TW200608564A - Method of manufacturing active matrix substrate, active matrix substrate, electro-optical device, and electronic apparatus - Google Patents

Method of manufacturing active matrix substrate, active matrix substrate, electro-optical device, and electronic apparatus

Info

Publication number
TW200608564A
TW200608564A TW094127958A TW94127958A TW200608564A TW 200608564 A TW200608564 A TW 200608564A TW 094127958 A TW094127958 A TW 094127958A TW 94127958 A TW94127958 A TW 94127958A TW 200608564 A TW200608564 A TW 200608564A
Authority
TW
Taiwan
Prior art keywords
active matrix
matrix substrate
wiring line
electro
optical device
Prior art date
Application number
TW094127958A
Other languages
English (en)
Other versions
TWI270979B (en
Inventor
Yoichi Noda
Atsushi Denda
Toshimitsu Hirai
Shinri Sakai
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of TW200608564A publication Critical patent/TW200608564A/zh
Application granted granted Critical
Publication of TWI270979B publication Critical patent/TWI270979B/zh

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
TW094127958A 2004-08-27 2005-08-16 Method of manufacturing active matrix substrate, active matrix substrate, electro-optical device, and electronic apparatus TWI270979B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004247920A JP2006065021A (ja) 2004-08-27 2004-08-27 アクティブマトリクス基板の製造方法、アクティブマトリクス基板、電気光学装置並びに電子機器

Publications (2)

Publication Number Publication Date
TW200608564A true TW200608564A (en) 2006-03-01
TWI270979B TWI270979B (en) 2007-01-11

Family

ID=35943813

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094127958A TWI270979B (en) 2004-08-27 2005-08-16 Method of manufacturing active matrix substrate, active matrix substrate, electro-optical device, and electronic apparatus

Country Status (5)

Country Link
US (1) US7517735B2 (zh)
JP (1) JP2006065021A (zh)
KR (1) KR100749111B1 (zh)
CN (1) CN1740886B (zh)
TW (1) TWI270979B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE602005025074D1 (de) * 2004-12-08 2011-01-13 Samsung Mobile Display Co Ltd Methode zur Herstellung einer Leiterstruktur eines Dünnfilmtransistors
KR100647695B1 (ko) * 2005-05-27 2006-11-23 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 그의 제조방법과 이를 구비한평판표시장치
JP4572814B2 (ja) * 2005-11-16 2010-11-04 セイコーエプソン株式会社 アクティブマトリクス基板とその製造方法、及び電気光学装置並びに電子機器
JP5167707B2 (ja) 2006-08-04 2013-03-21 株式会社リコー 積層構造体、多層配線基板、アクティブマトリックス基板、並びに電子表示装置
JP2008058455A (ja) * 2006-08-30 2008-03-13 Seiko Epson Corp アクティブマトリクス基板の製造方法及び液晶表示装置の製造方法
JP2010160670A (ja) * 2009-01-08 2010-07-22 Seiko Epson Corp タッチパネルの製造方法、タッチパネル、表示装置、及び電子機器
US9261730B2 (en) 2013-01-03 2016-02-16 Empire Technology Development Llc Display devices including inorganic components and methods of making and using the same
CN103441119B (zh) * 2013-07-05 2016-03-30 京东方科技集团股份有限公司 一种制造esd器件的方法、esd器件和显示面板

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02170135A (ja) 1988-12-23 1990-06-29 Nec Corp 薄膜電界効果型トランジスタ素子アレイ
CN103956361A (zh) 1995-10-03 2014-07-30 精工爱普生株式会社 有源矩阵基板的制造方法和薄膜元件的制造方法
KR100280875B1 (ko) * 1997-10-25 2001-02-01 구본준 칼라필터기판과 그 제조방법
CN1293784C (zh) 1998-03-17 2007-01-03 精工爱普生株式会社 薄膜构图衬底、薄膜形成方法和薄膜元件
US6885110B1 (en) 1999-09-08 2005-04-26 Matsushita Electric Industrial Co., Ltd. Electrical circuit board and TFT array substrate and liquid crystal display device utilizing the same
JP4387065B2 (ja) 2000-01-26 2009-12-16 株式会社半導体エネルギー研究所 液晶表示装置および液晶表示装置の作製方法
GB2371910A (en) * 2001-01-31 2002-08-07 Seiko Epson Corp Display devices
JP2002268084A (ja) * 2001-03-08 2002-09-18 Sharp Corp アクティブマトリクス基板及びその製造方法
JP4021194B2 (ja) 2001-12-28 2007-12-12 シャープ株式会社 薄膜トランジスタ装置の製造方法
JP2003222854A (ja) 2002-01-31 2003-08-08 Casio Comput Co Ltd 液晶表示装置およびその製造方法
JP3700697B2 (ja) * 2002-02-12 2005-09-28 セイコーエプソン株式会社 電気光学装置及び電子機器
JP3965562B2 (ja) 2002-04-22 2007-08-29 セイコーエプソン株式会社 デバイスの製造方法、デバイス、電気光学装置及び電子機器
JP4047626B2 (ja) * 2002-05-16 2008-02-13 株式会社 日立ディスプレイズ 画像表示装置
WO2004008423A1 (en) 2002-07-12 2004-01-22 Sharp Kabushiki Kaisha Wiring structure, display apparatus, and active device substrate
US7167217B2 (en) 2002-08-23 2007-01-23 Lg.Philips Lcd Co., Ltd. Liquid crystal display device and method for manufacturing the same
KR100488156B1 (ko) 2002-12-31 2005-05-06 엘지.필립스 엘시디 주식회사 액정표시소자
US7166499B2 (en) * 2003-12-17 2007-01-23 Au Optronics Corporation Method of fabricating a thin film transistor for an array panel

Also Published As

Publication number Publication date
TWI270979B (en) 2007-01-11
CN1740886A (zh) 2006-03-01
KR100749111B1 (ko) 2007-08-13
US7517735B2 (en) 2009-04-14
JP2006065021A (ja) 2006-03-09
KR20060050191A (ko) 2006-05-19
CN1740886B (zh) 2010-05-05
US20060046359A1 (en) 2006-03-02

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MM4A Annulment or lapse of patent due to non-payment of fees