TW200605184A - Coated copper, method for inhibiting the occurrence of whisker, printing wiring board, and semiconductor device - Google Patents

Coated copper, method for inhibiting the occurrence of whisker, printing wiring board, and semiconductor device

Info

Publication number
TW200605184A
TW200605184A TW094120242A TW94120242A TW200605184A TW 200605184 A TW200605184 A TW 200605184A TW 094120242 A TW094120242 A TW 094120242A TW 94120242 A TW94120242 A TW 94120242A TW 200605184 A TW200605184 A TW 200605184A
Authority
TW
Taiwan
Prior art keywords
copper
tin layer
whisker
occurrence
semiconductor device
Prior art date
Application number
TW094120242A
Other languages
English (en)
Inventor
Nobuaki Fujii
Original Assignee
Mitsui Mining & Smelting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining & Smelting Co filed Critical Mitsui Mining & Smelting Co
Publication of TW200605184A publication Critical patent/TW200605184A/zh

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
    • C23C10/28—Solid state diffusion of only metal elements or silicon into metallic material surfaces using solids, e.g. powders, pastes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/52—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32 - C23C18/50
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/07—Electric details
    • H05K2201/0753—Insulation
    • H05K2201/0769—Anti metal-migration, e.g. avoiding tin whisker growth
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1105—Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Manufacturing Of Printed Wiring (AREA)
TW094120242A 2004-07-21 2005-06-17 Coated copper, method for inhibiting the occurrence of whisker, printing wiring board, and semiconductor device TW200605184A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004213308A JP2006032851A (ja) 2004-07-21 2004-07-21 被覆銅、ホイスカの発生抑制方法、プリント配線基板および半導体装置

Publications (1)

Publication Number Publication Date
TW200605184A true TW200605184A (en) 2006-02-01

Family

ID=35785025

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094120242A TW200605184A (en) 2004-07-21 2005-06-17 Coated copper, method for inhibiting the occurrence of whisker, printing wiring board, and semiconductor device

Country Status (6)

Country Link
US (1) US20080316715A1 (zh)
JP (1) JP2006032851A (zh)
KR (1) KR20070037494A (zh)
CN (1) CN1989272A (zh)
TW (1) TW200605184A (zh)
WO (1) WO2006008899A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7931760B2 (en) 2006-03-02 2011-04-26 Fujitsu Limited Whiskerless plated structure and plating method
TWI816769B (zh) * 2018-03-28 2023-10-01 日商大日本印刷股份有限公司 配線基板及製造配線基板之方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201007989Y (zh) * 2007-02-06 2008-01-16 北京京东方光电科技有限公司 左右摆式排线结构
KR100831025B1 (ko) * 2007-07-13 2008-05-20 (주) 세기정밀 반도체 부품 표면의 휘스커 발생 방지 장치
JP2009283574A (ja) * 2008-05-20 2009-12-03 Nitto Denko Corp 配線回路基板およびその製造方法
JP2016023347A (ja) * 2014-07-23 2016-02-08 イビデン株式会社 プリント配線板
WO2018189901A1 (ja) 2017-04-14 2018-10-18 Ykk株式会社 めっき材及びその製造方法
CN110195244B (zh) * 2019-06-05 2021-04-20 博敏电子股份有限公司 一种用于抑制印制电路板电镀锡锡须生长的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3014814B2 (ja) * 1991-07-25 2000-02-28 三井金属鉱業株式会社 スズメッキホイスカーの抑制方法
US5162257A (en) * 1991-09-13 1992-11-10 Mcnc Solder bump fabrication method
US5368814A (en) * 1993-06-16 1994-11-29 International Business Machines, Inc. Lead free, tin-bismuth solder alloys
US5344607A (en) * 1993-06-16 1994-09-06 International Business Machines Corporation Lead-free, high tin, ternary solder alloy of tin, bismuth, and indium
US5411703A (en) * 1993-06-16 1995-05-02 International Business Machines Corporation Lead-free, tin, antimony, bismtuh, copper solder alloy
JPH11135226A (ja) * 1997-10-27 1999-05-21 Harness Syst Tech Res Ltd 嵌合型接続端子の製造方法
KR100319813B1 (ko) * 2000-01-03 2002-01-09 윤종용 유비엠 언더컷을 개선한 솔더 범프의 형성 방법
JP2002289654A (ja) * 2001-03-26 2002-10-04 Hitachi Cable Ltd 半導体装置用テープキャリアおよびその製造方法
JP3682654B2 (ja) * 2002-09-25 2005-08-10 千住金属工業株式会社 無電解Ｎｉメッキ部分へのはんだ付け用はんだ合金
JP4271684B2 (ja) * 2003-10-24 2009-06-03 日鉱金属株式会社 ニッケル合金スパッタリングターゲット及びニッケル合金薄膜
US7391112B2 (en) * 2005-06-01 2008-06-24 Intel Corporation Capping copper bumps

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7931760B2 (en) 2006-03-02 2011-04-26 Fujitsu Limited Whiskerless plated structure and plating method
TWI816769B (zh) * 2018-03-28 2023-10-01 日商大日本印刷股份有限公司 配線基板及製造配線基板之方法

Also Published As

Publication number Publication date
WO2006008899A1 (ja) 2006-01-26
JP2006032851A (ja) 2006-02-02
US20080316715A1 (en) 2008-12-25
CN1989272A (zh) 2007-06-27
KR20070037494A (ko) 2007-04-04

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