TW200606602A - Method for reducing the fogging effect - Google Patents
Method for reducing the fogging effectInfo
- Publication number
- TW200606602A TW200606602A TW094121193A TW94121193A TW200606602A TW 200606602 A TW200606602 A TW 200606602A TW 094121193 A TW094121193 A TW 094121193A TW 94121193 A TW94121193 A TW 94121193A TW 200606602 A TW200606602 A TW 200606602A
- Authority
- TW
- Taiwan
- Prior art keywords
- proximity
- control function
- fogging effect
- effect
- fogging
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31769—Proximity effect correction
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04103019A EP1612833A1 (en) | 2004-06-29 | 2004-06-29 | Method for reducing the fogging effect |
EP04103497A EP1612835A1 (en) | 2004-06-29 | 2004-07-22 | Method for Reducing the Fogging Effect |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200606602A true TW200606602A (en) | 2006-02-16 |
TWI291083B TWI291083B (en) | 2007-12-11 |
Family
ID=35463939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094121193A TWI291083B (en) | 2004-06-29 | 2005-06-24 | Method for reducing the fogging effect in an electron beam lithography system |
Country Status (4)
Country | Link |
---|---|
US (1) | US7435517B2 (zh) |
EP (1) | EP1612835A1 (zh) |
JP (1) | JP4871535B2 (zh) |
TW (1) | TWI291083B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9343267B2 (en) | 2012-04-18 | 2016-05-17 | D2S, Inc. | Method and system for dimensional uniformity using charged particle beam lithography |
TWI569088B (zh) * | 2011-06-25 | 2017-02-01 | D2S公司 | 用帶電粒子射束微影術形成圖案之方法及系統 |
US9612530B2 (en) | 2011-02-28 | 2017-04-04 | D2S, Inc. | Method and system for design of enhanced edge slope patterns for charged particle beam lithography |
US9625809B2 (en) | 2008-09-01 | 2017-04-18 | D2S, Inc. | Method and system for forming patterns using charged particle beam lithography with variable pattern dosage |
US9715169B2 (en) | 2008-09-01 | 2017-07-25 | D2S, Inc. | Method and system for forming a pattern on a reticle using charged particle beam lithography |
US10031413B2 (en) | 2011-09-19 | 2018-07-24 | D2S, Inc. | Method and system for forming patterns using charged particle beam lithography |
Families Citing this family (16)
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---|---|---|---|---|
US7476879B2 (en) * | 2005-09-30 | 2009-01-13 | Applied Materials, Inc. | Placement effects correction in raster pattern generator |
US7498591B2 (en) * | 2005-09-30 | 2009-03-03 | Applied Materials, Inc. | Critical dimension effects correction in raster pattern generator |
KR100706813B1 (ko) * | 2006-02-13 | 2007-04-12 | 삼성전자주식회사 | 반도체 장치의 패턴 배치 방법 |
JP4773224B2 (ja) * | 2006-02-14 | 2011-09-14 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置、荷電粒子ビーム描画方法及びプログラム |
US7805699B2 (en) * | 2007-10-11 | 2010-09-28 | Mentor Graphics Corporation | Shape-based photolithographic model calibration |
JP5480496B2 (ja) * | 2008-03-25 | 2014-04-23 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置 |
US8473875B2 (en) | 2010-10-13 | 2013-06-25 | D2S, Inc. | Method and system for forming high accuracy patterns using charged particle beam lithography |
US9323140B2 (en) | 2008-09-01 | 2016-04-26 | D2S, Inc. | Method and system for forming a pattern on a reticle using charged particle beam lithography |
JP2010250286A (ja) * | 2009-03-23 | 2010-11-04 | Toshiba Corp | フォトマスク、半導体装置、荷電ビーム描画装置 |
KR101854828B1 (ko) | 2009-05-20 | 2018-05-04 | 마퍼 리쏘그라피 아이피 비.브이. | 듀얼 패스 스캐닝 |
US9034542B2 (en) | 2011-06-25 | 2015-05-19 | D2S, Inc. | Method and system for forming patterns with charged particle beam lithography |
