TW200604331A - Phosphor and light-emitting diode - Google Patents

Phosphor and light-emitting diode

Info

Publication number
TW200604331A
TW200604331A TW094108959A TW94108959A TW200604331A TW 200604331 A TW200604331 A TW 200604331A TW 094108959 A TW094108959 A TW 094108959A TW 94108959 A TW94108959 A TW 94108959A TW 200604331 A TW200604331 A TW 200604331A
Authority
TW
Taiwan
Prior art keywords
light
emitting diode
phosphor
excited
blue
Prior art date
Application number
TW094108959A
Other languages
English (en)
Chinese (zh)
Other versions
TWI305228B (enExample
Inventor
Hiroyuki Kinoshita
Hiromu Shiomi
Makoto Sasaki
Toshihiko Hayashi
Hiroshi Amano
Satoshi Kamiyama
Motoaki Iwaya
Isamu Akasaki
Original Assignee
Sixon Ltd
Kansai Electric Power Co
Sumitomo Electric Industries
Mitsubishi Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2004087110A external-priority patent/JP4153455B2/ja
Application filed by Sixon Ltd, Kansai Electric Power Co, Sumitomo Electric Industries, Mitsubishi Corp filed Critical Sixon Ltd
Publication of TW200604331A publication Critical patent/TW200604331A/zh
Application granted granted Critical
Publication of TWI305228B publication Critical patent/TWI305228B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/63—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing boron
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/0838—Aluminates; Silicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/0883—Arsenides; Nitrides; Phosphides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/59—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing silicon
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/62—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/65—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing carbon
    • C09K11/655—Aluminates; Silicates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10W72/01515—
    • H10W72/075—
    • H10W72/07554—
    • H10W72/547—
    • H10W72/5522—
    • H10W90/722—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Luminescent Compositions (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
TW094108959A 2004-03-24 2005-03-23 Phosphor and light-emitting diode TW200604331A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004087110A JP4153455B2 (ja) 2003-11-28 2004-03-24 蛍光体および発光ダイオード

Publications (2)

Publication Number Publication Date
TW200604331A true TW200604331A (en) 2006-02-01
TWI305228B TWI305228B (enExample) 2009-01-11

Family

ID=34993682

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094108959A TW200604331A (en) 2004-03-24 2005-03-23 Phosphor and light-emitting diode

Country Status (5)

Country Link
US (1) US20070176531A1 (enExample)
DE (1) DE112005000637T5 (enExample)
GB (1) GB2428681B (enExample)
TW (1) TW200604331A (enExample)
WO (1) WO2005090515A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102400224A (zh) * 2010-07-30 2012-04-04 株式会社电装 碳化硅单晶及其制造方法
CN103320862A (zh) * 2013-06-07 2013-09-25 山东大学 有色碳硅石宝石及其制备方法

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070128068A1 (en) * 2005-11-15 2007-06-07 Hitachi Metals, Ltd. Solder alloy, solder ball, and solder joint using the same
JP2007149791A (ja) * 2005-11-24 2007-06-14 Univ Meijo 半導体発光素子および半導体発光素子の作成方法
WO2007136097A1 (ja) 2006-05-23 2007-11-29 Meijo University 半導体発光素子
US7859000B2 (en) 2008-04-10 2010-12-28 Cree, Inc. LEDs using single crystalline phosphor and methods of fabricating same
US20100218801A1 (en) * 2008-07-08 2010-09-02 Chien-Min Sung Graphene and Hexagonal Boron Nitride Planes and Associated Methods
CN102143908A (zh) * 2008-07-08 2011-08-03 宋健民 石墨烯与六方氮化硼薄片及其相关方法
KR101266205B1 (ko) * 2008-07-08 2013-05-21 우시오덴키 가부시키가이샤 발광 장치 및 발광 장치의 제조 방법
JP2010021202A (ja) * 2008-07-08 2010-01-28 Ushio Inc 発光装置
KR101266226B1 (ko) * 2008-07-09 2013-05-21 우시오덴키 가부시키가이샤 발광 장치 및 발광 장치의 제조 방법
US7888691B2 (en) * 2008-08-29 2011-02-15 Koninklijke Philips Electronics N.V. Light source including a wavelength-converted semiconductor light emitting device and a filter
JP5330880B2 (ja) 2009-03-27 2013-10-30 学校法人 名城大学 発光ダイオード素子及びその製造方法
EP2475015B1 (en) * 2009-08-31 2014-03-12 Kyoto University Ultraviolet light irradiation device
US20110108854A1 (en) * 2009-11-10 2011-05-12 Chien-Min Sung Substantially lattice matched semiconductor materials and associated methods
JP5852300B2 (ja) * 2009-12-02 2016-02-03 オリンパス株式会社 光検出装置、顕微鏡および内視鏡
US20110163298A1 (en) * 2010-01-04 2011-07-07 Chien-Min Sung Graphene and Hexagonal Boron Nitride Devices
EP2571065A4 (en) 2010-12-08 2016-03-23 El Seed Corp GROUP III NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF
JP5219230B1 (ja) * 2012-09-04 2013-06-26 エルシード株式会社 ＳｉＣ蛍光材料及びその製造方法並びに発光素子
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9797064B2 (en) * 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9738991B2 (en) * 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
WO2014203974A1 (ja) * 2013-06-20 2014-12-24 エルシード株式会社 発光装置
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
US9577045B2 (en) 2014-08-04 2017-02-21 Fairchild Semiconductor Corporation Silicon carbide power bipolar devices with deep acceptor doping
JP6730082B2 (ja) * 2016-05-02 2020-07-29 日機装株式会社 深紫外発光素子の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6562706B1 (en) * 2001-12-03 2003-05-13 Industrial Technology Research Institute Structure and manufacturing method of SiC dual metal trench Schottky diode
US20070128068A1 (en) * 2005-11-15 2007-06-07 Hitachi Metals, Ltd. Solder alloy, solder ball, and solder joint using the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102400224A (zh) * 2010-07-30 2012-04-04 株式会社电装 碳化硅单晶及其制造方法
CN102400224B (zh) * 2010-07-30 2015-04-01 株式会社电装 碳化硅单晶及其制造方法
CN103320862A (zh) * 2013-06-07 2013-09-25 山东大学 有色碳硅石宝石及其制备方法
CN103320862B (zh) * 2013-06-07 2016-03-30 山东大学 有色碳硅石宝石及其制备方法

Also Published As

Publication number Publication date
GB2428681A8 (enExample) 2007-07-25
US20070176531A1 (en) 2007-08-02
TWI305228B (enExample) 2009-01-11
GB0620523D0 (en) 2006-11-29
DE112005000637T5 (de) 2008-06-26
WO2005090515A1 (ja) 2005-09-29
GB2428681B (en) 2008-10-29
GB2428681A (en) 2007-02-07

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Legal Events

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