TW200610000A - Semiconductor assembly for limiting voltage - Google Patents

Semiconductor assembly for limiting voltage

Info

Publication number
TW200610000A
TW200610000A TW094117216A TW94117216A TW200610000A TW 200610000 A TW200610000 A TW 200610000A TW 094117216 A TW094117216 A TW 094117216A TW 94117216 A TW94117216 A TW 94117216A TW 200610000 A TW200610000 A TW 200610000A
Authority
TW
Taiwan
Prior art keywords
doped semiconductor
semiconductor layer
limiting voltage
semiconductor assembly
cover electrode
Prior art date
Application number
TW094117216A
Other languages
English (en)
Inventor
Alfred Goerlach
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of TW200610000A publication Critical patent/TW200610000A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814—Diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/0788—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
TW094117216A 2004-09-13 2005-05-26 Semiconductor assembly for limiting voltage TW200610000A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102004044141A DE102004044141A1 (de) 2004-09-13 2004-09-13 Halbleiteranordnung zur Spannungsbegrenzung

Publications (1)

Publication Number Publication Date
TW200610000A true TW200610000A (en) 2006-03-16

Family

ID=34993057

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094117216A TW200610000A (en) 2004-09-13 2005-05-26 Semiconductor assembly for limiting voltage

Country Status (8)

Country Link
US (1) US7671379B2 (zh)
EP (1) EP1792347B1 (zh)
JP (1) JP2008512861A (zh)
KR (1) KR20070064426A (zh)
CN (1) CN101019238B (zh)
DE (1) DE102004044141A1 (zh)
TW (1) TW200610000A (zh)
WO (1) WO2006029921A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7687891B2 (en) * 2007-05-14 2010-03-30 Infineon Technologies Ag Diode having one or more zones of a first conductivity type and one or more zones of a second conductivity type each located within a layer of the second conductivity type
US8901647B2 (en) * 2011-12-08 2014-12-02 Infineon Technologies Ag Semiconductor device including first and second semiconductor elements
DE102013211374A1 (de) * 2013-06-18 2014-12-18 Robert Bosch Gmbh Transistor und Verfahren zur Herstellung eines Transistors
CN104659081A (zh) * 2015-03-09 2015-05-27 江苏中科君芯科技有限公司 改善恢复耐量的二极管结构
US11127737B2 (en) * 2019-02-12 2021-09-21 Macom Technology Solutions Holdings, Inc. Monolithic multi-I region diode limiters

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5328373Y2 (zh) * 1974-09-03 1978-07-17
DE2506102C3 (de) 1975-02-13 1982-03-25 Siemens AG, 1000 Berlin und 8000 München Halbleitergleichrichter
GB2050694B (en) 1979-05-07 1983-09-28 Nippon Telegraph & Telephone Electrode structure for a semiconductor device
DE3631136A1 (de) * 1986-09-12 1988-03-24 Siemens Ag Diode mit weichem abrissverhalten
DE3939324A1 (de) * 1989-11-28 1991-05-29 Eupec Gmbh & Co Kg Leistungs-halbleiterbauelement mit emitterkurzschluessen
JP3321185B2 (ja) 1990-09-28 2002-09-03 株式会社東芝 高耐圧半導体装置
US6180444B1 (en) * 1998-02-18 2001-01-30 International Business Machines Corporation Semiconductor device having ultra-sharp P-N junction and method of manufacturing the same
DE10046936A1 (de) 2000-09-21 2002-04-18 Infineon Technologies Ag Diodenvorrichtung aus zwei monolithisch miteinander integrierten Dioden

Also Published As

Publication number Publication date
JP2008512861A (ja) 2008-04-24
US7671379B2 (en) 2010-03-02
DE102004044141A1 (de) 2006-03-30
KR20070064426A (ko) 2007-06-20
EP1792347B1 (de) 2016-12-28
CN101019238B (zh) 2010-06-02
EP1792347A1 (de) 2007-06-06
US20080191306A1 (en) 2008-08-14
WO2006029921A1 (de) 2006-03-23
CN101019238A (zh) 2007-08-15

Similar Documents

Publication Publication Date Title
TW200733423A (en) Nitride semiconductor device
TW200620657A (en) Recessed semiconductor device
TW200610019A (en) Fully depleted SOI multiple threshold voltage application
WO2009057983A3 (en) Light emitting device package and method for fabricating the same
MY165986A (en) Photovoltaic devices including heterojunctions
TW200627563A (en) Bump-less chip package
WO2008057438A3 (en) Power switching semiconductor devices including rectifying junction-shunts
MY151538A (en) Light-emitting device with improved electrode structures
TW200627561A (en) Chip package
WO2003065418A3 (en) Planar avalanche photodiode
TW200636971A (en) Electro-static discharge protection circuit and method for fabricating the same
WO2007110729A3 (en) Seating arrangement
WO2002091483A3 (en) Improved photovoltaic device
EP1738217A4 (en) FLEXIBLE ELECTROSTATIC ACTUATOR
TW200623330A (en) Systems and methods for voltage distribution via multiple epitaxial layers
TW200610000A (en) Semiconductor assembly for limiting voltage
TW200725889A (en) Semiconductor device and method for forming the same
TW200625639A (en) Systems and methods for voltage distribution via epitaxial layers
TW200727468A (en) Semiconductor device comprising a superlattice dielectric interface layer
TW200727497A (en) Dielectric isolation type semiconductor device and manufacturing method therefor
TW200713576A (en) Semiconductor device
TW200503268A (en) High voltage metal-oxide semiconductor device
GB0315477D0 (en) Rectifying diodes
WO2006099102A3 (en) Power semiconductor package
TW200743179A (en) Semiconductor structure