JP6189933B2 (ja) | 2012-04-18 | 2017-08-30 | ディー・ツー・エス・インコーポレイテッドD2S, Inc. | 荷電粒子ビームリソグラフィを用いる限界寸法均一性のための方法およびシステム |
US8959463B2 (en) * | 2012-11-08 | 2015-02-17 | D2S, Inc. | Method and system for dimensional uniformity using charged particle beam lithography |
FR3005170B1 (fr) * | 2013-04-29 | 2017-02-17 | Aselta Nanographics | Procede de lithographie a optimisation combinee de l'energie rayonnee et de la geometrie applicable sur des formes complexes |
US9372394B2 (en) * | 2014-01-24 | 2016-06-21 | International Business Machines Corporation | Test pattern layout for test photomask and method for evaluating critical dimension changes |
CN111507058B (zh) * | 2020-04-23 | 2022-07-22 | 福州立芯科技有限公司 | 一种考虑电子束雾化效应的解析布局方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61156813A (ja) * | 1984-12-28 | 1986-07-16 | Toshiba Corp | 電子線描画に用いるパタ−ン |
JPS61198630A (ja) * | 1985-02-27 | 1986-09-03 | Toshiba Corp | レジストパタ−ン形成方法 |
JPS6358829A (ja) * | 1986-08-29 | 1988-03-14 | Toshiba Corp | 電子線ビ−ムによるパタ−ン形成方法 |
JPS6386518A (ja) * | 1986-09-30 | 1988-04-16 | Toshiba Corp | パタ−ン形成方法 |
JP3466900B2 (ja) * | 1998-01-19 | 2003-11-17 | 株式会社東芝 | 電子ビーム描画装置及び電子ビーム描画方法 |
JPH11260694A (ja) * | 1998-03-12 | 1999-09-24 | Oki Electric Ind Co Ltd | 近接効果パラメータの測定方法 |
JPH11274043A (ja) * | 1998-03-24 | 1999-10-08 | Oki Electric Ind Co Ltd | レジストパタンの形成方法 |
JP2001244165A (ja) * | 2000-02-25 | 2001-09-07 | Nikon Corp | 近接効果補正方法、レチクル及びデバイス製造方法 |
JP3686367B2 (ja) * | 2001-11-15 | 2005-08-24 | 株式会社ルネサステクノロジ | パターン形成方法および半導体装置の製造方法 |
JP2004140311A (ja) * | 2002-08-20 | 2004-05-13 | Sony Corp | 露光方法および露光装置 |
JP2005019780A (ja) * | 2003-06-27 | 2005-01-20 | Nikon Corp | 荷電粒子線露光転写におけるパターン形状の推定方法、荷電粒子線露光転写に使用するレチクルパターンの決定方法、及び近接効果のパラメータの推定方法 |
-
2004
- 2004-07-22 EP EP04103497A patent/EP1612835A1/en not_active Withdrawn
-
2005
- 2005-06-23 US US11/165,500 patent/US7435517B2/en not_active Expired - Fee Related
- 2005-06-24 TW TW094121193A patent/TWI291083B/zh not_active IP Right Cessation
- 2005-06-28 JP JP2005188342A patent/JP4871535B2/ja not_active Expired - Fee Related
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9625809B2 (en) | 2008-09-01 | 2017-04-18 | D2S, Inc. | Method and system for forming patterns using charged particle beam lithography with variable pattern dosage |
US9715169B2 (en) | 2008-09-01 | 2017-07-25 | D2S, Inc. | Method and system for forming a pattern on a reticle using charged particle beam lithography |
US10101648B2 (en) | 2008-09-01 | 2018-10-16 | D2S, Inc. | Method and system for forming a pattern on a reticle using charged particle beam lithography |
US9612530B2 (en) | 2011-02-28 | 2017-04-04 | D2S, Inc. | Method and system for design of enhanced edge slope patterns for charged particle beam lithography |
TWI569088B (zh) * | 2011-06-25 | 2017-02-01 | D2S公司 | 用帶電粒子射束微影術形成圖案之方法及系統 |
US10031413B2 (en) | 2011-09-19 | 2018-07-24 | D2S, Inc. | Method and system for forming patterns using charged particle beam lithography |
US9343267B2 (en) | 2012-04-18 | 2016-05-17 | D2S, Inc. | Method and system for dimensional uniformity using charged particle beam lithography |
US9859100B2 (en) | 2012-04-18 | 2018-01-02 | D2S, Inc. | Method and system for dimensional uniformity using charged particle beam lithography |
US10431422B2 (en) | 2012-04-18 | 2019-10-01 | D2S, Inc. | Method and system for dimensional uniformity using charged particle beam lithography |
Also Published As
Publication number | Publication date |
---|---|
JP4871535B2 (ja) | 2012-02-08 |
TWI291083B (en) | 2007-12-11 |
JP2006019732A (ja) | 2006-01-19 |
US7435517B2 (en) | 2008-10-14 |
US20050287451A1 (en) | 2005-12-29 |
EP1612835A1 (en) | 2006-01-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |