TW200603901A - Method of forming a metal layer - Google Patents

Method of forming a metal layer

Info

Publication number
TW200603901A
TW200603901A TW094110221A TW94110221A TW200603901A TW 200603901 A TW200603901 A TW 200603901A TW 094110221 A TW094110221 A TW 094110221A TW 94110221 A TW94110221 A TW 94110221A TW 200603901 A TW200603901 A TW 200603901A
Authority
TW
Taiwan
Prior art keywords
metal layer
forming
substrate
metal
exposing
Prior art date
Application number
TW094110221A
Other languages
English (en)
Inventor
Tsukasa Matsuda
Taro Ikeda
Fenton R Mcfeely
Sandra G Malhotra
Andrew H Simon
John J Yurkas
Original Assignee
Tokyo Electron Ltd
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Ibm filed Critical Tokyo Electron Ltd
Publication of TW200603901A publication Critical patent/TW200603901A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW094110221A 2004-03-31 2005-03-31 Method of forming a metal layer TW200603901A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/813,680 US20050221000A1 (en) 2004-03-31 2004-03-31 Method of forming a metal layer

Publications (1)

Publication Number Publication Date
TW200603901A true TW200603901A (en) 2006-02-01

Family

ID=34961769

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094110221A TW200603901A (en) 2004-03-31 2005-03-31 Method of forming a metal layer

Country Status (7)

Country Link
US (1) US20050221000A1 (zh)
EP (1) EP1733069A1 (zh)
JP (1) JP2007530797A (zh)
KR (1) KR20070000436A (zh)
CN (1) CN1906325A (zh)
TW (1) TW200603901A (zh)
WO (1) WO2005103323A1 (zh)

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TWI471929B (zh) * 2007-07-11 2015-02-01 Sosul Co Ltd 電漿蝕刻設備與蝕刻晶圓之方法

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US7351285B2 (en) * 2005-03-29 2008-04-01 Tokyo Electron Limited Method and system for forming a variable thickness seed layer
DE102006009822B4 (de) * 2006-03-01 2013-04-18 Schott Ag Verfahren zur Plasmabehandlung von Glasoberflächen, dessen Verwendung sowie Glassubstrat und dessen Verwendung
US7713907B2 (en) * 2006-03-06 2010-05-11 Uchicago Argonne, Llc Method of preparing size-selected metal clusters
US20070224708A1 (en) * 2006-03-21 2007-09-27 Sowmya Krishnan Mass pulse sensor and process-gas system and method
US20080063798A1 (en) * 2006-08-30 2008-03-13 Kher Shreyas S Precursors and hardware for cvd and ald
US8715455B2 (en) * 2007-02-06 2014-05-06 Tokyo Electron Limited Multi-zone gas distribution system for a treatment system
US7829454B2 (en) * 2007-09-11 2010-11-09 Tokyo Electron Limited Method for integrating selective ruthenium deposition into manufacturing of a semiconductior device
US8137467B2 (en) 2007-10-16 2012-03-20 Novellus Systems, Inc. Temperature controlled showerhead
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
KR101016021B1 (ko) * 2008-07-29 2011-02-23 주식회사 테라세미콘 화학기상 증착장치
JP2010067638A (ja) * 2008-09-08 2010-03-25 Tokyo Electron Ltd ルテニウム膜の成膜方法
DE102009023381A1 (de) * 2009-05-29 2010-12-02 Grega, Samuel Verfahren zur Herstellung von W-, Cr-, Mo-Schichten, deren Carbiden, Nitriden, Siliciden, mehrschichtigen Strukturen und Verbindungsstrukturen auf festen Substraten und Vorrichtung für deren Herstellung
EP2256230A1 (de) * 2009-05-29 2010-12-01 Samuel Grega Verfahren zur Herstellung von W-, Cr-, Mo-Schichten, deren Carbiden, Nitriden, Siliciden, mehrschictigen Strukturen und Verbindungsstrukturen auf festen Substraten und Vorrichtung für deren Herstellung
JP2012102404A (ja) * 2009-10-30 2012-05-31 Hitachi Kokusai Electric Inc 半導体装置の製造方法、基板処理方法及び基板処理装置
JP4943536B2 (ja) * 2009-10-30 2012-05-30 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
US9034142B2 (en) 2009-12-18 2015-05-19 Novellus Systems, Inc. Temperature controlled showerhead for high temperature operations
CN102534551B (zh) * 2010-12-17 2014-08-27 北京北方微电子基地设备工艺研究中心有限责任公司 半导体设备
CN102140625B (zh) * 2011-01-05 2013-07-17 景德镇陶瓷学院 一种采用羰基钨为前驱体制备用于聚变堆中面向等离子体钨涂层的方法
SG192967A1 (en) 2011-03-04 2013-09-30 Novellus Systems Inc Hybrid ceramic showerhead
CN102534569A (zh) * 2011-12-23 2012-07-04 嘉兴科民电子设备技术有限公司 一种常压辉光等离子体增强原子层沉积装置
JP2013182961A (ja) * 2012-02-29 2013-09-12 Toshiba Corp 半導体製造装置及び半導体装置の製造方法
JP5859885B2 (ja) * 2012-03-15 2016-02-16 大陽日酸株式会社 金属多層膜の成膜方法および金属多層膜の成膜装置
EP2880963A4 (en) * 2012-08-06 2015-08-12 Goji Ltd METHOD FOR DETECTING DARK DISCHARGE AND DEVICE USING THIS METHOD
CN103337469B (zh) * 2013-06-15 2015-10-28 复旦大学 一种原位沉积阻挡层和籽晶层的系统和方法
KR20150093384A (ko) 2014-02-07 2015-08-18 에스케이하이닉스 주식회사 저저항 텅스텐계 매립게이트구조물을 갖는 트랜지스터 및 그 제조 방법, 그를 구비한 전자장치
US10741365B2 (en) 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
CN104148629B (zh) * 2014-08-15 2017-01-18 江西悦安超细金属有限公司 一种基于羰基金属络合物的3d打印快速成型装置及方法
JP6014807B2 (ja) 2014-11-20 2016-10-26 株式会社プラズマイオンアシスト 燃料電池用セパレータ又は燃料電池用集電部材、及びその製造方法
KR101975134B1 (ko) * 2015-01-19 2019-05-03 엔테그리스, 아이엔씨. 적외선 및 자외선 모니터링을 위한 작은 부피, 긴 경로길이의 다중-통과 기체 셀
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
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CN108147460B (zh) * 2017-12-26 2020-05-05 佛山科学技术学院 一种三氧化钼纳米管的制备方法
CN108128807B (zh) * 2017-12-26 2020-05-05 佛山科学技术学院 一种三氧化钨纳米管的制备方法
FI130416B (en) 2019-06-28 2023-08-21 Beneq Oy Precursor source arrangement and atomic layer growth apparatus
KR102213739B1 (ko) 2020-04-07 2021-02-08 안승근 수도 연결 구조체
US20210381107A1 (en) * 2020-06-03 2021-12-09 Micron Technology, Inc. Material deposition systems, and related methods and microelectronic devices
US11939668B2 (en) * 2022-04-26 2024-03-26 Applied Materials, Inc. Gas delivery for tungsten-containing layer

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JP4031704B2 (ja) * 2002-12-18 2008-01-09 東京エレクトロン株式会社 成膜方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI471929B (zh) * 2007-07-11 2015-02-01 Sosul Co Ltd 電漿蝕刻設備與蝕刻晶圓之方法

Also Published As

Publication number Publication date
JP2007530797A (ja) 2007-11-01
CN1906325A (zh) 2007-01-31
WO2005103323A1 (en) 2005-11-03
KR20070000436A (ko) 2007-01-02
EP1733069A1 (en) 2006-12-20
US20050221000A1 (en) 2005-10-06

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