HK1107610A1 - Method for etching silicon carbide single crystal - Google Patents
Method for etching silicon carbide single crystalInfo
- Publication number
- HK1107610A1 HK1107610A1 HK07113042.4A HK07113042A HK1107610A1 HK 1107610 A1 HK1107610 A1 HK 1107610A1 HK 07113042 A HK07113042 A HK 07113042A HK 1107610 A1 HK1107610 A1 HK 1107610A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- single crystal
- silicon carbide
- carbide single
- etching silicon
- etching
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title 1
- 238000005530 etching Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004201617A JP2006024749A (ja) | 2004-07-08 | 2004-07-08 | 炭化珪素単結晶及びそのエッチング方法 |
PCT/JP2005/012473 WO2006006466A1 (ja) | 2004-07-08 | 2005-07-06 | 炭化珪素単結晶及びそのエッチング方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1107610A1 true HK1107610A1 (en) | 2008-04-11 |
Family
ID=35783810
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK07113042.4A HK1107610A1 (en) | 2004-07-08 | 2007-11-29 | Method for etching silicon carbide single crystal |
Country Status (8)
Country | Link |
---|---|
US (1) | US20080050301A1 (xx) |
EP (1) | EP1783825A4 (xx) |
JP (1) | JP2006024749A (xx) |
KR (1) | KR20070057091A (xx) |
CN (1) | CN100474523C (xx) |
HK (1) | HK1107610A1 (xx) |
TW (1) | TW200606286A (xx) |
WO (1) | WO2006006466A1 (xx) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007332019A (ja) * | 2006-05-18 | 2007-12-27 | Showa Denko Kk | 炭化珪素単結晶の製造方法 |
CN101783296B (zh) * | 2009-01-20 | 2011-09-14 | 中芯国际集成电路制造(上海)有限公司 | 栅极侧壁层的形成方法 |
JP2021082689A (ja) * | 2019-11-18 | 2021-05-27 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2616030A1 (fr) * | 1987-06-01 | 1988-12-02 | Commissariat Energie Atomique | Procede de gravure ou de depot par plasma et dispositif pour la mise en oeuvre du procede |
US4981551A (en) * | 1987-11-03 | 1991-01-01 | North Carolina State University | Dry etching of silicon carbide |
JPH07161690A (ja) * | 1993-12-09 | 1995-06-23 | Toshiba Corp | 炭化珪素体のエッチング方法 |
US6336971B1 (en) * | 1997-09-12 | 2002-01-08 | Showa Denko Kabushiki Kaisha | Method and apparatus for producing silicon carbide single crystal |
JP3248071B2 (ja) * | 1998-10-08 | 2002-01-21 | 日本ピラー工業株式会社 | 単結晶SiC |
-
2004
- 2004-07-08 JP JP2004201617A patent/JP2006024749A/ja active Pending
-
2005
- 2005-07-06 KR KR1020067027560A patent/KR20070057091A/ko not_active Application Discontinuation
- 2005-07-06 US US11/631,851 patent/US20080050301A1/en not_active Abandoned
- 2005-07-06 WO PCT/JP2005/012473 patent/WO2006006466A1/ja active Application Filing
- 2005-07-06 EP EP05758208A patent/EP1783825A4/en not_active Withdrawn
- 2005-07-06 CN CNB2005800230356A patent/CN100474523C/zh not_active Expired - Fee Related
- 2005-07-08 TW TW094123223A patent/TW200606286A/zh unknown
-
2007
- 2007-11-29 HK HK07113042.4A patent/HK1107610A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US20080050301A1 (en) | 2008-02-28 |
CN100474523C (zh) | 2009-04-01 |
JP2006024749A (ja) | 2006-01-26 |
EP1783825A4 (en) | 2008-11-12 |
EP1783825A1 (en) | 2007-05-09 |
WO2006006466A1 (ja) | 2006-01-19 |
TW200606286A (en) | 2006-02-16 |
CN1985362A (zh) | 2007-06-20 |
KR20070057091A (ko) | 2007-06-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1806437A4 (en) | METHOD FOR PRODUCING SILICON CARBIDE EINSTRISTALL | |
EP1785512A4 (en) | SILICON CARBIDE SINGLE CRYSTALLINE PLATE AND METHOD OF MANUFACTURING THE SAME | |
EP1739211A4 (en) | METHOD FOR THE SYNTHESIS OF SILICON CARBIDE MONOCRYSTAL (SiC) AND MONOCRYSTAL OF SILICON CARBIDE (SiC) OBTAINED BY SUCH METHOD | |
TWI370855B (en) | Method for producing silicon carbide single crystal | |
EP1929535B8 (en) | Method for producing a silicon carbide semiconductor device | |
EP1788620A4 (en) | PROCESS FOR PRODUCING SILICON PLATE | |
EP1895031A4 (en) | PROCESS FOR PRODUCING A MONOCRYSTAL OF SILICON CARBIDE | |
EP1724238A4 (en) | PROCESS FOR REMOVING THE BORON FROM THE SILICON | |
EP1772539A4 (en) | SILICON CARBIDE CRYSTAL AND CRYSTAL WAFER | |
TWI347985B (en) | Silicon single crystal wafer for igbt and method for manufacturing silicon single crystal wafer for igbt | |
EP1887110A4 (en) | METHOD FOR PRODUCING SILICONE INCRISTALS AND SILICON WAFER | |
TWI339861B (en) | Method for etching single wafer | |
EP1752567A4 (en) | METHOD FOR PRODUCING A WATER OF SILICON CARBIDE EINSTRISTALL | |
SG118403A1 (en) | Wafer dividing method | |
EP1895573A4 (en) | MONOCRYSTAL SILICON CARBIDE PLATEBOARD AND METHOD FOR PRODUCING SAME | |
EP1717848A4 (en) | PROCESS FOR PRODUCING SILICONE OXIDE FILM | |
EP1710836A4 (en) | METHOD FOR PRODUCING AN SOI WATER | |
EP1736572A4 (en) | GROUP III NITRIDE CRYSTAL SUBSTRATE, MANUFACTURING METHOD AND GROUP III NITRIDE SEMICONDUCTOR ELEMENT | |
EP1820777A4 (en) | METHOD FOR PRODUCING A POLYCRYSTALLINE SILICON STAIN | |
EP2100325A4 (en) | WATER-BASED POLISHING PELLET FOR POLISHING A SILICON CARBIDE MONOCRYSTALLINE SUBSTRATE, AND POLISHING METHOD THEREOF | |
EP1931818A4 (en) | PROCESS FOR THE EPITAXIAL GROWTH OF SILICON CARBIDE | |
EP2088626A4 (en) | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH SILICON CARBIDE | |
EP2056340A4 (en) | PROCESS FOR PREPARING A SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE | |
HK1094790A1 (en) | Method for manufacturing diamond single crystal substrate, and diamond single crystal substrate | |
EP1892323A4 (en) | METHOD OF PULLING SILICONE INCLUDING CRYSTALS, SILICON WAFERS AND SOI SUBSTRATE USING SUCH A SILICON WASHER |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20130706 |