TW200602441A - Immersion liquid for liquid immersion lithography process, and resist-pattern forming method using immersion liquid - Google Patents
Immersion liquid for liquid immersion lithography process, and resist-pattern forming method using immersion liquidInfo
- Publication number
- TW200602441A TW200602441A TW094117170A TW94117170A TW200602441A TW 200602441 A TW200602441 A TW 200602441A TW 094117170 A TW094117170 A TW 094117170A TW 94117170 A TW94117170 A TW 94117170A TW 200602441 A TW200602441 A TW 200602441A
- Authority
- TW
- Taiwan
- Prior art keywords
- liquid
- immersion
- resist
- lithography process
- liquid immersion
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004155274A JP2005340397A (ja) | 2004-05-25 | 2004-05-25 | 液浸露光プロセス用浸漬液および該浸漬液を用いたレジストパターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200602441A true TW200602441A (en) | 2006-01-16 |
TWI299518B TWI299518B (zh) | 2008-08-01 |
Family
ID=35451133
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094117170A TW200602441A (en) | 2004-05-25 | 2005-05-24 | Immersion liquid for liquid immersion lithography process, and resist-pattern forming method using immersion liquid |
Country Status (4)
Country | Link |
---|---|
US (1) | US20090011375A1 (zh) |
JP (1) | JP2005340397A (zh) |
TW (1) | TW200602441A (zh) |
WO (1) | WO2005117074A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006140429A (ja) * | 2004-10-13 | 2006-06-01 | Asahi Glass Co Ltd | 液浸型露光方法および液浸型露光用媒体 |
JP4616884B2 (ja) * | 2005-04-26 | 2011-01-19 | 三井化学株式会社 | 液浸式露光用液体、液浸式露光用液体の精製方法および液浸式露光方法 |
JP4485994B2 (ja) * | 2005-06-03 | 2010-06-23 | パナソニック株式会社 | パターン形成方法 |
WO2007026573A1 (ja) * | 2005-08-29 | 2007-03-08 | Mitsui Chemicals, Inc. | 液浸式露光用液体および液浸式露光方法 |
US7745102B2 (en) * | 2006-05-26 | 2010-06-29 | Massachusetts Institute Of Technology | Immersion fluids for lithography |
US7586103B2 (en) | 2006-09-09 | 2009-09-08 | E. I. Du Pont De Nemours And Company | High refractive index fluids for immersion lithography |
US7771919B2 (en) | 2006-09-09 | 2010-08-10 | E. I. Du Pont De Nemours And Company | High refractive index fluids for immersion lithography |
US9468251B2 (en) * | 2012-05-30 | 2016-10-18 | Nike, Inc. | Sole assembly including a central support structure for an article of footwear |
JP2020118743A (ja) * | 2019-01-21 | 2020-08-06 | セイコーエプソン株式会社 | 偏光素子の製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2845287B2 (ja) * | 1990-09-28 | 1999-01-13 | オリンパス光学工業株式会社 | 顕微鏡用液浸油 |
JPH07220990A (ja) * | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
EP1225478B1 (en) * | 1998-04-06 | 2012-12-19 | FUJIFILM Corporation | Photosensitive resin composition |
JP4565534B2 (ja) * | 2001-07-19 | 2010-10-20 | 昭和電工株式会社 | 化学増幅型レジスト用難溶化層形成防止材料及び防止方法 |
JP4025683B2 (ja) * | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
US7432042B2 (en) * | 2003-12-03 | 2008-10-07 | United Microelectronics Corp. | Immersion lithography process and mask layer structure applied in the same |
US7125652B2 (en) * | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
-
2004
- 2004-05-25 JP JP2004155274A patent/JP2005340397A/ja not_active Withdrawn
-
2005
- 2005-05-24 TW TW094117170A patent/TW200602441A/zh unknown
- 2005-05-24 WO PCT/JP2005/009477 patent/WO2005117074A1/ja active Application Filing
- 2005-05-24 US US11/597,124 patent/US20090011375A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20090011375A1 (en) | 2009-01-08 |
JP2005340397A (ja) | 2005-12-08 |
WO2005117074A1 (ja) | 2005-12-08 |
TWI299518B (zh) | 2008-08-01 |
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