TW200606286A - Silicon carbide single crystal and its etching method - Google Patents

Silicon carbide single crystal and its etching method

Info

Publication number
TW200606286A
TW200606286A TW094123223A TW94123223A TW200606286A TW 200606286 A TW200606286 A TW 200606286A TW 094123223 A TW094123223 A TW 094123223A TW 94123223 A TW94123223 A TW 94123223A TW 200606286 A TW200606286 A TW 200606286A
Authority
TW
Taiwan
Prior art keywords
single crystal
silicon carbide
carbide single
etching method
nitrogen trifluoride
Prior art date
Application number
TW094123223A
Other languages
English (en)
Inventor
Tetsuro Tojo
Akimasa Tasaka
Minoru Inaba
Atsuhisa Mimoto
Masamichi Tanaka
Kaori Shima
Original Assignee
Toyo Tanso Co
Mitsui Chemicals Inc
Sumitomo Osaka Cement Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Tanso Co, Mitsui Chemicals Inc, Sumitomo Osaka Cement Co Ltd filed Critical Toyo Tanso Co
Publication of TW200606286A publication Critical patent/TW200606286A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW094123223A 2004-07-08 2005-07-08 Silicon carbide single crystal and its etching method TW200606286A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004201617A JP2006024749A (ja) 2004-07-08 2004-07-08 炭化珪素単結晶及びそのエッチング方法

Publications (1)

Publication Number Publication Date
TW200606286A true TW200606286A (en) 2006-02-16

Family

ID=35783810

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094123223A TW200606286A (en) 2004-07-08 2005-07-08 Silicon carbide single crystal and its etching method

Country Status (8)

Country Link
US (1) US20080050301A1 (zh)
EP (1) EP1783825A4 (zh)
JP (1) JP2006024749A (zh)
KR (1) KR20070057091A (zh)
CN (1) CN100474523C (zh)
HK (1) HK1107610A1 (zh)
TW (1) TW200606286A (zh)
WO (1) WO2006006466A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007332019A (ja) * 2006-05-18 2007-12-27 Showa Denko Kk 炭化珪素単結晶の製造方法
CN101783296B (zh) * 2009-01-20 2011-09-14 中芯国际集成电路制造(上海)有限公司 栅极侧壁层的形成方法
JP2021082689A (ja) * 2019-11-18 2021-05-27 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2616030A1 (fr) * 1987-06-01 1988-12-02 Commissariat Energie Atomique Procede de gravure ou de depot par plasma et dispositif pour la mise en oeuvre du procede
US4981551A (en) * 1987-11-03 1991-01-01 North Carolina State University Dry etching of silicon carbide
JPH07161690A (ja) * 1993-12-09 1995-06-23 Toshiba Corp 炭化珪素体のエッチング方法
US6336971B1 (en) * 1997-09-12 2002-01-08 Showa Denko Kabushiki Kaisha Method and apparatus for producing silicon carbide single crystal
JP3248071B2 (ja) * 1998-10-08 2002-01-21 日本ピラー工業株式会社 単結晶ＳｉＣ

Also Published As

Publication number Publication date
HK1107610A1 (en) 2008-04-11
JP2006024749A (ja) 2006-01-26
CN100474523C (zh) 2009-04-01
EP1783825A1 (en) 2007-05-09
WO2006006466A1 (ja) 2006-01-19
KR20070057091A (ko) 2007-06-04
US20080050301A1 (en) 2008-02-28
CN1985362A (zh) 2007-06-20
EP1783825A4 (en) 2008-11-12

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