TW200611368A - Electrically floating diagnostic plasma probe with ion property sensors - Google Patents
Electrically floating diagnostic plasma probe with ion property sensorsInfo
- Publication number
- TW200611368A TW200611368A TW094129475A TW94129475A TW200611368A TW 200611368 A TW200611368 A TW 200611368A TW 094129475 A TW094129475 A TW 094129475A TW 94129475 A TW94129475 A TW 94129475A TW 200611368 A TW200611368 A TW 200611368A
- Authority
- TW
- Taiwan
- Prior art keywords
- ion
- sensors
- electrically floating
- probe
- properties
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
- H05H1/0081—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature by electric means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/933,167 US20060043063A1 (en) | 2004-09-02 | 2004-09-02 | Electrically floating diagnostic plasma probe with ion property sensors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200611368A true TW200611368A (en) | 2006-04-01 |
Family
ID=35941574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094129475A TW200611368A (en) | 2004-09-02 | 2005-08-29 | Electrically floating diagnostic plasma probe with ion property sensors |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20060043063A1 (zh) |
| TW (1) | TW200611368A (zh) |
| WO (1) | WO2006028779A2 (zh) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7960670B2 (en) | 2005-05-03 | 2011-06-14 | Kla-Tencor Corporation | Methods of and apparatuses for measuring electrical parameters of a plasma process |
| KR100782370B1 (ko) | 2006-08-04 | 2007-12-07 | 삼성전자주식회사 | 지연 전기장을 이용한 이온 에너지 분포 분석기에 근거한이온 분석 시스템 |
| JP2010519768A (ja) | 2007-02-23 | 2010-06-03 | ケーエルエー−テンカー・コーポレーション | プロセス条件測定デバイス |
| US7875859B2 (en) * | 2008-03-31 | 2011-01-25 | Tokyo Electron Limited | Ion energy analyzer and methods of manufacturing and operating |
| US7777179B2 (en) | 2008-03-31 | 2010-08-17 | Tokyo Electron Limited | Two-grid ion energy analyzer and methods of manufacturing and operating |
| US8712571B2 (en) * | 2009-08-07 | 2014-04-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for wireless transmission of diagnostic information |
| US20110074341A1 (en) * | 2009-09-25 | 2011-03-31 | Kla- Tencor Corporation | Non-contact interface system |
| US8889021B2 (en) | 2010-01-21 | 2014-11-18 | Kla-Tencor Corporation | Process condition sensing device and method for plasma chamber |
| US8847159B2 (en) | 2011-03-28 | 2014-09-30 | Tokyo Electron Limited | Ion energy analyzer |
| JP6383647B2 (ja) * | 2014-11-19 | 2018-08-29 | 東京エレクトロン株式会社 | 測定システムおよび測定方法 |
| KR102417178B1 (ko) * | 2015-09-03 | 2022-07-05 | 삼성전자주식회사 | 마이크로파 탐침, 그 탐침을 구비한 플라즈마 모니터링 시스템, 및 그 시스템을 이용한 반도체 소자 제조방법 |
| US10553411B2 (en) | 2015-09-10 | 2020-02-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Ion collector for use in plasma systems |
| JP6630142B2 (ja) * | 2015-12-18 | 2020-01-15 | 株式会社ディスコ | 静電気検出装置 |
| US10026592B2 (en) | 2016-07-01 | 2018-07-17 | Lam Research Corporation | Systems and methods for tailoring ion energy distribution function by odd harmonic mixing |
| KR20240022912A (ko) | 2022-08-12 | 2024-02-20 | 삼성전자주식회사 | 반도체 설비 모니터링 장치, 및 그 모니터링 장치를 구비한 반도체 설비 |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4006404A (en) * | 1976-01-30 | 1977-02-01 | The United States Of America As Represented By The Secretary Of The Navy | Pulsed plasma probe |
| US5167748A (en) * | 1990-09-06 | 1992-12-01 | Charles Evans And Associates | Plasma etching method and apparatus |
| US5339039A (en) * | 1992-09-29 | 1994-08-16 | Arizona Board Of Regents On Behalf Of The University Of Arizona | Langmuir probe system for radio frequency excited plasma processing system |
| JPH07169590A (ja) * | 1993-09-16 | 1995-07-04 | Fujitsu Ltd | 電子密度の測定方法及びその装置及び電子密度の制御装置及びプラズマ処理装置 |
| US5444637A (en) * | 1993-09-28 | 1995-08-22 | Advanced Micro Devices, Inc. | Programmable semiconductor wafer for sensing, recording and retrieving fabrication process conditions to which the wafer is exposed |
| US5451784A (en) * | 1994-10-31 | 1995-09-19 | Applied Materials, Inc. | Composite diagnostic wafer for semiconductor wafer processing systems |
| DE4445762A1 (de) * | 1994-12-21 | 1996-06-27 | Adolf Slaby Inst Forschungsges | Verfahren und Vorrichtung zum Bestimmen absoluter Plasmaparameter |
| US5594328A (en) * | 1995-02-14 | 1997-01-14 | Lukaszek; Wieslaw A. | Passive probe employing cluster of charge monitors for determining simultaneous charging characteristics of wafer environment inside IC process equipment |
| US5565681A (en) * | 1995-03-23 | 1996-10-15 | Applied Materials, Inc. | Ion energy analyzer with an electrically controlled geometric filter |
| FR2738984B1 (fr) * | 1995-09-19 | 1997-11-21 | Centre Nat Rech Scient | Procede et dispositif de mesure d'un flux d'ions dans un plasma |
| US5801386A (en) * | 1995-12-11 | 1998-09-01 | Applied Materials, Inc. | Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using same |
| US5907820A (en) * | 1996-03-22 | 1999-05-25 | Applied Materials, Inc. | System for acquiring and analyzing a two-dimensional array of data |
| US5885402A (en) * | 1996-07-17 | 1999-03-23 | Applied Materials | Diagnostic head assembly for plasma chamber |
| GB9620151D0 (en) * | 1996-09-27 | 1996-11-13 | Surface Tech Sys Ltd | Plasma processing apparatus |
| EP0841692A3 (en) * | 1996-11-08 | 1998-12-23 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for optical evaluation of a semiconductor device |
| DE69627672D1 (de) * | 1996-12-16 | 2003-05-28 | St Microelectronics Srl | Methode zur Feststellung der Auswirkungen von Plasmabehandlungen auf Halbleiterscheiben |
| US5959309A (en) * | 1997-04-07 | 1999-09-28 | Industrial Technology Research Institute | Sensor to monitor plasma induced charging damage |
| US5967661A (en) * | 1997-06-02 | 1999-10-19 | Sensarray Corporation | Temperature calibration substrate |
| US5969639A (en) * | 1997-07-28 | 1999-10-19 | Lockheed Martin Energy Research Corporation | Temperature measuring device |
| US5970313A (en) * | 1997-12-19 | 1999-10-19 | Advanced Micro Devices, Inc. | Monitoring wafer temperature during thermal processing of wafers by measuring sheet resistance of a test wafer |
| US6244121B1 (en) * | 1998-03-06 | 2001-06-12 | Applied Materials, Inc. | Sensor device for non-intrusive diagnosis of a semiconductor processing system |
| US6419801B1 (en) * | 1998-04-23 | 2002-07-16 | Sandia Corporation | Method and apparatus for monitoring plasma processing operations |
| US6325536B1 (en) * | 1998-07-10 | 2001-12-04 | Sensarray Corporation | Integrated wafer temperature sensors |
| JP3497092B2 (ja) * | 1998-07-23 | 2004-02-16 | 名古屋大学長 | プラズマ密度情報測定方法、および測定に用いられるプローブ、並びにプラズマ密度情報測定装置 |
| US6326794B1 (en) * | 1999-01-14 | 2001-12-04 | International Business Machines Corporation | Method and apparatus for in-situ monitoring of ion energy distribution for endpoint detection via capacitance measurement |
| CA2280378C (en) * | 1999-04-29 | 2009-05-26 | S&C Electric Company | Arrangements to detect and respond to disturbances in electrical power systems |
| US6190040B1 (en) * | 1999-05-10 | 2001-02-20 | Sensarray Corporation | Apparatus for sensing temperature on a substrate in an integrated circuit fabrication tool |
| US6450184B1 (en) * | 2000-02-04 | 2002-09-17 | Lawrence Azar | Apparatus for measuring cavitation energy profiles |
| US6653852B1 (en) * | 2000-03-31 | 2003-11-25 | Lam Research Corporation | Wafer integrated plasma probe assembly array |
| US6691068B1 (en) * | 2000-08-22 | 2004-02-10 | Onwafer Technologies, Inc. | Methods and apparatus for obtaining data for process operation, optimization, monitoring, and control |
| JP3665265B2 (ja) * | 2000-12-28 | 2005-06-29 | 株式会社日立製作所 | プラズマ処理装置 |
| TW594455B (en) * | 2001-04-19 | 2004-06-21 | Onwafer Technologies Inc | Methods and apparatus for obtaining data for process operation, optimization, monitoring, and control |
| US6673636B2 (en) * | 2001-05-18 | 2004-01-06 | Applied Materails Inc. | Method of real-time plasma charging voltage measurement on powered electrode with electrostatic chuck in plasma process chambers |
| US6576922B1 (en) * | 2001-12-21 | 2003-06-10 | Texas Instruments Incorporated | Ferroelectric capacitor plasma charging monitor |
| JP4175456B2 (ja) * | 2002-03-26 | 2008-11-05 | 株式会社 東北テクノアーチ | オンウエハ・モニタリング・システム |
| US6614051B1 (en) * | 2002-05-10 | 2003-09-02 | Applied Materials, Inc. | Device for monitoring substrate charging and method of fabricating same |
-
2004
- 2004-09-02 US US10/933,167 patent/US20060043063A1/en not_active Abandoned
-
2005
- 2005-08-29 WO PCT/US2005/030691 patent/WO2006028779A2/en not_active Ceased
- 2005-08-29 TW TW094129475A patent/TW200611368A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2006028779A3 (en) | 2009-04-16 |
| WO2006028779A2 (en) | 2006-03-16 |
| US20060043063A1 (en) | 2006-03-02 |
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