TW200605357A - Thin film transistor structure and method of fabricating the same - Google Patents

Thin film transistor structure and method of fabricating the same

Info

Publication number
TW200605357A
TW200605357A TW093132620A TW93132620A TW200605357A TW 200605357 A TW200605357 A TW 200605357A TW 093132620 A TW093132620 A TW 093132620A TW 93132620 A TW93132620 A TW 93132620A TW 200605357 A TW200605357 A TW 200605357A
Authority
TW
Taiwan
Prior art keywords
layer
thin film
film transistor
etch
fabricating
Prior art date
Application number
TW093132620A
Other languages
English (en)
Other versions
TWI345312B (en
Inventor
Dung-You Chen
Original Assignee
Au Optronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=35657756&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW200605357(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Au Optronics Corp filed Critical Au Optronics Corp
Priority to TW093132620A priority Critical patent/TWI345312B/zh
Priority to US11/053,628 priority patent/US7652285B2/en
Publication of TW200605357A publication Critical patent/TW200605357A/zh
Priority to US12/639,436 priority patent/US7960729B2/en
Priority to US13/103,395 priority patent/US8288194B2/en
Application granted granted Critical
Publication of TWI345312B publication Critical patent/TWI345312B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
TW093132620A 2004-07-21 2004-10-27 Thin film transistor structure and method of fabricating the same TWI345312B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW093132620A TWI345312B (en) 2004-07-26 2004-10-27 Thin film transistor structure and method of fabricating the same
US11/053,628 US7652285B2 (en) 2004-07-21 2005-02-08 Thin film transistor structure and method of fabricating the same
US12/639,436 US7960729B2 (en) 2004-07-21 2009-12-16 Thin film transistor structure and method of fabricating the same
US13/103,395 US8288194B2 (en) 2004-07-21 2011-05-09 Method of fabricating thin film transistor structure

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW93121800 2004-07-26
TW093132620A TWI345312B (en) 2004-07-26 2004-10-27 Thin film transistor structure and method of fabricating the same

Publications (2)

Publication Number Publication Date
TW200605357A true TW200605357A (en) 2006-02-01
TWI345312B TWI345312B (en) 2011-07-11

Family

ID=35657756

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093132620A TWI345312B (en) 2004-07-21 2004-10-27 Thin film transistor structure and method of fabricating the same

Country Status (2)

Country Link
US (3) US7652285B2 (zh)
TW (1) TWI345312B (zh)

Families Citing this family (16)

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US7566913B2 (en) * 2005-12-02 2009-07-28 Nitronex Corporation Gallium nitride material devices including conductive regions and methods associated with the same
JP5371341B2 (ja) * 2007-09-21 2013-12-18 株式会社半導体エネルギー研究所 電気泳動方式の表示装置
US7998801B2 (en) * 2008-04-25 2011-08-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor having altered semiconductor layer
JP5096437B2 (ja) * 2009-09-28 2012-12-12 株式会社ジャパンディスプレイイースト 有機ｅｌ表示装置
US8912536B2 (en) * 2010-11-19 2014-12-16 Samsung Electronics Co., Ltd. Transistors, methods of manufacturing the same and electronic devices including transistors
JP5719610B2 (ja) * 2011-01-21 2015-05-20 三菱電機株式会社 薄膜トランジスタ、及びアクティブマトリクス基板
JPWO2016093087A1 (ja) * 2014-12-09 2017-09-07 東京エレクトロン株式会社 パターン形成方法、ガスクラスターイオンビーム照射装置及びパターン形成装置
CN104576318B (zh) * 2014-12-24 2017-09-05 深圳市华星光电技术有限公司 一种非晶硅表面氧化层形成方法
CN105097944A (zh) * 2015-06-25 2015-11-25 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板、显示装置
US10325543B2 (en) 2015-12-15 2019-06-18 a.u. Vista Inc. Multi-mode multi-domain vertical alignment liquid crystal display and method thereof
US10114251B2 (en) 2015-12-17 2018-10-30 A.U. Vista, Inc. Liquid crystal display having holding member and method of fabricating same
US10217707B2 (en) * 2016-09-16 2019-02-26 International Business Machines Corporation Trench contact resistance reduction
US10269834B2 (en) 2017-01-10 2019-04-23 A.U. Vista, Inc. TFT array for use in a high-resolution display panel and method for making same
US10151953B2 (en) 2017-02-22 2018-12-11 A. U. Vista, Inc. In-plane switching display having protrusion electrodes with metal enhanced adhesion
WO2019234890A1 (ja) * 2018-06-07 2019-12-12 堺ディスプレイプロダクト株式会社 薄膜トランジスタおよびその製造方法
CN109461658A (zh) * 2018-10-09 2019-03-12 深圳市华星光电技术有限公司 一种薄膜晶体管的制备方法及薄膜晶体管

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4523372A (en) * 1984-05-07 1985-06-18 Motorola, Inc. Process for fabricating semiconductor device
US5032883A (en) * 1987-09-09 1991-07-16 Casio Computer Co., Ltd. Thin film transistor and method of manufacturing the same
US5198694A (en) * 1990-10-05 1993-03-30 General Electric Company Thin film transistor structure with improved source/drain contacts
US5384271A (en) * 1993-10-04 1995-01-24 General Electric Company Method for reduction of off-current in thin film transistors
JP2900229B2 (ja) * 1994-12-27 1999-06-02 株式会社半導体エネルギー研究所 半導体装置およびその作製方法および電気光学装置
US5835177A (en) * 1995-10-05 1998-11-10 Kabushiki Kaisha Toshiba Array substrate with bus lines takeout/terminal sections having multiple conductive layers
JP3409542B2 (ja) * 1995-11-21 2003-05-26 ソニー株式会社 半導体装置の製造方法
US5811325A (en) * 1996-12-31 1998-09-22 Industrial Technology Research Institute Method of making a polysilicon carbon source/drain heterojunction thin-film transistor
JPH10326748A (ja) 1997-05-26 1998-12-08 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
TW415110B (en) * 1999-08-12 2000-12-11 Hannstar Display Corp Fabrication method of thin-film transistor
US6413846B1 (en) * 2000-11-14 2002-07-02 Advanced Micro Devices, Inc. Contact each methodology and integration scheme
US6465286B2 (en) * 2000-12-20 2002-10-15 General Electric Company Method of fabricating an imager array

Also Published As

Publication number Publication date
TWI345312B (en) 2011-07-11
US8288194B2 (en) 2012-10-16
US7652285B2 (en) 2010-01-26
US20100093137A1 (en) 2010-04-15
US20110212606A1 (en) 2011-09-01
US7960729B2 (en) 2011-06-14
US20060019433A1 (en) 2006-01-26

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