TW200606270A - Sputtering target material - Google Patents

Sputtering target material

Info

Publication number
TW200606270A
TW200606270A TW094123117A TW94123117A TW200606270A TW 200606270 A TW200606270 A TW 200606270A TW 094123117 A TW094123117 A TW 094123117A TW 94123117 A TW94123117 A TW 94123117A TW 200606270 A TW200606270 A TW 200606270A
Authority
TW
Taiwan
Prior art keywords
target material
sputtering target
arcing
splashing
sputtering
Prior art date
Application number
TW094123117A
Other languages
English (en)
Inventor
Kazuteru Kato
Takashi Kubota
Hiroshi Kimura
Yoshinori Matsuura
Kenji Matsuzaki
Original Assignee
Mitsui Mining & Smelting Co
Nippon Light Metal Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining & Smelting Co, Nippon Light Metal Co filed Critical Mitsui Mining & Smelting Co
Publication of TW200606270A publication Critical patent/TW200606270A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/12—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
TW094123117A 2004-07-09 2005-07-08 Sputtering target material TW200606270A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004203623 2004-07-09

Publications (1)

Publication Number Publication Date
TW200606270A true TW200606270A (en) 2006-02-16

Family

ID=35783865

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094123117A TW200606270A (en) 2004-07-09 2005-07-08 Sputtering target material

Country Status (6)

Country Link
US (1) US20070102289A1 (zh)
JP (1) JP4549347B2 (zh)
KR (1) KR100778429B1 (zh)
CN (1) CN1878886A (zh)
TW (1) TW200606270A (zh)
WO (1) WO2006006522A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI410393B (zh) * 2010-08-31 2013-10-01 Jx Nippon Mining & Metals Corp Oxide sintered body and oxide semiconductor thin film

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7652223B2 (en) * 2005-06-13 2010-01-26 Applied Materials, Inc. Electron beam welding of sputtering target tiles
JP4562664B2 (ja) * 2006-02-07 2010-10-13 三井金属鉱業株式会社 Ｉｔｏ焼結体およびｉｔｏスパッタリングターゲット
JP5091414B2 (ja) * 2006-03-14 2012-12-05 三井金属鉱業株式会社 Ｉｔｏ焼結体、スパッタリングターゲット材、スパッタリングターゲット、ならびにスパッタリングターゲット材の製造方法
US20100178526A1 (en) * 2006-08-21 2010-07-15 Osaka University Process for working metal members and structures
US20080105542A1 (en) * 2006-11-08 2008-05-08 Purdy Clifford C System and method of manufacturing sputtering targets
US8197894B2 (en) * 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
JP2009008770A (ja) * 2007-06-26 2009-01-15 Kobe Steel Ltd 積層構造およびその製造方法
AU2009268538B2 (en) * 2008-07-09 2011-08-25 Fluor Technologies Corporation High-speed friction stir welding
TWI398529B (zh) * 2011-01-03 2013-06-11 China Steel Corp Method for manufacturing aluminum target with high sputtering rate
US8603571B2 (en) * 2011-05-23 2013-12-10 GM Global Technology Operations LLC Consumable tool friction stir processing of metal surfaces
JP6491859B2 (ja) * 2013-11-25 2019-03-27 株式会社フルヤ金属 スパッタリングターゲットの製造方法及びスパッタリングターゲット
CN106399954A (zh) * 2016-08-30 2017-02-15 有研亿金新材料有限公司 一种长寿命铜锰合金靶材的加工方法
JP6698927B1 (ja) * 2019-08-22 2020-05-27 株式会社フルヤ金属 金属系筒材の製造方法及びそれに用いられる裏当て治具
CN112935520B (zh) * 2021-02-19 2023-05-02 长沙学院 一种提高铝阳极放电性能的加工方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3897391B2 (ja) * 1997-03-25 2007-03-22 昭和電工株式会社 金属製接合部材の摩擦撹拌接合法
JP3818084B2 (ja) * 2000-12-22 2006-09-06 日立電線株式会社 冷却板とその製造方法及びスパッタリングターゲットとその製造方法
JP2003089864A (ja) * 2001-09-18 2003-03-28 Mitsui Mining & Smelting Co Ltd アルミニウム合金薄膜及びその薄膜を有する配線回路並びにその薄膜を形成するターゲット材
JP4422975B2 (ja) * 2003-04-03 2010-03-03 株式会社コベルコ科研 スパッタリングターゲットおよびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI410393B (zh) * 2010-08-31 2013-10-01 Jx Nippon Mining & Metals Corp Oxide sintered body and oxide semiconductor thin film

Also Published As

Publication number Publication date
JPWO2006006522A1 (ja) 2008-04-24
KR100778429B1 (ko) 2007-11-21
US20070102289A1 (en) 2007-05-10
JP4549347B2 (ja) 2010-09-22
CN1878886A (zh) 2006-12-13
WO2006006522A1 (ja) 2006-01-19
KR20060088903A (ko) 2006-08-07

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