光ピックアップ装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200617928A true TW200617928A (en) | 2006-06-01 |
Family
ID=36145272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094133703A TW200617928A (en) | 2004-10-13 | 2005-09-28 | Semiconductor laser unit and optical pickup device equipped with the same |
Country Status (6)
Country | Link |
---|---|
US (1) | US20060078021A1 (zh) |
JP (1) | JP2006114096A (zh) |
KR (1) | KR20060052168A (zh) |
CN (1) | CN1779811A (zh) |
SG (1) | SG121989A1 (zh) |
TW (1) | TW200617928A (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4523574B2 (ja) | 2006-08-25 | 2010-08-11 | パナソニック株式会社 | 光ピックアップ装置 |
EP2218419A1 (en) * | 2007-12-04 | 2010-08-18 | Panasonic Corporation | Laser unit |
JP2011077458A (ja) * | 2009-10-01 | 2011-04-14 | Panasonic Corp | レーザー装置 |
JP2012038894A (ja) * | 2010-08-06 | 2012-02-23 | Sumitomo Electric Ind Ltd | 発熱源実装用基板モジュール、照明装置 |
JP2013011841A (ja) * | 2011-09-28 | 2013-01-17 | Panasonic Corp | 画像表示装置 |
CN103904552A (zh) * | 2012-12-26 | 2014-07-02 | 鸿富锦精密工业(深圳)有限公司 | 投影用激光芯片封装结构 |
JP6749807B2 (ja) * | 2016-07-26 | 2020-09-02 | 新光電気工業株式会社 | 光半導体装置 |
JP2019096637A (ja) * | 2017-11-17 | 2019-06-20 | 株式会社小糸製作所 | レーザー光源ユニット |
JP7293697B2 (ja) * | 2019-02-06 | 2023-06-20 | 富士フイルムビジネスイノベーション株式会社 | 発光装置、光学装置および情報処理装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2737345C2 (de) * | 1976-08-20 | 1991-07-25 | Canon K.K., Tokio/Tokyo | Halbleiterlaser-Vorrichtung mit einem Peltier-Element |
JPH05307759A (ja) * | 1992-04-28 | 1993-11-19 | Olympus Optical Co Ltd | 光ピックアップ |
US5748658A (en) * | 1993-10-22 | 1998-05-05 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device and optical pickup head |
JPH07311970A (ja) * | 1994-05-17 | 1995-11-28 | Seiko Epson Corp | 光ヘッド及び光記憶装置 |
US5812582A (en) * | 1995-10-03 | 1998-09-22 | Methode Electronics, Inc. | Vertical cavity surface emitting laser feedback system and method |
US7061949B1 (en) * | 2002-08-16 | 2006-06-13 | Jds Uniphase Corporation | Methods, apparatus, and systems with semiconductor laser packaging for high modulation bandwidth |
US7508001B2 (en) * | 2004-06-21 | 2009-03-24 | Panasonic Corporation | Semiconductor laser device and manufacturing method thereof |
US7279751B2 (en) * | 2004-06-21 | 2007-10-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device and manufacturing method thereof |
-
2004
- 2004-10-13 JP JP2004298498A patent/JP2006114096A/ja active Pending
-
2005
- 2005-09-28 TW TW094133703A patent/TW200617928A/zh unknown
- 2005-10-11 SG SG200506654A patent/SG121989A1/en unknown
- 2005-10-11 KR KR1020050095379A patent/KR20060052168A/ko not_active Application Discontinuation
- 2005-10-12 US US11/247,283 patent/US20060078021A1/en not_active Abandoned
- 2005-10-13 CN CNA2005101135948A patent/CN1779811A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
CN1779811A (zh) | 2006-05-31 |
SG121989A1 (en) | 2006-05-26 |
KR20060052168A (ko) | 2006-05-19 |
JP2006114096A (ja) | 2006-04-27 |
US20060078021A1 (en) | 2006-04-13 |
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