TW200607108A - Thin film photoelectric conversion device - Google Patents

Thin film photoelectric conversion device

Info

Publication number
TW200607108A
TW200607108A TW094108215A TW94108215A TW200607108A TW 200607108 A TW200607108 A TW 200607108A TW 094108215 A TW094108215 A TW 094108215A TW 94108215 A TW94108215 A TW 94108215A TW 200607108 A TW200607108 A TW 200607108A
Authority
TW
Taiwan
Prior art keywords
thin film
photoelectric conversion
film photoelectric
conversion device
junction type
Prior art date
Application number
TW094108215A
Other languages
English (en)
Chinese (zh)
Inventor
Takashi Suezaki
Susumu Fukuda
Kenji Yamamoto
Original Assignee
Kaneka Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kaneka Corp filed Critical Kaneka Corp
Publication of TW200607108A publication Critical patent/TW200607108A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
TW094108215A 2004-03-17 2005-03-17 Thin film photoelectric conversion device TW200607108A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004075888 2004-03-17

Publications (1)

Publication Number Publication Date
TW200607108A true TW200607108A (en) 2006-02-16

Family

ID=34975871

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094108215A TW200607108A (en) 2004-03-17 2005-03-17 Thin film photoelectric conversion device

Country Status (3)

Country Link
JP (1) JPWO2005088734A1 (ja)
TW (1) TW200607108A (ja)
WO (1) WO2005088734A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100886383B1 (ko) * 2007-04-05 2009-03-02 (주)실리콘화일 적층구조를 갖는 결정질 태양전지 및 그 제조 방법
US20090139558A1 (en) * 2007-11-29 2009-06-04 Shunpei Yamazaki Photoelectric conversion device and manufacturing method thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61196583A (ja) * 1985-02-25 1986-08-30 Sharp Corp 光起電力装置
JPS63503103A (ja) * 1985-09-30 1988-11-10 鐘淵化学工業株式会社 マルチジャンクション型半導体デバイス
JPH0282582A (ja) * 1988-09-19 1990-03-23 Tonen Corp 積層型アモルファスシリコン太陽電池
JPH11186583A (ja) * 1997-12-24 1999-07-09 Kanegafuchi Chem Ind Co Ltd 集積化されたタンデム型薄膜光電変換装置とその製造方法
JP4105811B2 (ja) * 1998-09-30 2008-06-25 京セラ株式会社 多結晶シリコン膜の形成方法
JP2000183377A (ja) * 1998-12-17 2000-06-30 Kanegafuchi Chem Ind Co Ltd シリコン系薄膜光電変換装置の製造方法
JP2003298089A (ja) * 2002-04-02 2003-10-17 Kanegafuchi Chem Ind Co Ltd タンデム型薄膜光電変換装置とその製造方法
JP4222500B2 (ja) * 2002-04-02 2009-02-12 株式会社カネカ シリコン系薄膜光電変換装置

Also Published As

Publication number Publication date
JPWO2005088734A1 (ja) 2008-01-31
WO2005088734A1 (ja) 2005-09-22

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